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    KM416V254 Search Results

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    KM416V254 Price and Stock

    Samsung Semiconductor KM416V254DT-16

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics KM416V254DT-16 44
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    Samsung Semiconductor KM416V254DT-6

    Dynamic RAM, EDO, 256K x 16, 44 Pin, Plastic, TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM416V254DT-6 420
    • 1 $4.5
    • 10 $4.5
    • 100 $1.95
    • 1000 $1.8
    • 10000 $1.8
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    KM416V254DT-6 224
    • 1 $4.5
    • 10 $4.5
    • 100 $2.775
    • 1000 $2.775
    • 10000 $2.775
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    KM416V254DT-6 37
    • 1 $4.5
    • 10 $3.3
    • 100 $3
    • 1000 $3
    • 10000 $3
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    KM416V254 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM416V254D Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V254DJ-5 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V254DJ-6 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V254DJ-7 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V254DJ-L-5 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V254DJL-5 Samsung Electronics 256K x 16-Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh Original PDF
    KM416V254DJ-L-6 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V254DJL-6 Samsung Electronics 256K x 16-Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh Original PDF
    KM416V254DJL-7 Samsung Electronics 256K x 16-Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh Original PDF
    KM416V254DT-5 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V254DT-6 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V254DT-7 Samsung Electronics 256K x 16-Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period Original PDF
    KM416V254DT-L-5 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V254DTL-5 Samsung Electronics 256K x 16-Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh Original PDF
    KM416V254DT-L-6 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V254DTL-6 Samsung Electronics 256K x 16-Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh Original PDF
    KM416V254DTL-7 Samsung Electronics 256K x 16-Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh Original PDF

    KM416V254 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C254D

    Abstract: KM416C254D KM416V254D km416v254 KM416C254
    Text: KM416C254D, KM416V254D CMOS DRAM 256K x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , Access time (-5,-6 or -7), power consumption(Normal or


    Original     		PDF KM416C254D, KM416V254D 16Bit 256Kx16 higV254D 400mil C254D KM416C254D KM416V254D km416v254 KM416C254

    Untitled

    Abstract: No abstract text available
    Text: KM416V254DT-L6T 1/2 IL08 4 M (256 K x 16)-BIT DRAM WITH EXTENDED DATA OUT —TOP VIEW— VCC 1 40 GND DQ0 I/O 2 39 DQ15 I/O DQ1 I/O 3 38 DQ14 I/O DQ2 I/O 4 37 DQ13 I/O DQ3 I/O 5 36 DQ12 I/O VCC 6 35 GND DQ4 I/O 7 34 DQ11 I/O DQ5 I/O 8 33 DQ10 I/O DQ6 I/O 9


    Original     		PDF KM416V254DT-L6T

    C254D

    Abstract: KM416C254D
    Text: KM416C254D/DL, KM416V254D/DL CMOS DRAM 256K x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , Access time (-5,-6 or -7), power consumption(Normal or


    Original     		PDF KM416C254D/DL, KM416V254D/DL 16Bit 256Kx16 400mil C254D KM416C254D

    am29f010b-70ef

    Abstract: A29010-70F AM29F040B-55JF AM29F040B-90jf Pm25LV512A am29f800bb-70ef S29AL004D55TFI02 AM29F040B-90JI AM29F010B70JF tc55257 cross reference
    Text: Cross Reference Memory IC's and More www.amictechnology.com part number AMIC part number µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B A29F002 AM29F002B AM29F002BB-120JF AM29F002BB-55JD AM29F002BB-90EI


    Original     		PDF PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B PD442012L-XB PD444012L-B A29F002 am29f010b-70ef A29010-70F AM29F040B-55JF AM29F040B-90jf Pm25LV512A am29f800bb-70ef S29AL004D55TFI02 AM29F040B-90JI AM29F010B70JF tc55257 cross reference

    km416c254b

    Abstract: No abstract text available
    Text: CMOS DRAM KM416C254B, KM416V254B 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,


    OCR Scan     		PDF KM416C254B, KM416V254B 256Kx 256Kx16 00E02M3 km416c254b

    rbbb

    Abstract: No abstract text available
    Text: KM416V254DJ ELECTRONICS CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,


    OCR Scan     		PDF KM416V254DJ 256Kx16 DQ0-DQ15 rbbb

    e5as

    Abstract: No abstract text available
    Text: KM416C254D, KM416V254D CMOS DRAM 256K x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or + 3.3V , Access time (-5,-6 or -7), power consumption(Normal or


    OCR Scan     		PDF KM416C254D, KM416V254D 16Bit 256Kx16 e5as

    1dq10

    Abstract: No abstract text available
    Text: KM416C254B, KM416V254B CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,


    OCR Scan     		PDF KM416C254B, KM416V254B 256Kx16 0D23223 1dq10

    Untitled

    Abstract: No abstract text available
    Text: KM416C254D, KM416V254D CMOS DRAM 256K x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , Access time (-5,-6 or -7), power consumption(Normal or


    OCR Scan     		PDF KM416C254D, KM416V254D 16Bit 256Kx16

    RA5E

    Abstract: 100 CJB equivalent D0232
    Text: KM416C254D, KM416V254D CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,


    OCR Scan     		PDF KM416C254D, KM416V254D 256Kx16 RA5E 100 CJB equivalent D0232

    C254D

    Abstract: cmos dram NCC KMQ
    Text: KM416V254DJ ELECTRONICS CMOS D R A M 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,


    OCR Scan     		PDF V254DJ 256Kx16 OT7T2733T KM416V254DJ 003242b C254D cmos dram NCC KMQ

    km416c254

    Abstract: No abstract text available
    Text: MEMORY ICs FUNCTION GUIDE P o w er D ensity' 4M B/W 256KX16 5V±10% KM416C256B# 50/60/70 Fast Page KM416C256BL# J:40 Pin SOJ T:40 Pin TSOP-ll Forward KM416C254S# EDO KM416C254BL# 3.3V±0.3V KM416V256B# 60/70/80 Fast Page KM416V25SBL# KM416V254B# EDO KM416V254BL#


    OCR Scan     		PDF KM416C256B# KM416C256BL# KM416C254S# KM416C254BL# KM416V256B# KM416V25SBL# KM416V254B# KM416V254BL# 256KX16 16Mx1 km416c254

    AD 553 LH

    Abstract: LH 531 G 24
    Text: CMOS DRAM KM416V254B/BL/BLL 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out GENERAL DESCRIPTION FEATURES • Performance range: tR A C tC A C tR C tH P C KM416V254B/BL/BLL-6 60ns 17ns 110ns 24ns KM416V254B/BL/BLL-7 70ns 20ns 130ns 29ns KM416V254B/BL/BLL-8


    OCR Scan     		PDF KM416V254B/BL/BLL 416V254B/BL/BLL KM416V254B/B 40-LEAD AD 553 LH LH 531 G 24

    Untitled

    Abstract: No abstract text available
    Text: KM416V254B/BL/BLL CMOS DRAM 256K x 1 6 Bit CM OS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: tR A C tC A C tR C tH P C KM416V254B/BL/BLL-6 60ns 17ns 110ns 24ns KM416V254B/BL/BLL-7 70ns 20ns 130ns 29ns KM416V254B/BL7BLL-8


    OCR Scan     		PDF KM416V254B/BL/BLL KM416V254B/BL/BLL-6 110ns KM416V254B/BL/BLL-7 130ns KM416V254B/BL7BLL-8 150ns cycle/64m 7TL4142 KM416V254B/B

    C254D

    Abstract: No abstract text available
    Text: KM416V254DT ELECTRONICS CMOS DR AM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,


    OCR Scan     		PDF KM416V254DT 256Kx16 6V254DT b4142 003245b C254D

    Untitled

    Abstract: No abstract text available
    Text: KM416C254B, KM416V254B CMOS DRAM 2 5 6 K x 16 Bit CM OS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,


    OCR Scan     		PDF KM416C254B, KM416V254B 256Kx16 71b4142

    Untitled

    Abstract: No abstract text available
    Text: KM416C254B, KM416V254B CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,


    OCR Scan     		PDF KM416C254B, KM416V254B 256Kx16

    C254D

    Abstract: KM416C
    Text: KM416C254D, KM416V254D CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V .


    OCR Scan     		PDF KM416C254D, KM416V254D 256Kx16 DQODQ15 C254D KM416C

    Untitled

    Abstract: No abstract text available
    Text: KM416C256D, KM416V256D CMOS DRAM 256K x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time (-5,-6,-7), power consumption(Normal or Low power) and


    OCR Scan     		PDF KM416C256D, KM416V256D 16Bit 256Kx16 0G372DS

    4MB DRAM

    Abstract: 4MX16 1MX16
    Text: TABLE OF CONTENTS I. GENERAL INFORMATION 1. Introduction . 11 2. Product Guide . 17 3. Ordering information . .


    OCR Scan     		PDF KM41C4000D/KM41V4000D. KM44C1000D/KM44V1000D. KM44C1003D -KM44C1004D/KM44V1004D. KM44C1005D -KM48C512D/KM48V512D. KM48C512D 4MB DRAM 4MX16 1MX16

    KM44C4000aS 6

    Abstract: KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM 4 M b it 4Mx1 1Mx4 KM41C4000C-6 KM41C4000C-7 " KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7 KM41C4000CL-8 - KM41C4002C-5 KM41C4002C-6 KM41C4002C-7 KM41C4002C-8 - KM41V4000C-6 KM41V4000C-7 KM41V4000C-8 - KM41V4000CL-6


    OCR Scan     		PDF KM41C4000C-5 KM41C4000CL-5 KM41C4002C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000CL-7 KM41C4002C-7 KM41V4000C-7 KM41V4000CL-7 KM41C4000C-8 KM44C4000aS 6 KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL

    Untitled

    Abstract: No abstract text available
    Text: TABLE OF CONTENTS I. PRODUCT GUIDE 1. Introduction. 11 2. Product G u id e . 18 3. DRAM Ordering System. 23


    OCR Scan     		PDF KM41C1000D KM44C256D. KM41C4000C KM41V4000C.

    23C1001

    Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
    Text: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5


    OCR Scan     		PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 44C256CL-8 KM44C256CSL-6 23C1001 KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000

    KM44C4105C-6

    Abstract: KM44C16004
    Text: General Information CMOS DRAM 1. introduction 4Mbit 4Mx1 KM41C4000D-5 - KM41C4000D-6 - KM41C4000D-7 KM41C4000D-L5 1Mx4 KM41C4000D-L6 KM41C4000D-L7 KM41V4000D-6 KM41V4000D-7 KM41V4000D-L6 KM41V4000D-L7 KM44C1000D-5 - KM44C1000D-6 - KM44C1000D-7 KM44C1000D-L5 - KM44C1000D-L6 - KM44C1000D-L7


    OCR Scan     		PDF KM41C4000D-5 KM41C4000D-6 KM41C4000D-7 KM41C4000D-L5 KM41C4000D-L6 KM41V4000D-6 KM41V4000D-L6 KM41C4000D-L7 KM41V4000D-7 KM41V4000D-L7 KM44C4105C-6 KM44C16004