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    720 MOS TRANSISTOR SMD SOT Search Results

    720 MOS TRANSISTOR SMD SOT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    720 MOS TRANSISTOR SMD SOT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    rjp6065

    Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
    Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance


    Original     		PDF

    pin voltage of ic 393 smd

    Abstract: ic 2903 data LM393AFE TRANSISTOR SMD MARKING CODE 360 9336 559 70602 smd code marking 293 smd TRANSISTOR code marking AV TRANSISTOR SMD MARKING CODE 2n2222 marking code 2903 lm393 equivalent VALUE IC
    Text: Philips Semiconductors Product specification Low power dual voltage comparator LM193/A/293/A/393/A/2903 DESCRIPTION PIN CONFIGURATION The LM193 series consists of two independent precision voltage comparators with an offset voltage specification as low as 2.0mV


    Original     		PDF LM193/A/293/A/393/A/2903 LM193 XLM2903CU XLM393CU Un9351 LM193, pin voltage of ic 393 smd ic 2903 data LM393AFE TRANSISTOR SMD MARKING CODE 360 9336 559 70602 smd code marking 293 smd TRANSISTOR code marking AV TRANSISTOR SMD MARKING CODE 2n2222 marking code 2903 lm393 equivalent VALUE IC

    TRANSISTOR SMD MARKING CODE 360

    Abstract: 339 marking code SMD transistor smd marking lm393 pin voltage of ic 393 smd ic 2903 data LM393AFE LM293AN LM339ADT signetics catalog signetics marking
    Text: Philips Semiconductors Product specification Low power dual voltage comparator LM193/A/293/A/393/A/2903 DESCRIPTION PIN CONFIGURATION The LM193 series consists of two independent precision voltage comparators with an offset voltage specification as low as 2.0mV


    Original     		PDF LM193/A/293/A/393/A/2903 LM193 XLM2903CU XLM393CU Un9351 LM193, TRANSISTOR SMD MARKING CODE 360 339 marking code SMD transistor smd marking lm393 pin voltage of ic 393 smd ic 2903 data LM393AFE LM293AN LM339ADT signetics catalog signetics marking

    SPN02N60S5

    Abstract: 02N60S5 VPS05163 02N60
    Text: SPN02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 0.4 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		PDF SPN02N60S5 OT-223 Q67040-S4207 VPS05163 02N60S5 SPN02N60S5 02N60S5 VPS05163 02N60

    03n60s5

    Abstract: SPN03N60S5 Q67040-S4203 VPS05163
    Text: SPN03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 0.7 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		PDF SPN03N60S5 OT-223 Q67040-S4203 VPS05163 03N60S5 03n60s5 SPN03N60S5 Q67040-S4203 VPS05163

    02n60s5

    Abstract: SPN02N60S5 VPS05163 02N6
    Text: SPN02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 0.4 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance 3


    Original     		PDF SPN02N60S5 OT-223 Q67040-S4207 VPS05163 02N60S5 02n60s5 SPN02N60S5 VPS05163 02N6

    max6270

    Abstract: SPN03N60S5
    Text: SPN03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 0.7 A • Extreme dv/dt rated SOT-223 • Ultra low effective capacitances 4 • Improved noise immunity


    Original     		PDF SPN03N60S5 OT-223 VPS05163 Q67040-S4203 03N60S5 max6270 SPN03N60S5

    SPN03N60S5

    Abstract: 03N60S5 VPS05163 SMD TRANSISTOR MARKING 2A SOT223 Q67040-S4203
    Text: SPN03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 0.7 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		PDF SPN03N60S5 OT-223 Q67040-S4203 VPS05163 03N60S5 SPN03N60S5 03N60S5 VPS05163 SMD TRANSISTOR MARKING 2A SOT223 Q67040-S4203

    Q67040-S4203

    Abstract: SPN03N60S5 03N60S5 VPS05163 SMD TRANSISTOR MARKING 2A SOT223
    Text: SPN03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 0.7 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		PDF SPN03N60S5 OT-223 Q67040-S4203 VPS05163 03N60S5 Q67040-S4203 SPN03N60S5 03N60S5 VPS05163 SMD TRANSISTOR MARKING 2A SOT223

    01N60C3

    Abstract: SPN01N60C3 VPS05163 smd diode MARKING 03A
    Text: SPN01N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 6 Ω ID 0.3 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		PDF SPN01N60C3 OT-223 Q67040-S4208 VPS05163 01N60C3 01N60C3 SPN01N60C3 VPS05163 smd diode MARKING 03A

    transistor smd 6.z

    Abstract: SPN03N60S5
    Text: SPN03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 0.7 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		PDF SPN03N60S5 OT-223 VPS05163 Q67040-S4203 03N60S5 transistor smd 6.z SPN03N60S5

    K 3264 fet transistor

    Abstract: K 3264 fet K 3264 transistor BUK7508-55A BUK7608-55A
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which


    Original     		PDF O220AB OT404 BUK7508-55A BUK7608-55A O220AB K 3264 fet transistor K 3264 fet K 3264 transistor BUK7508-55A BUK7608-55A

    02N60S5

    Abstract: SPN02N60S5 VPS05163
    Text: SPN02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 0.4 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance 3


    Original     		PDF SPN02N60S5 OT-223 Q67040-S4207 VPS05163 02N60S5 02N60S5 SPN02N60S5 VPS05163

    TRANSISTOR SMD MARKING CODE 2A

    Abstract: 01N60C3 01n60 SPN01N60C3 VPS05163 smd diode MARKING 03A
    Text: SPN01N60C3 Rev. 2.1 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.3 A • New revolutionary high voltage technology • Ultra low gate charge SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		PDF SPN01N60C3 OT-223 Q67040-S4208 VPS05163 01N60C3 TRANSISTOR SMD MARKING CODE 2A 01N60C3 01n60 SPN01N60C3 VPS05163 smd diode MARKING 03A

    SPN01N60S5

    Abstract: 01N60S5 VPS05163 smd diode MARKING 03A
    Text: SPN01N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 6 Ω ID 0.3 A • Extreme dv/dt rated SOT-223 • Ultra low effective capacitances 4 • Improved noise immunity


    Original     		PDF SPN01N60S5 OT-223 Q67040-S4208 VPS05163 01N60S5 SPN01N60S5 01N60S5 VPS05163 smd diode MARKING 03A

    Untitled

    Abstract: No abstract text available
    Text: SPN01N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.3 A • New revolutionary high voltage technology • Ultra low gate charge SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		PDF SPN01N60C3 VPS05163 OT-223 SPN01N60C3 Q67040-S4208 01N60C3

    01N60

    Abstract: No abstract text available
    Text: SPN01N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 6 Ω ID 0.3 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		PDF SPN01N60C3 OT-223 VPS05163 Q67040-S4208 01N60C3 01N60

    SPN02N60S5

    Abstract: No abstract text available
    Text: SPN02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 0.4 A • Extreme dv/dt rated SOT-223 • Ultra low effective capacitances 4 • Improved noise immunity


    Original     		PDF SPN02N60S5 OT-223 VPS05163 Q67040-S4207 02N60S5 SPN02N60S5

    720 TRANSISTOR smd sot-223

    Abstract: 01N60C SPN01N60C3 01N60C3 VPS05163 01N60 Q67040-S4208
    Text: SPN01N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.3 A • New revolutionary high voltage technology • Ultra low gate charge SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		PDF SPN01N60C3 OT-223 Q67040-S4208 VPS05163 01N60C3 25ngerous 720 TRANSISTOR smd sot-223 01N60C SPN01N60C3 01N60C3 VPS05163 01N60 Q67040-S4208

    SPN04N60S5

    Abstract: transistor smd marking ds sot-223 04n60s5 VPS05163
    Text: SPN04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in SOT 223 VDS 600 V RDS(on) 0.95 Ω ID 0.8 A SOT-223 • Ultra low gate charge • Extreme dv/dt rated 4 • Ultra low effective capacitances


    Original     		PDF SPN04N60S5 OT-223 Q67040-S4211 VPS05163 04N60S5 SPN04N60S5 transistor smd marking ds sot-223 04n60s5 VPS05163

    720 TRANSISTOR smd sot-223

    Abstract: SPN04N60S5
    Text: SPN04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in SOT 223 VDS 600 V RDS(on) 0.95 Ω ID 0.8 A SOT-223 • Ultra low gate charge • Extreme dv/dt rated 4 • Ultra low effective capacitances


    Original     		PDF SPN04N60S5 OT-223 VPS05163 SPN04N60S5 Q67040-S4211 04N60S5 720 TRANSISTOR smd sot-223

    04N60S5

    Abstract: SPN04N60S5 720 TRANSISTOR smd sot-223 VPS05163
    Text: SPN04N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in SOT 223 VDS 600 V RDS(on) 0.95 Ω ID 0.8 A SOT-223 • Ultra low gate charge • Extreme dv/dt rated 4 • Ultra low effective capacitances


    Original     		PDF SPN04N60S5 OT-223 Q67040-S4211 VPS05163 04N60S5 04N60S5 SPN04N60S5 720 TRANSISTOR smd sot-223 VPS05163

    SPN04N60S5

    Abstract: SMD TRANSISTOR MARKING 2c 04N60S5 VPS05163 transistor smd marking ds sot-223 720 TRANSISTOR smd sot-223
    Text: SPN04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in SOT 223 VDS 600 V RDS(on) 0.95 Ω ID 0.8 A SOT-223 • Ultra low gate charge • Extreme dv/dt rated 4 • Ultra low effective capacitances


    Original     		PDF SPN04N60S5 OT-223 Q67040-S4211 VPS05163 04N60S5 SPN04N60S5 SMD TRANSISTOR MARKING 2c 04N60S5 VPS05163 transistor smd marking ds sot-223 720 TRANSISTOR smd sot-223

    04n60c2

    Abstract: Q67040-S4308 SPN04N60C2 VPS05163 720 TRANSISTOR smd sot-223 s4308 UA716 04n60
    Text: SPN04N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in SOT 223 VDS 600 V • Ultra low gate charge RDS(on) 0.95 Ω • Extreme dv/dt rated ID 0.8 A • Ultra low effective capacitances


    Original     		PDF SPN04N60C2 OT-223 Q67040-S4308 VPS05163 04N60C2 04n60c2 Q67040-S4308 SPN04N60C2 VPS05163 720 TRANSISTOR smd sot-223 s4308 UA716 04n60