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    B&B Electronics Manufacturing Company 960-8MX-36

    Timing Belt, Single Sided, 36mm BW, 120 Teeth, 960mm Pitch Length | B&B Manufacturing 960-8MX-36
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 960-8MX-36 Bulk 3 Weeks 1
    • 1 $146.77
    • 10 $142.26
    • 100 $142.26
    • 1000 $142.26
    • 10000 $142.26
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    Gates 8MX-36S-12

    Belt Sprocket, Poly Chain GT2 Sprockets,8MM | Gates 8MX-36S-12
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 8MX-36S-12 Bulk 1
    • 1 $122.19
    • 10 $116.08
    • 100 $103.86
    • 1000 $103.86
    • 10000 $103.86
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    B&B Electronics Manufacturing Company 1224-8MX-36

    Timing Belt, 36MM Belt Width, 153 Teeth, 1224MM Pitch Length, Single Sided | B&B Manufacturing 1224-8MX-36
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 1224-8MX-36 Bulk 3 Weeks 1
    • 1 $167.94
    • 10 $167.94
    • 100 $167.94
    • 1000 $167.94
    • 10000 $167.94
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    B&B Electronics Manufacturing Company 1792-8MX-36

    Timing Belt, 36MM Belt Width, 224 Teeth, 1792MM Pitch Length, Single Sided | B&B Manufacturing 1792-8MX-36
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 1792-8MX-36 Bulk 3 Weeks 1
    • 1 $220.98
    • 10 $220.98
    • 100 $220.98
    • 1000 $220.98
    • 10000 $220.98
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    B&B Electronics Manufacturing Company 4400-8MX-36

    Timing Belt, 36MM Belt Width, 550 Teeth, 4400MM Pitch Length, Single Sided | B&B Manufacturing 4400-8MX-36
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 4400-8MX-36 Bulk 3 Weeks 1
    • 1 $597.96
    • 10 $597.96
    • 100 $597.96
    • 1000 $597.96
    • 10000 $597.96
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    Find more 8MX36 price and stock on Findchips.com

    8MX36 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HMD8M36M6

    Abstract: HMD8M36M6G
    Text: HANBit HMD8M36M6G 32Mbyte 8Mx36 72-pin SIMM FP with Parity Mode, 4K Ref. 5V Part No. HMD8M36M6, HMD8M36M6G GENERAL DESCRIPTION The HMD8M36M6 is a 8M x 36bit dynamic RAM high density memory module. The module consists of four CMOS 4M x 16 bit DRAMs in 50-pin TSOP packages and two CMOS 4M x 4bit Quad CAS DRAM in 28pin SOJ package mounted on a


    Original     		PDF HMD8M36M6G 32Mbyte 8Mx36) 72-pin HMD8M36M6, HMD8M36M6 36bit 50-pin 28pin HMD8M36M6G

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5368005CSW/CSWG 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM5368005CSW/CSWG DRAM MODULE


    Original     		PDF KMM5368005CSW/CSWG 8Mx36 4Mx16 KMM5368005CSW/CSWG KMM5368005C 8Mx36bits

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53640805CY0/CT0-C 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53640805CY0/CT0-C DRAM MODULE


    Original     		PDF M53640805CY0/CT0-C 8Mx36 4Mx16 M53640805CY0/CT0-C 8Mx36bits

    HY5117404B

    Abstract: No abstract text available
    Text: HYM536A814B M-Series 8Mx36 bit EDO DRAM MODULE based on 4Mx4 DRAM, with ECC, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536A814B M-Series is a 4Mx36-bit Extended Data Out mode CMOS DRAM module consisting of eighteen HY5117404B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF


    Original     		PDF HYM536A814B 8Mx36 4Mx36-bit HY5117404B HYM536A814BM HYM536A814BMG 72-Pin

    368006EQS4G07TH

    Abstract: No abstract text available
    Text: 8M x 36 Bit 3.3V EDO DIMM Extended Data Out EDO DRAM DIMM 368006EQS4G07TH 100 Pin 8Mx36 EDO DIMM Unbuffered, 4k Refresh, 3.3V Pin Assignment Pin# Pin# 1 Vcc 51 2 DQ0 52 3 DQ1 53 4 DQ2 54 5 DQ3 55 6 Vcc 56 7 DQ4 57 8 DQ5 58 9 DQ6 59 10 DQ7 60 11 CAS0* 61


    Original     		PDF 368006EQS4G07TH 8Mx36 4Mx16 256x8

    Untitled

    Abstract: No abstract text available
    Text: M53620800DW0/DB0 M53620810DW0/DB0 DRAM MODULE M53620800DW0/DB0 & M53620810DW0/DB0 with Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5362080 1 0D is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5362080(1)0D


    Original     		PDF M53620800DW0/DB0 M53620810DW0/DB0 M53620810DW0/DB0 M5362080 8Mx36bits 24-pin 28-pin 72-pin

    KMM5368003BSW

    Abstract: KMM5368003BSWG
    Text: DRAM MODULE KMM5368003BSW/BSWG KMM5368003BSW/BSWG Fast Page Mode 8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5368003B is a 8Mx36bits Dynamic RAM high density memory module. The Samsung KMM5368003B


    Original     		PDF KMM5368003BSW/BSWG KMM5368003BSW/BSWG 4Mx16 KMM5368003B 8Mx36bits KMM5368003B 4Mx16bits 72-pin KMM5368003BSW KMM5368003BSWG

    4Mx4 dram simm

    Abstract: No abstract text available
    Text: M53620800CW0/CB0 M53620810CW0/CB0 DRAM MODULE M53620800CW0/CB0 & M53620810CW0/CB0 with Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5362080 1 0C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5362080(1)0C


    Original     		PDF M53620800CW0/CB0 M53620810CW0/CB0 M53620810CW0/CB0 M5362080 8Mx36bits 24-pin 28-pin 72-pin 4Mx4 dram simm

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53640805BY0/BT0-C 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.1 June 1998 DRAM MODULE M53640805BY0/BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP (access time from col. addr.) in AC CHARACTERISTICS.


    Original     		PDF M53640805BY0/BT0-C 8Mx36 4Mx16 M53640805BY0/BT0-C 8Mx36bits

    Untitled

    Abstract: No abstract text available
    Text: Preliminary M53620800DW0/DB0 M53620810DW0/DB0 DRAM MODULE M53620800DW0/DB0 & M53620810DW0/DB0 with Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5362080 1 0D is a 8Mx36bits Dynamic RAM


    Original     		PDF M53620800DW0/DB0 M53620810DW0/DB0 M53620800DW0/DB0 M53620810DW0/DB0 M5362080 8Mx36bits 24-pin 28-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5368003CSW/CSWG 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM5368003CSW/CSWG DRAM MODULE


    Original     		PDF KMM5368003CSW/CSWG 8Mx36 4Mx16 KMM5368003CSW/CSWG KMM5368003C 8Mx36bits

    HMD8M36M18

    Abstract: HMD8M36M18G
    Text: HANBit HMD8M36M18G 32Mbyte 8Mx36 72-pin FP with Parity MODE 2K Ref. SIMM Design 5V Part No. HMD8M36M18, HMD8M36M18G GENERAL DESCRIPTION The HMD8M36M18G is a 8M x 36bit dynamic RAM high density memory module. The module consists of sixteen CMOS 4M x 4bit DRAM in 24-pin SOJ packages and two CMOS 4Mx 4bit Quad-CAS DRAM in 28pin SOJ packages


    Original     		PDF HMD8M36M18G 32Mbyte 8Mx36) 72-pin HMD8M36M18, HMD8M36M18G 36bit 24-pin 28pin HMD8M36M18

    simm EDO 72pin

    Abstract: HMD8M36M24EG edo dram 72-pin simm 4 m edo dram 50ns 72-pin simm ess u17
    Text: HANBit HMD8M36M24EG 32Mbyte 8Mx36 72-pin EDO with Parity MODE 2K Ref. SIMM Design 5V Part No. HMD8M36M24EG GENERAL DESCRIPTION The HMD8M36M24EG is a 8M x 36bit dynamic RAM high density memory module. The module consists of twenty four CMOS 4M x 4bit DRAM in 24-pin SOJ packages mounted on a 72 -pin, double-sided, FR-4-printed circuit board.


    Original     		PDF HMD8M36M24EG 32Mbyte 8Mx36) 72-pin HMD8M36M24EG 36bit 24-pin HMD8M36M24EG-5 simm EDO 72pin edo dram 72-pin simm 4 m edo dram 50ns 72-pin simm ess u17

    HY5117400B

    Abstract: HY514100A HYM536810D HYM536810DM HYM536810DMG
    Text: HYM536810D M-Series 8Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536810D M-Series is a 8Mx36-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400B in 24/26 pin SOJ and eight HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed


    Original     		PDF HYM536810D 8Mx36 8Mx36-bit HY5117400B HY514100A HYM536810DM HYM536810DMG 72-Pin

    Untitled

    Abstract: No abstract text available
    Text: 8M x 36 Bit 5V EDO SIMM Extended Data Out EDO DRAM SIMM 368006ES52m24JL 72 Pin 8Mx36 EDO SIMM Unbuffered, 1k Refresh, 5V Pin Assignment General Description Pin # Symbol 1 Vss 2 DQ0 3 DQ18 4 DQ1 5 DQ19 6 DQ2 7 DQ20 8 DQ3 9 DQ21 10 Vcc 11 PD5 12 A0 13 A1 14


    Original     		PDF 368006ES52m24JL 8Mx36 72-pin DS156-0e

    Untitled

    Abstract: No abstract text available
    Text: SAM S UN G E L E C T R O N I C S INC b7E D • T T b H l H S 0 0 1 5 3 1 0 13T I SPIGK KMM5368000H/HG DRAM MODULES 8Mx36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5368000H is a 8 M bits x 36 Dynam­ ic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM5368000H/HG 8Mx36 KMM5368000H 24-pin 72-pin 110ns KMM5368000H-7 130ns KMM5368000H-8

    k3525

    Abstract: km41c4100
    Text: DRAM MODULE 32 Mega Byte KMM5368100AK/AKG Fast Page Mode 8Mx36 DRAM SIMM, 2K Refresh, 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM5368100AK is a 8M bit x 36 Dynamic RAM high density memory module. The • Performance Range:


    OCR Scan     		PDF KMM5368100AK/AKG 8Mx36 KMM5368100AK 24-pin 20-pin 72-pin KMM5368100AK-6 k3525 km41c4100

    KM44C4100AK

    Abstract: No abstract text available
    Text: DRAM MODULE 32 Mega Byte KMM5368100AKH Fast Page Mode P rG lim in S T V 8Mx36 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 300 mil Package ^ GENERAL DESCRIPTION FEATURES The Samsung KMM5368100AKH is a 8M bit x 36 Dynamic RAM high density memory module. The


    OCR Scan     		PDF KMM5368100AKH 8Mx36 24-pin 72-pin KM44C4100AK

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5368005BSW/BSWG 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 Sept. 1997 DRAM MODULE KMM5368005BSW/BSWG Revision History Ver si on 0.0 (Sept, 1 99 7) • R em oved tw o A C p aram eters t cacp (access tim e from C A S ) and tAAP (access tim e from col. addr.) in AC C H A R A C T E R I S T I C S .


    OCR Scan     		PDF KMM5368005BSW/BSWG 8Mx36 4Mx16 20MIN)

    Untitled

    Abstract: No abstract text available
    Text: ’«YUHDAt * H Y M 5 3 6 8 1 0 A M - S e r ie s 8Mx36-blt CMOS DRAM MODULE DESCRIPTION The HYM536810A is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or TSOPII and eight HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin


    OCR Scan     		PDF 8Mx36-blt HYM536810A 36-bit HY5117400A HY514100A HYM53681OAM/ASLM/ATM/ASLTM HYM53681OAMG/ALMG/ATMG/ALTMG 1CE13-10-DEC94 HYM536810AM HYM53681

    "30 pin simm"

    Abstract: 30-pin simm memory "16m x 8" KM68512 256K x 8 SRAM dip 30-pin SIMM RAM 30-pin SIMM 30 pin simm
    Text: FUNCTION GUIDE MEMORY ICs 2.2 Dynamic RAM Module Continued Based Component 16M DRAM Base 2.3 Part Number Organization KMM53281OOV/VG/VP KMM5368100G KMM5368000H/HG KMM5368100H/HG KMM5816000T KMM5816100T KMM5916000T KMM5916100T 8Mx32 8M x 36 8Mx36 8M X 36


    OCR Scan     		PDF KMM53281OOV/VG/VP KMM5368100G KMM5368000H/HG KMM5368100H/HG KMM5816000T KMM5816100T KMM5916000T KMM5916100T 8Mx32 8Mx36 "30 pin simm" 30-pin simm memory "16m x 8" KM68512 256K x 8 SRAM dip 30-pin SIMM RAM 30-pin SIMM 30 pin simm

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 32 Mega Byte KMM5368100A1/A1G Fast Page Mode 8Mx36 DRAM SIMM Module, 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM536B100A1 is a 8M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5368100A1 consists of sixteen CMOS


    OCR Scan     		PDF KMM5368100A1/A1G 8Mx36 KMM536B100A1 KMM5368100A1 24-pin 20-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 32 Mega Byte KMM5368103AK/AKG Fast Page Mode 8Mx36 DRAM SIMM, 2K Refresh, 5V Using 16M Quad CAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5368103AK is a 8M bit x 36 Dynamic RAM high density memory module using Parity with 16M Quad CAS DRAM. The Samsung


    OCR Scan     		PDF KMM5368103AK/AKG 8Mx36 KMM5368103AK 24-pm 20-pin 72-pin

    KMM5368105BK

    Abstract: EZ 648
    Text: KMM5368005BK/BKG KMM5368105BK/BKG DRAM MODULE KMM5368005BK/BKG & KMM5368105BK/BKG Fast Page with EDO Mode 8Mx36 DRAM SIMM, 4K & 2K Ref, using 16M Quad CAS EDO DRAM FEATURES G EN ERA L D ESCRIPTIO N The Samsung KM M 53680 1 05BK is a 8M b it x 36 • Part Identification


    OCR Scan     		PDF KMM5368005BK/BKG KMM5368105BK/BKG KMM5368005BK/BKG KMM5368105BK/BKG 8Mx36 24-pin 28-pin 72-pin KMM5368105BK EZ 648