Untitled
Abstract: No abstract text available
Text: KM416S1020BT-G10T 1/2 IL08 C-MOS 16 M (1,048,576 x 16)-BIT SYNCHRONOUS DRAM —TOP VIEW— 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 VDD GND GND GND VDD VDD GND GND VDD VDD NC NC VDD INPUT A0 -A10 A11 : : : CAS CKE : CLK : : CS LDQM, UDQM :
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KM416S1020BT-G10T
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UM62256EM-70LL
Abstract: UM611024 UM62256EM KM416S1020BTG10 AS4C256K16FO-60JC um62256e M27c4000 KM416S1020BT-G10 HM62256 sram ks0723
Text: Cross Reference Your Memory Provider Partnumber Brand µPD4218165 NEC µPD4218165 NEC µPD424260 NEC µPD431000A NEC µPD43256B NEC µPD43256B-B NEC µPD43256BGU-70LL NEC µPD43256BGW-70 NEC µPD441000L-B NEC µPD442000L-B NEC µPD442012L-XB NEC µPD444012L-B
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PD4218165
PD424260
PD431000A
PD43256B
PD43256B-B
PD43256BGU-70LL
PD43256BGW-70
PD441000L-B
PD442000L-B
UM62256EM-70LL
UM611024
UM62256EM
KM416S1020BTG10
AS4C256K16FO-60JC
um62256e
M27c4000
KM416S1020BT-G10
HM62256 sram
ks0723
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Untitled
Abstract: No abstract text available
Text: KM416S1020BT SDRAM ELECTRONICS 512K x 16B itx2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • Dual banks operation. • MRS cycle with address key programs.
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KM416S1020BT
KM416S1020B/KM416S1021B
50-TSOP2-400F
50-TSOP2-400R
D03b2b2
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CI373
Abstract: KMM366S104BTN-G2 kmm366s104
Text: KMM366S104BTN NEW JEDEC SDRAM MODULE KMM366S104BTN SDRAM DIMM 1Mx64 SDRAM DIMM based on 1Mx16, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1Q4BTN is a 1M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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KMM366S104BTN
KMM366S104BTN
1Mx64
1Mx16,
KMM366S1Q4BTN
400mil
168-pin
CI373
KMM366S104BTN-G2
kmm366s104
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KMM466S104BT-F0
Abstract: No abstract text available
Text: KMM466S104BT NEW JEDEC SDRAM MODULE KMM466S104BT SDRAM SODIMM 1 M x64 SDRAM SO DIM M based on 1 M x16, 4K Refresh, 3.3V S ynchronous DR AM s with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S104BT is a 1M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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KMM466S104BT
KMM466S104BT
400mil
144-pin
1Mx16
KMM466S104BT-F0
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KMM366S204BTN-G0
Abstract: KMM366S204BTN-G2 cdq40 KMM366S204BTN
Text: KMM366S204BTN NEW JEDEC SDRAM MODULE KMM366S204BTN SDRAM DIMM 2Mx64 SDRAM DIMM based on 1Mx16, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S204BTN is a 2M bit x 64 Synchronous - Performance range Dynamic RAM high density memory module. The Samsung
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KMM366S204BTN
KMM366S204BTN
2Mx64
1Mx16,
400mil
168-pin
KMM366S204BTN-G8
KMM366S204BTN-G0
KMM366S204BTN-G2
cdq40
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Untitled
Abstract: No abstract text available
Text: KMM466S204BT NEW JEDEC SDRAM MODULE KMM466S204BT SDRAM SODIMM 2Mx64 SDRAM SODIMM based on 1 Mx16, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S204BT is a 2M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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KMM466S204BT
KMM466S204BT
2Mx64
400mil
144-pin
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KM416S1020B
Abstract: QQ372G7
Text: KM416S1020B CMOS SDRAM 512K X 16Bit X 2 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION •• JEDEC standard 3.3V power supply The KM416S1020B is 16,777,216 bits synchronous high data - LVTTL compatible with multiplexed address rate Dynamic RAM organized as 2 x 524,288 words by 16 bits,
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KM416S1020B
16Bit
KM416S1020B
G037213
QQ372G7
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SDRAM 1996
Abstract: No abstract text available
Text: KM416S1021BT SDRAM ELECTRO NICS 512K x 16Bit x 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • Dual banks operation. • MRS cycle with address key programs.
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KM416S1021BT
16Bit
KM416S1020B/KM416S1021B
hig1996
003300fci
50-TSOP2-400F
50-TSOP2-400R
D03b2b2
SDRAM 1996
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