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    KMM366S104 Search Results

    KMM366S104 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KMM366S104CT-GH Samsung Electronics 1M x 64 SDRAM DIMM based on 1M x 16, 4K Refresh, 3.3V Synchronous DRAM with SPD Original PDF
    KMM366S104CT-GL Samsung Electronics 1M x 64 SDRAM DIMM based on 1M x 16, 4K Refresh, 3.3V Synchronous DRAM with SPD Original PDF
    KMM366S104CTL-G0 Samsung Electronics 1M x 64 SDRAM DIMM based on 1M x 16, 4K Refresh, 3.3V Synchronous DRAM with SPD Original PDF

    KMM366S104 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KMM366S104CT-G8

    Abstract: KMM366S104CT-GH KMM366S104CT-GL
    Text: KMM366S104CT Preliminary PC100 SDRAM MODULE Revision History Revision .2 Feb. 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. I IL(Inputs) : ± 5uA to ± 1uA, I IL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at V DD = 3.3V, T A = 23°C, f = 1MHz, V REF =1.4V ± 200 mV.


    Original     		PDF KMM366S104CT PC100 2K/32ms 4K/64ms. KMM366S104CT 1Mx64 1Mx16, 100Max KMM366S104CT-G8 KMM366S104CT-GH KMM366S104CT-GL

    KMM366S104CTL-G0

    Abstract: No abstract text available
    Text: KMM366S104CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) :±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.


    Original     		PDF KMM366S104CTL 200mV. 2K/32ms 4K/64ms. KMM366S104CTL 1Mx64 1Mx16, 66MHz KMM366S104CTL-G0

    KMM366S104CTL-G0

    Abstract: No abstract text available
    Text: KMM366S104CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.


    Original     		PDF KMM366S104CTL 200mV. 2K/32ms 4K/64ms. KMM366S104CTL 1Mx64 1Mx16, 100Max 54Max) KMM366S104CTL-G0

    SBC5307

    Abstract: 80527 PP038 PIN202 fd22-101g SA1115 PFC70 SA11 C21-C38 SA16
    Text: A B C D B_D[16:31] +5 U12 R14 +5 R26 4.7K R15 4.7K BALE 2 ECLK 14 -IOR 19 -IOW 21 4.7K R27 4.7K VCC 6 8 BNCEN MEMR* TX+ TXR X+ RXCD+ CDTPTX+ AVDD1 AVDD2 AVDD3 TPTXTPRX+ T PR X- 43 44 51 76 AGND1 AGND2 AGND3 NC 75 74 73 52 4 +5 CS* T7 5 1 1 1 1 T12 T13 T14


    Original     		PDF AT93C46-10SC-2 -IO16 LT1086CT5 1N5404CT SBC5307 CDC351DW 80527 PP038 PIN202 fd22-101g SA1115 PFC70 SA11 C21-C38 SA16

    SBC5307

    Abstract: resistor array 4.7k 9PIN AM29LV004DT Arnewsh
    Text: SBC5307 USER'S MANUAL REVISION 2.0 Copyright 1998 Arnewsh Inc. Arnewsh Inc. P.O. Box 270352 Fort Collins, CO 80527-0352 Phone: 970 223-1616 Fax: (970) 223-9573 COPYRIGHT Copyright 1998 by Arnewsh Inc. All rights reserved. No part of this manual and the dBUG software provided in Flash ROM’s/EPROM’s


    Original     		PDF SBC5307 LT1086CT5 1N5404CT CDC351DW MCF5307 resistor array 4.7k 9PIN AM29LV004DT Arnewsh

    microtek ups circuit diagram

    Abstract: mac 7a8 transistor 4 BIT ALU dsch program gigabyte 945 motherboard electrical diagram PC MOTHERBOARD GIGABYTE CIRCUIT diagram SCHEMATIC ga 945 pl s3 D28A13 842D01 ati dcm hts nv HMI-200 book national semiconductor
    Text: MC68020 MC68EC020 MICROPROCESSORS USER’S MANUAL First Edition Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Motorola does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights nor the rights of


    Original     		PDF MC68020 MC68EC020 LT1086CT5 1N5404CT SBC5307 CDC351DW MCF5307 microtek ups circuit diagram mac 7a8 transistor 4 BIT ALU dsch program gigabyte 945 motherboard electrical diagram PC MOTHERBOARD GIGABYTE CIRCUIT diagram SCHEMATIC ga 945 pl s3 D28A13 842D01 ati dcm hts nv HMI-200 book national semiconductor

    Untitled

    Abstract: No abstract text available
    Text: KMM366S104CT Preliminary PC100 SDRAM MODULE Revision History Revision .2 Feb. 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. llL(lnputs) : ± 5 u A to ± 1uA, llL(DQ) : ± 5 u A to ± 1.5uA. - Cin to be measured at V DD = 3.3V, T a = 23°C, f = 1MHz, V REF =1.4V ±200 mV.


    OCR Scan     		PDF KMM366S104CT PC100 2K/32ms 4K/64ms. KMM366S104CT 1Mx64 1Mx16,

    Untitled

    Abstract: No abstract text available
    Text: KMM366S104CTL PC66 SDRAM MODULE KMM366S104CTL SDRAM DIMM 1Mx64 SDRAM DIMM based on 1Mx16,4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S104CTL is a 1M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM366S104CTL KMM366S104CTL 1Mx64 1Mx16 400mil 166-pin 168-pin

    CI373

    Abstract: KMM366S104BTN-G2 kmm366s104
    Text: KMM366S104BTN NEW JEDEC SDRAM MODULE KMM366S104BTN SDRAM DIMM 1Mx64 SDRAM DIMM based on 1Mx16, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1Q4BTN is a 1M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM366S104BTN KMM366S104BTN 1Mx64 1Mx16, KMM366S1Q4BTN 400mil 168-pin CI373 KMM366S104BTN-G2 kmm366s104

    Untitled

    Abstract: No abstract text available
    Text: KMM366S104CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp, level are changed as below : - Input leakage currents (Inputs) : +5uA to ±1 uA. - Input leakage currents (I/O) : +5uA to ± 1 .5uA.


    OCR Scan     		PDF KMM366S104CTL 200mV. 2K/32ms 4K/64ms. KMM366S104CTL 1Mx64 1Mx16, 54Max)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary PC100 SDRAM MODULE KMM366S104CT Revision History Revision .2 Feb. 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. In(lnputs) : ± 5uA to ±1uA , - Cin to be measured at V dd I il (DQ) : ± 5uA to ± 1.5uA. = 3.3V, T a = 23°C, f = 1MHz, V


    OCR Scan     		PDF PC100 KMM366S104CT 2K/32ms 4K/64ms. KMM366S104CT 1Mx64 1Mx16,

    Untitled

    Abstract: No abstract text available
    Text: KMM366S104CTL PC66 SDR AM M O D U L E Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp, level are changed as below : -Input leakage currents (Inputs) : ±5uA to ±1 uA. -Input leakage currents (I/O) : ±5uA to ±1.5uA.


    OCR Scan     		PDF KMM366S104CTL 200mV. 2K/32ms 4K/64ms. KMM366S1 04CTL 1Mx64 1Mx16,

    KMM366S424BTL-G0

    Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
    Text: TABLE OF CONTENTS | I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .


    OCR Scan     		PDF KM44S4020CT KM48S2020CT KM416S1020CT KM416S1021CT 1Mx16 KM44S16020BT KM48S8020BT KM416S4020BT ------------------------------------16Mx4 4Mx64 KMM366S424BTL-G0 KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT