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    720 TRANSISTOR SMD SOT Search Results

    720 TRANSISTOR SMD SOT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    720 TRANSISTOR SMD SOT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    720 TRANSISTOR smd sot-223

    Abstract: KSP92 KSP92 equivalent 720 TRANSISTOR smd sot 40X40 transistor 720 smd
    Text: Transistors IC SMD Type P-channel enhancement mode vertical D-MOS transistor KSP92 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features Low threshold voltage VGS th Direct interface to C-MOS, TTL,etc. +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2


    Original     		PDF KSP92 OT-223 720 TRANSISTOR smd sot-223 KSP92 KSP92 equivalent 720 TRANSISTOR smd sot 40X40 transistor 720 smd

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification BCW89 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Low voltage max. 60 V . +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA). 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1


    Original     		PDF BCW89 OT-23

    H1 IC

    Abstract: h2 marking smd BCW70 smd TRANSISTOR marking ku smd marking H2 BCW69
    Text: Transistors IC SMD Type PNP General Purpose Transistors BCW69,BCW70 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low voltage max. 45 V . 0.55 Low current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


    Original     		PDF BCW69 BCW70 OT-23 BCW69 H1 IC h2 marking smd BCW70 smd TRANSISTOR marking ku smd marking H2

    BCF30 c8p

    Abstract: BCF29 BCF30 smd marking c8p
    Text: Transistors IC SMD Type PNP General Purpose Transistors BCF29,BCF30 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low voltage max. 32 V . 0.55 Low current (max. 100 mA). +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


    Original     		PDF BCF29 BCF30 OT-23 dis60 BCF29 BCF30 c8p BCF30 smd marking c8p

    transistor 720 smd

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification BCW29,BCW30 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage max. 32 V . +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1


    Original     		PDF BCW29 BCW30 OT-23 BCW29 transistor 720 smd

    transistor 720 smd

    Abstract: FMMT720 TRANSISTOR SMD 1a 9 marking 720 transistor 720 TRANSISTOR smd sot
    Text: Transistors IC SMD Type Switching Transistor FMMT720 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 IC CONT 2.5A. 1 0.55 625mW power dissipation. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 IC up to 10A peak pulse current. +0.05 0.1-0.01


    Original     		PDF FMMT720 OT-23 625mW -50mA -100mA -75mA -10mA, -50mA 100MHz -20mA transistor 720 smd FMMT720 TRANSISTOR SMD 1a 9 marking 720 transistor 720 TRANSISTOR smd sot

    ic 810

    Abstract: IC 810 datasheet MARKING SMD PNP TRANSISTOR BCW89
    Text: Transistors IC SMD Type PNP General Purpose Transistors BCW89 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Low voltage max. 60 V . +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA). 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1


    Original     		PDF BCW89 OT-23 ic 810 IC 810 datasheet MARKING SMD PNP TRANSISTOR BCW89

    smd TRANSISTOR BCW29

    Abstract: MARKING SMD PNP TRANSISTOR BCW29 BCW30 smd transistor marking C2 720 TRANSISTOR smd sot
    Text: Transistors IC SMD Type PNP General Purpose Transistors BCW29,BCW30 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage max. 32 V . +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


    Original     		PDF BCW29 BCW30 OT-23 BCW29 smd TRANSISTOR BCW29 MARKING SMD PNP TRANSISTOR BCW30 smd transistor marking C2 720 TRANSISTOR smd sot

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification BCF29,BCF30 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low voltage max. 32 V . 0.55 Low current (max. 100 mA). +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01


    Original     		PDF BCF29 BCF30 OT-23 BCF29

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification BCW69,BCW70 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low voltage max. 45 V . 0.55 Low current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1


    Original     		PDF BCW69 BCW70 OT-23 dissipati-150 BCW69

    K 3264 fet transistor

    Abstract: K 3264 fet K 3264 transistor BUK7508-55A BUK7608-55A
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which


    Original     		PDF O220AB OT404 BUK7508-55A BUK7608-55A O220AB K 3264 fet transistor K 3264 fet K 3264 transistor BUK7508-55A BUK7608-55A

    SPN02N60S5

    Abstract: 02N60S5 VPS05163 02N60
    Text: SPN02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 0.4 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		PDF SPN02N60S5 OT-223 Q67040-S4207 VPS05163 02N60S5 SPN02N60S5 02N60S5 VPS05163 02N60

    03n60s5

    Abstract: SPN03N60S5 Q67040-S4203 VPS05163
    Text: SPN03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 0.7 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		PDF SPN03N60S5 OT-223 Q67040-S4203 VPS05163 03N60S5 03n60s5 SPN03N60S5 Q67040-S4203 VPS05163

    02n60s5

    Abstract: SPN02N60S5 VPS05163 02N6
    Text: SPN02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 0.4 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance 3


    Original     		PDF SPN02N60S5 OT-223 Q67040-S4207 VPS05163 02N60S5 02n60s5 SPN02N60S5 VPS05163 02N6

    SPN03N60S5

    Abstract: 03N60S5 VPS05163 SMD TRANSISTOR MARKING 2A SOT223 Q67040-S4203
    Text: SPN03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 0.7 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		PDF SPN03N60S5 OT-223 Q67040-S4203 VPS05163 03N60S5 SPN03N60S5 03N60S5 VPS05163 SMD TRANSISTOR MARKING 2A SOT223 Q67040-S4203

    Q67040-S4203

    Abstract: SPN03N60S5 03N60S5 VPS05163 SMD TRANSISTOR MARKING 2A SOT223
    Text: SPN03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 0.7 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		PDF SPN03N60S5 OT-223 Q67040-S4203 VPS05163 03N60S5 Q67040-S4203 SPN03N60S5 03N60S5 VPS05163 SMD TRANSISTOR MARKING 2A SOT223

    01N60C3

    Abstract: SPN01N60C3 VPS05163 smd diode MARKING 03A
    Text: SPN01N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 6 Ω ID 0.3 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		PDF SPN01N60C3 OT-223 Q67040-S4208 VPS05163 01N60C3 01N60C3 SPN01N60C3 VPS05163 smd diode MARKING 03A

    transistor smd 6.z

    Abstract: SPN03N60S5
    Text: SPN03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 0.7 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		PDF SPN03N60S5 OT-223 VPS05163 Q67040-S4203 03N60S5 transistor smd 6.z SPN03N60S5

    02N60S5

    Abstract: SPN02N60S5 VPS05163
    Text: SPN02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 0.4 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance 3


    Original     		PDF SPN02N60S5 OT-223 Q67040-S4207 VPS05163 02N60S5 02N60S5 SPN02N60S5 VPS05163

    TRANSISTOR SMD MARKING CODE 2A

    Abstract: 01N60C3 01n60 SPN01N60C3 VPS05163 smd diode MARKING 03A
    Text: SPN01N60C3 Rev. 2.1 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.3 A • New revolutionary high voltage technology • Ultra low gate charge SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		PDF SPN01N60C3 OT-223 Q67040-S4208 VPS05163 01N60C3 TRANSISTOR SMD MARKING CODE 2A 01N60C3 01n60 SPN01N60C3 VPS05163 smd diode MARKING 03A

    SPN02N60S5

    Abstract: No abstract text available
    Text: SPN02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 0.4 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		PDF SPN02N60S5 OT-223 VPS05163 Q67040-S4207 02N60S5 SPN02N60S5

    SPN01N60S5

    Abstract: 01N60S5 VPS05163 smd diode MARKING 03A
    Text: SPN01N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 6 Ω ID 0.3 A • Extreme dv/dt rated SOT-223 • Ultra low effective capacitances 4 • Improved noise immunity


    Original     		PDF SPN01N60S5 OT-223 Q67040-S4208 VPS05163 01N60S5 SPN01N60S5 01N60S5 VPS05163 smd diode MARKING 03A

    Untitled

    Abstract: No abstract text available
    Text: SPN01N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.3 A • New revolutionary high voltage technology • Ultra low gate charge SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		PDF SPN01N60C3 VPS05163 OT-223 SPN01N60C3 Q67040-S4208 01N60C3

    01N60

    Abstract: No abstract text available
    Text: SPN01N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 6 Ω ID 0.3 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		PDF SPN01N60C3 OT-223 VPS05163 Q67040-S4208 01N60C3 01N60