HYM532810BM
Abstract: HY5117400B HYM532810B HYM532810BMG
Text: HYM532810B M-Series 8Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532810B M-Series is a 8Mx32-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling
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HYM532810B
8Mx32
8Mx32-bit
HY5117400B
HYM532810BM
HYM532810BMG
72-Pin
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PDF
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HY5117400B
Abstract: HY514100A
Text: HYM536410B M-Series 4Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536410B M-Series is a 4Mx36-bit Fast Page mode CMOS DRAM module consisting of eight HY5117400B in 24/26 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed
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Original
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HYM536410B
4Mx36
4Mx36-bit
HY5117400B
HY514100A
HYM536410BM
HYM536410BMG
72-Pin
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PDF
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HY5117400B
Abstract: HY514100A HYM536810D HYM536810DM HYM536810DMG
Text: HYM536810D M-Series 8Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536810D M-Series is a 8Mx36-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400B in 24/26 pin SOJ and eight HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed
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Original
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HYM536810D
8Mx36
8Mx36-bit
HY5117400B
HY514100A
HYM536810DM
HYM536810DMG
72-Pin
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PDF
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HYM532410BM
Abstract: HY5117400B HYM532410B HYM532410BMG HYM532410
Text: HYM532410B M-Series 4Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532410B M-Series is a 4Mx32-bit Fast Page mode CMOS DRAM module consisting of eight HY5117400B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling
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Original
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HYM532410B
4Mx32
4Mx32-bit
HY5117400B
HYM532410BM
HYM532410BMG
72-Pin
HYM532410
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PDF
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HY5117400B
Abstract: HY5116400B HY5117400 4Mx4 DRAM
Text: HY5117400B,HY5116400B 4Mx4, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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Original
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HY5117400B
HY5116400B
HY5116400B
HY5117400
4Mx4 DRAM
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PDF
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HY5117400B
Abstract: HY5117400 HYM536810CMG HY514100A HYM536810C HYM536810CM
Text: HYM536810C M-Series 8Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536810C M-Series is a 8Mx36-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400B in 24/26 pin SOJ and eight HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed
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Original
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HYM536810C
8Mx36
8Mx36-bit
HY5117400B
HY514100A
HYM536810CM
HYM536810CMG
72-Pin
HY5117400
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PDF
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mn4117405
Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE
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Original
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CP005-1F
IS89C51
Z16C02
Z86E30
ZZ16C03
Z8036
Z8536
Z8038
Z5380
Z53C80
mn4117405
NN5118165
XL93LC46AP
NN514265
MS6264L-10PC
w24M257
NN514265A
w24m257ak-15
HY62256ALP10
mhs p80c51
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PDF
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PP-T20
Abstract: HY5117400B bel power QBS
Text: HY5117400B Series HYUNDAI 4M X 4-bit CM O S DRAM DESCRIPTION The HY5117400B is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The HY5117400B utilizes Hyundai's C M O S silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY5117400B
HY5117400B
Y5117400B
4b750fl
1AD46-00-MAY9S
GG0457E
HY5117400BJ
HY5117400BSLJ
PP-T20
bel power QBS
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PDF
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HY5116400BT
Abstract: No abstract text available
Text: -HYUNDAI • HY5117400B, HY5116400B 4Mx4, F ait Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mods which is useful for the read operation. The circuit and process design allow this
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OCR Scan
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HY5117400B,
HY5116400B
A0-A11)
HY5116400BT
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PDF
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HY5117400BT
Abstract: HY5117400B
Text: HY5117400B, HY5116400B -HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION ORDERING INFORMATION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed random access of memory cells within the same row.
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OCR Scan
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HY5117400B,
HY5116400B
HY5117400BJ
HY5117400BSLJ
HY5117400BT
HY5117400BSLT
HY5116400BJ
HY5116400BSLJ
HY5116400BT
HY5116400BSLT
HY5117400B
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PDF
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HY5117400B
Abstract: 1AD4
Text: HY5117400B Series “H Y U N D A I 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400B is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. The HY5117400B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY5117400B
12T/BSC
1A048-00-MAY9S
5117400BJ
HY5117400BSLJ
HY5117400BT
1AD4
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PDF
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HY5117400B ,H Y 5116400B 4Mx4, Fast Page mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 4,194,304 x 4 -bit configuration w ith Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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OCR Scan
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HY5117400B
5116400B
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PDF
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1MX16BIT
Abstract: 16MX1
Text: 'H Y U N D A I TABLE OF CONTENTS 1. TABLE OF CONTENTS In d e x . 1 2. PRODUCT QUICK REFERENCE
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OCR Scan
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256Kx4-bit,
1MX16BIT
16MX1
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PDF
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VG264265B
Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D
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256kxl6
256kxl6,
VG264265B
HM514265D
HY514264B
MT4C16270
uPD4244265LE
KM416C254D
TC5144265D
TC5117405CSJ
hyundai
cross reference guide
TC51V16160
Micron 4MX32 EDO SIMM
dram cross reference
cross reference
tc5117800cft
SAMSUNG Cross Reference
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PDF
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HY5116400BT
Abstract: HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ HY531000AJ hy51v65804 HY5117400BJ
Text: • « Y U MD Al DRAM ORDERING INFORMATION 1M bit 1Mx1 HY531000AJ HY531000ALJ 60/70/80 1M bit (256KX4) HY534256AJ HY534256ALJ 45/50/60 2M bit (128KX16) HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC HY512264SLTC
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OCR Scan
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256KX4)
HY531000AJ
HY531000ALJ
HY534256AJ
HY534256ALJ
HY512260JC
HY512260LJC
HY512260SLJC
HY512264JC
HY512264LJC
HY5116400BT
HY5117400CJ
50-PIN
HY5117804BT
TSOP-II 44
26-PIN
HY5118160BJ
hy51v65804
HY5117400BJ
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PDF
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HY514260
Abstract: HY5117404A 164-04A 4m 300mil
Text: I' PRODUCT AVAILABILITY DRAM PRODUCT 1Mbit 2M bit 4Mbit DESCRIPTION PACKAGE OPTION ACCESS TIME ns - As of '96.3Q OPERATI!« CURRENT (mA,MAX) STA»IDBY CURI*ENT (rtiA, MAX) TTL CMOS AVAILABILITY 1M x 1 F a s t Pa ge HY531000A SOJ 60/7 0/80 85/7 5/65 2 1
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OCR Scan
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HY531000A
HY534256A
256KX8
HY512800
HY512264
HY5120
6404A
HY5116404B
HY51V16404A
HY51V16404B
HY514260
HY5117404A
164-04A
4m 300mil
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PDF
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AUO-PL321.60
Abstract: HY51V18164B HY514264 HY514260
Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP
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OCR Scan
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HY531000AS
HY531000ALS
HY531000AJ
HY531000ALJ
HY534256AS
HY534256ALS
HY534256AJ
HY534256ALJ
HY512260JC
HY512260LJC
AUO-PL321.60
HY51V18164B
HY514264
HY514260
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PDF
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HY51V18164
Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
Text: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC
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OCR Scan
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256Kx4)
256x8)
128Kx16)
HY534256AJ
HY534256ALJ
HY512800J
HY512800LJ
HY512800SLJ
HY512264JC
HY512264LJC
HY51V18164
HY5118164
HY514260
HY51V65400
HY51V17804CJ
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PDF
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HY514260
Abstract: HY5118160 HY5116160 HY5117404 HY51V65400 HY511616
Text: •'HYUNDAI — • TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUIC REFERENCE DRAM Part Numbering Ordering Information 3. DRAM DATA SHEETS 1M-bit DRAM Page HY531000A. 1M x1-bit, 5V, F P .
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OCR Scan
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HY531000A.
HY534256A.
256Kx4-bit,
HY512260.
128KX16-bit,
HY514260
HY5118160
HY5116160
HY5117404
HY51V65400
HY511616
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PDF
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