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    72BL Search Results

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    72BL Price and Stock

    Amphenol Piher JPEPL5272BL

    SHAFT PT15 FIG 1 WHITE
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    DigiKey JPEPL5272BL Bulk 1,958 1
    • 1 $0.44
    • 10 $0.244
    • 100 $0.1443
    • 1000 $0.09005
    • 10000 $0.06735
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    CnC Tech LLC 102-1072-BL-00050

    CBL USB2.0 A PLG-MCR A PLG 1.64'
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 102-1072-BL-00050 Box 382 1
    • 1 $5.64
    • 10 $4.324
    • 100 $3.55
    • 1000 $3.55
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    CnC Tech LLC 102-1072-BL-00200

    CBL USB2.0 A PLG-MCR A PLG 6.56'
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    DigiKey 102-1072-BL-00200 Box 321 1
    • 1 $6.13
    • 10 $4.701
    • 100 $3.9348
    • 1000 $3.896
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    CnC Tech LLC 102-1072-BL-00100

    CBL USB2.0 A PLG-MCR A PLG 3.28'
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    DigiKey 102-1072-BL-00100 Box 177 1
    • 1 $8.84
    • 10 $6.78
    • 100 $5.6752
    • 1000 $4.17955
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    Bristol Electronics 102-1072-BL-00100 6
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    Davies Molding LLC 3072BL

    KNOB 3 ARM THERMOSET POLYESTER
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    DigiKey 3072BL Bulk 100 1
    • 1 $1.36
    • 10 $1.36
    • 100 $0.7954
    • 1000 $0.7954
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    Newark 3072BL Bulk 107 1
    • 1 $0.603
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    RS 3072BL Bulk 100
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    • 100 $1.94
    • 1000 $1.78
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    72BL Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    72BL Unknown 72B, 72BL Series Original PDF

    72BL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    72B230L

    Abstract: 72BL 72B400L 72B75
    Text: z72B, 72BL Series Nominal Nominal impulse impulse discharge discharge current current 8/20 μ s 10/1000μ μs idi idi KA (A) Nominal Alternating discharge current at 50Hz, 1s ida (A) Nominal dc spark-over voltage Gas Discharge Tube dc spark-over voltage


    Original     		PDF 8/20s 10/1000s 72B75/L 72B90/L 72B150/L 72B230/L 72B250/L 72B300/L 72B350/L 72B400/L 72B230L 72BL 72B400L 72B75

    80A230

    Abstract: 80A470 80A75 C80AL y1500 80A350 80A400
    Text: A Series 80 Nominal Nominal Nominal impulse impulse Alternating Insulation Capacitance discharge discharge discharge at 1kHz current current 10/1000 current at resistance 8/20 s μs 50Hz, 1s Nominal dc spark-over voltage Gas Discharge Tube dc spark-over


    Original     		PDF 8/20s 00V/s 80A75 80A90 80A150 80A230 80A250 80A300 80A350 C80ALN 80A230 80A470 80A75 C80AL y1500 80A350 80A400

    B470

    Abstract: b400 1500 B-470 B400 tube 805 Y1100 y1500 72BL B230 B300
    Text: B Sries Nominal dc spark-over voltage Part No. Gas Discharge Impulse spark-over Tube dc DC Holdover voltage spark-over voltage at 1kV/ s voltage Vsdc V Vsdc (V) B75 75 B90 Vsi (V) Vh Nominal impulse discharge current 8/20μs Nominal impulse discharge current


    Original     		PDF 8/20s 10/1000s 00V/s 72BLSF 72BLPF 72BLSF 72BLPF B470 b400 1500 B-470 B400 tube 805 Y1100 y1500 72BL B230 B300

    Untitled

    Abstract: No abstract text available
    Text: IME D INTEGRATED DEVICE • 4Ö2S771 0003^22 1 ■ 16-BIT CMOS ERROR DETECTION AND CORRECTION UNIT MICROSLICE PRODUCT FEATURES: • • ■ T -¥ £ -/7 Pin-compatible to all versions of the 2960 • Military product available compliant to MIL-STD-883, Class B


    OCR Scan     		PDF 2S771 16-BIT MIL-STD-883, 100mA IDT39C60 39C60-1 39C60A 39C60B IDT39C60A: IDT39C60B:

    82441fx

    Abstract: No abstract text available
    Text: PRELIMINARY intel INTEL 440FX PCISET 82441FX PCI AND MEMORY CONTROLLER PMC AND 82442FX DATA BUS ACCELERATOR (DBX) Supports the Pentium Pro Processors at Bus Frequencies Up To 66 Mhz — Supports 32-Bit Addressing — Optimized in-Order and Request Queue


    OCR Scan     		PDF 440FX 82441FX 82442FX 32-Bit 64/72-Bit x-222

    57210

    Abstract: No abstract text available
    Text: •HYUNDAI HYM572103 N-Series 1M X 72-blt CMOS DRAM MODULE DESCRIPTION The HYM572103 is a 1M x 72-bit Fast page m ode CMOS DRAM m odule consisting of sixteen HY514400A in 20/26 pin SOJ o r TSOP-II tw o HY514403B in 24/26 pin SOJ or TSOP-II and two 16-bit BiCMOS line driver in TSSOP on


    OCR Scan     		PDF HYM572103 72-blt 72-bit HY514400A HY514403B 16-bit HYM572103NG/TNG/LMG/LTMG 121mW 209mW 57210

    PJ 52

    Abstract: U1615 U18-18 u1515 U23D-43 U176 U21-18 u1818 L115 U218
    Text: Enhanced Memory Systems Inc. DM1M64DT6/DM1M72DT6 Multibank EOO EDRAM 1Mb x fflM b x 72 Enhanced DRAM DIMM Product Specification Features • l 6Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache ■ Fast 8Mbyte DRAM Array for 30ns Access to Any New Page


    OCR Scan     		PDF DM1M64DT6/DM1M72DT6 DM1M72DT6 72-blt PJ 52 U1615 U18-18 u1515 U23D-43 U176 U21-18 u1818 L115 U218

    Untitled

    Abstract: No abstract text available
    Text: T T ir r \| EDI2AG272129V 2 Megabyte Sync/Sync Burst, Small OlitHne DIMM e l e c t r o n i c DEsiGNa i n c ADVANCED 2x128Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through 2x128K x72 S ynchronous, S ynchronous Burst The EDI2AG272129VxxD1 is a S ynchronous/S ynchro­


    OCR Scan     		PDF EDI2AG272129V 2x128Kx72, 2x128K EDI2AG272129VxxD1 2x128Kx72. 14mmx20mm 2x128Kx72 EDI2AG272129V

    EDI2CG272128V

    Abstract: No abstract text available
    Text: ^EDI EDI2CG272128V 2 Megabyte Sync/Sync Burst, Small Outline DIMM ELECTRONIC DESIGNS, IN C ADVANCED 2x128Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through 2x128K x72 Synchronous, S ynchronous Burst The EDI2CG272128VxxD1 is a S ynchronous/S ynchro­ Flow-Through A rchitecture


    OCR Scan     		PDF ED12CG272128V 2x128Kx72 2x128Kx72, EDI2CG272128V9D1* EDI2CG272128V10D1 EDI2CG272128V12D1 11MMMMMI111MMI1MII EDI2CG272128V

    Hyundai DBS

    Abstract: No abstract text available
    Text: •«HYUNDAI HYM572A414A K-Series Unbuffered 4M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM572A414A is a 4M x 72-bit EDO m ode CMOS DRAM m odule consisting of eighteen HY5117404A in 24/26 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 |iF and 0.01 ^F


    OCR Scan     		PDF HYM572A414A 72-bit HY5117404A HYM572A414AKG/ATKG/ASLKG/ASLTKG DQ0-DQ71) 1EC07-10-JAN98 621HS Hyundai DBS

    ESI 2160

    Abstract: u332 U11B2 cqx 87 u918
    Text: Enhanced Memory Systems Inc. DM512K64DÎ6/DM512K720T6MultibankEDO EDRAM 512Kb x6 4 /5 m x 72 EnhancedDRAM D m Product Specification Features • 8 Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page


    OCR Scan     		PDF DM512K64D 6/DM512K720T6MultibankEDO 512Kb DM512K72DT6-12 72-blt ESI 2160 u332 U11B2 cqx 87 u918

    Untitled

    Abstract: No abstract text available
    Text: m EDI2CG27264V 1 Megabyte Sync/Sync Burst, Small Outline DIMM \ ELECTRONIC DESIGNS. IN C ADVANCED 2x128Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through • 2x128K x72 Synchronous, S ynchronous Burst • Flow-Through A rchitecture • Linear and Sequential Burst Support via MODE pin


    OCR Scan     		PDF EDI2CG27264V 2x128Kx72 2x128Kx72, EDI2CG27264V85D1 2x64Kx72 EDI2CG27264V9D1* EDI2CG27264V10D1 EDI2CG27264V12D1

    LH Research

    Abstract: No abstract text available
    Text: EDI2AG27264V 1 Megabyte Sync/Sync Burst, SfTISlI O utline DIMM ELECTRONIC DESIGNS IN C ADVANCED 2x64Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through 2x64Kx72 Synchronous, S ynchronous Burst The EDI2AG27264VxxD1 is a S ynchronous/S ynchro­ Flow-Through A rchitecture


    OCR Scan     		PDF EDI2AG27264V 2x64Kx72 2x64Kx72, EDI22AG27264V85D1 EDI22AG27264V9D1 EDI22AG27264V10D1 EDI22AG27264V12D1 LH Research

    EDI2AG272129V

    Abstract: ADNA
    Text: EDI2A G272129V 2 Megabyte Sync/Sync Burst, Small Outline DIMM e le c t r o n ic d esig n & in c ADVANCED 2x128Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through 2x128K x72 S ynchronous, S ynchronous Burst The EDI2AG272129VxxD1 is a S ynchronous/S ynchro­


    OCR Scan     		PDF G272129V 2x128Kx72 2x128Kx72, EDI2CG472256V10D1 EDI2CG472256V12D1 EDI2AG272129V ADNA

    Untitled

    Abstract: No abstract text available
    Text: m u EDI2CG272128V 2 Megabyte Sync/Sync Burst, Small Outline DIMM \ ELECTRONIC DESIGNS. IN C ADVANCED 2x128Kx72, 3.3V Module Features • Sync/Sync Burst Flow-Through 2x128K x72 Synchronous, S ynchronous Burst The EDI2CG272128VxxD1 is a S ynchronous/S ynchro­


    OCR Scan     		PDF EDI2CG272128V 2x128Kx72, 2x128K EDI2CG272128VxxD1 14mmx20mm C128V10D1 2x128Kx72 EDI2CG272128V12D1 EDI2CG272128V

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI2AG27265V 1 Megabyte Sync/Sync Burst, ^ m S m a l l Outline DIMM ELECTRONIC DESIGNS, IN C A DVANCED 2x64Kx72, 3.3V Module Features Sync/Sync B urst Flow-Through • 2x64kx72 S ynchronous, S ynchronous Burst • Flow-Through A rchitecture • Sequential B urst MODE


    OCR Scan     		PDF EDI2AG27265V 2x64Kx72, 2x64kx72 2x64Kx72. EDI2AG27265VxxD1 2x64K 7265V

    Untitled

    Abstract: No abstract text available
    Text: brooktree b3E J> m 1L455TS 0007215 SOD corp Interface Specification IS-360.21 T - l P rim ary R ate Fram er Part # UGA-360 M arch, 1993 Brooktree Brooktree Corporation 9950 Barnes Canyon Road San Diego, CA 92121 USA 619-452-7580 619-452-1249 fax 383596 (telex)


    OCR Scan     		PDF 1L455TS IS-360 UGA-360 000730b 5M-1982. UGA-360-v,

    Untitled

    Abstract: No abstract text available
    Text: T T ir r \| K n A I“ 1 1 EDI2AG27264V 1Megabyte Sync/Sync Burst, Small Outline DIMM e le c t r o n ic d esig n & in c ADVANCED 2x64Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through 2x64K x72 S ynchronous, S ynchronous Burst The EDI2AG27264VxxD1 is a S ynchronous/S ynchro­


    OCR Scan     		PDF EDI2AG27264V 2x64Kx72, 2x64K EDI22AG27264V10D1 EDI22AG27264V12D1

    Untitled

    Abstract: No abstract text available
    Text: D R A W IN G MADC IN A M t f i i C A N 1 PR O JE C TIO N v£; 1970 ay amp itvca^FtowATED . a l l rig h ts reserved . amp AND OR PATENTS PENDING. 4 o rÄ P ^ C O B P O B A T E O . APPR O VI [ NP370-OU3 Retz $ 7 0 -0 8 i s ffe V tfi3*' /2-8'7e & f,vA6 A - PL.Vi ¿’¿.I


    OCR Scan     		PDF NP370-OU3 -S242CM 72BLC

    LH Research mm

    Abstract: LH Research
    Text: M D EDI2AG27265V 1 Megabyte Sync/Sync Burst, Small Outline DIMM \ ELECTRONIC DESIGNS, IN C ADVANCED 2x64Kx72, 3.3V I Module Features Sync/Sync Burst Flow-Through ♦ 2x64kx72 S ynchronous, S ynchronous Burst The EDI2AG27265VxxD1 is a S ynchronous/S ynchro­


    OCR Scan     		PDF EDI2AG27265V 2x64kx72 2x64Kx72, T265V85D1 144SO-DIMM EDI2AG27265V9D1 EDI2AG27265V10D1 LH Research mm LH Research

    st178

    Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
    Text: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment


    OCR Scan     		PDF Sylvan58MC 09A001-00 66X0003-001 50746A 68X0003 68X0003-001 T-E0137 93B3-3 93B3-4 st178 diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor

    ICC01

    Abstract: ICC01-400B5 capacitor discharge ignition use ic in capacitor discharge ignition E3 st
    Text: £ = 7 SG S-T H O M SO N ^ 7 # MûfômilSraiMIICl_ ICC01-400B5 Application Specific Discretes A.S.D. IGNITION CONTROL CIRCUIT FEATURES AND BENEFITS • MONOLITHIC CIRCUIT FOR CAPACITANCE DISCHARGE SYSTEM CONTROL. ■ DEDICATED THYRISTOR STRUCTURE FOR


    OCR Scan     		PDF ICC01-400B5 ICC01 GGb72b5 ICC01-400B5 capacitor discharge ignition use ic in capacitor discharge ignition E3 st