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    Untitled

    Abstract: No abstract text available
    Text: KM416S1020BT SDRAM ELECTRONICS 512K x 16B itx2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • Dual banks operation. • MRS cycle with address key programs.


    OCR Scan     		PDF KM416S1020BT KM416S1020B/KM416S1021B 50-TSOP2-400F 50-TSOP2-400R D03b2b2

    SDRAM 1996

    Abstract: No abstract text available
    Text: KM416S1021BT SDRAM ELECTRO NICS 512K x 16Bit x 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • Dual banks operation. • MRS cycle with address key programs.


    OCR Scan     		PDF KM416S1021BT 16Bit KM416S1020B/KM416S1021B hig1996 003300fci 50-TSOP2-400F 50-TSOP2-400R D03b2b2 SDRAM 1996

    KM416S1120AT

    Abstract: KM416S1120A KM416S1120AT-G KM416S1120AT-10 KM416S1120AT-12
    Text: KM416S1120AT SDRAM ELECTRONICS 512 K x 16Bit x 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • The KM416S1120A is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG'S high performance


    OCR Scan     		PDF KM416S1120AT 16Bit KM416S1120A b414S 033G3D D03b2b2 KM416S1120AT KM416S1120AT-G KM416S1120AT-10 KM416S1120AT-12