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    733 MOSFET Search Results

    733 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    733 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    JANSR2N7524

    Abstract: JANSR2N7524T1 JANSF2N7524T1
    Text: PD-94713C RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597064 JANSR2N7524T1 60V, P-CHANNEL REF: MIL-PRF-19500/733 5 Product Summary TECHNOLOGY ™ Part Number Radiation Level IRHMS597064 100K Rads (Si) IRHMS593064 300K Rads (Si) RDS(on)


    Original     		PDF PD-94713C O-254AA) IRHMS597064 IRHMS593064 JANSR2N7524T1 MIL-PRF-19500/733 JANSF2N7524T1 O-254AA JANSR2N7524 JANSF2N7524T1

    JANSR2N7524

    Abstract: JANSR2N7524T1
    Text: PD-94713C RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597064 JANSR2N7524T1 60V, P-CHANNEL REF: MIL-PRF-19500/733 5 Product Summary TECHNOLOGY ™ Part Number Radiation Level IRHMS597064 100K Rads (Si) IRHMS593064 300K Rads (Si) RDS(on)


    Original     		PDF PD-94713C O-254AA) IRHMS597064 JANSR2N7524T1 MIL-PRF-19500/733 IRHMS597064 IRHMS593064 JANSF2N7524T1 O-254AA JANSR2N7524 JANSR2N7524T1

    QL8X12B-XPL68C

    Abstract: U112 FET intel 80960 MOTHERBOARD pcb CIRCUIT diagram pci arbiter schematics AM26LS32SC PGA zif socket U118 AP-733 QL8x12B-0PL68C vhdl code for watchdog timer of ATM
    Text: A AP-733 APPLICATION NOTE Switched Ethernet Reference Design Description Rod Mullendore SPG 80960 Applications Engineer Intel Corporation Semiconductor Products Group Mail Stop CH6-412 5000 W. Chandler Blvd. Chandler, Arizona 85226 July 23, 1996 Order Number: 272907-001


    Original     		PDF AP-733 CH6-412 warrant84 80960Jx QL8X12B-XPL68C U112 FET intel 80960 MOTHERBOARD pcb CIRCUIT diagram pci arbiter schematics AM26LS32SC PGA zif socket U118 AP-733 QL8x12B-0PL68C vhdl code for watchdog timer of ATM

    HB-1M1608

    Abstract: HB-1M2012-601JT smd diode f4 4d HB-1M2012 N32N A21 SMD diod SMD diod B13 c151 smd diod Compal Electronics foxconn
    Text: A B C D E 1 1 2 2 Hurricane 1.6 N32N LA-733 REV. 4A SCHEMATIC DOCUMENT uPGA2 COPPERMINE with Geyserville 3 3 4 4 Compal Electronics, inc. Title THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS,INC. AND CONTAINS CONFIDENTIAL


    Original     		PDF LA-733 LA-733 HB-1M1608 HB-1M2012-601JT smd diode f4 4d HB-1M2012 N32N A21 SMD diod SMD diod B13 c151 smd diod Compal Electronics foxconn

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE4150 Product Description The PE4150 is an ultra-high linearity Quad MOSFET mixer with an integrated LO amplifier. The LO amplifier allows for LO drive levels of less than 0dBm to produce IIP3 values similar to a Quad MOSFET Array driven with a 15 dBm LO


    Original     		PDF PE4150 PE4150

    IRFP60A

    Abstract: 40A 45V to-220 Schottky IRF7210 ir*c30ud IRFB9N65 2CWQ03FN IR 200V P-Channel fets IRFIB7N50A CONVERTER IRG4IBC10UD 876-1413
    Text: powireview The Technology Update for People in Power New HEXFET MOSFETs for Every Power Supply Application IR Chip Set First to Meet Newest Notebook PC Power Standard New P-Channel HEXFET® Power MOSFETs Offer Best Performance for Low Voltage Circuits New Schottky Diodes


    Original     		PDF O-220 Q101-Compliant IRFP60A 40A 45V to-220 Schottky IRF7210 ir*c30ud IRFB9N65 2CWQ03FN IR 200V P-Channel fets IRFIB7N50A CONVERTER IRG4IBC10UD 876-1413

    3K45

    Abstract: No abstract text available
    Text: SKM 180A020 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions O, P JI Q%+ < * 55 /.&)3K45) 58),4:4)0 Values Units JAA @TA ?@CIB IVA X JA Z VA FFF [ @IA ?@JIB R 1 1 R Q% JIAA R 7¥ P Z 76 @TA 1 7¥U P Z 76U IVA 1 RL6 7L 7LU RW6 O2Y+ ?O5.=B O5 P JI ?TAB Q%


    Original     		PDF 180A020 3K45

    003A

    Abstract: 2SJ472-01L
    Text: Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com _ SPECIFICATION DEVICE NAME : Power M O SFET TYPE NAME 2SJ472-01L.S


    OCR Scan     		PDF 2SJ472-01L 0257-R-004a 2SJ472-01 0257-R-003a 0257-R-003a 003A

    Untitled

    Abstract: No abstract text available
    Text: PACKAGE DIMENSIONS mm TO-3PF 5 . 5 —0 3 Power MOSFET 1. Gate 2. Drain 3. Source Collmer Semiconductor, Inc. • Phone: (972) 733-1700 • FAX: (972) 381-9991 37


    OCR Scan     		PDF

    irf730

    Abstract: IRF N-Channel Power MOSFETs irf730 mosfet IRF731 DIODE IRFP330 IRF732 IRF733
    Text: IRF730/731/732/733 IRFP330/331/332/333 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area


    OCR Scan     		PDF IRF730/731/732/733 IRFP330/331/332/333 O-220 IRF730/IRFP330 IRFP331 IRF732. IRF733/IRFP333 IRFP330/331 IRFP330/3317332/333 irf730 IRF N-Channel Power MOSFETs irf730 mosfet IRF731 DIODE IRFP330 IRF732 IRF733

    IRF730

    Abstract: F7303 IR 733 IR 732 p
    Text: N-CHANNEL POWER MOSFETS IRF730/731/732/733 FEATURES • • • • • • • TO-220 Lower Rds <on> Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability


    OCR Scan     		PDF IRF730/731/732/733 O-220 IRF730 F7303 IR 733 IR 732 p

    GR 733

    Abstract: IR 733
    Text: N-CHANNEL POWER MOSFETS IRFS730/731/732/733 FEATURES TO-220F • Low er Rds ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF IRFS730/731/732/733 O-220F IRFS730 IRFS731 IRFS732 IRFS733 GR 733 IR 733

    IRFS730

    Abstract: 733 mosfet 731 MOSFET IRFS731 IR 733 IRFS732 IRFS733 0D173
    Text: SAMSUNG ELECTRONICS INC b?E D • 7^4142 IRFS730/731/732/733 DDlTBbl 777 «SPIC K N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R ds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance


    OCR Scan     		PDF 7Rb414B IRFS730/731/732/733 to-220f IRFS730/731 /732Z733 IRFS730 IRFS731 IRFS732 IRFS733 733 mosfet 731 MOSFET IR 733 0D173

    F730R

    Abstract: No abstract text available
    Text: • tJ303271 [1054053 ÛT2 g HARRIS ■ HAS IR F730/731/732/733 IR F730R /731R /732R /733R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T O -2 2 0 A B • 4.SA and S.5A, 350V - 400V TOP VIEW • rp s (o n = 1 -0 0 and 1 .5 ÎÏ


    OCR Scan     		PDF tJ303271 F730/731/732/733 F730R /731R /732R /733R IBF730, IRF731, IRF732, IRF733

    733R

    Abstract: F730 55a5e
    Text: 23 HARRIS IR F730/731/732/733 IR F730R/731R/732R /733R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 F e a tu re s • Package T O -2 2 0 A B 4.5A and 5.5A, 350V - 400V T O P VIEW • r D S ° n = 1 -o f l a n d 1 -5 f l • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF F730/731/732/733 F730R/731R/732R /733R IRF730, IRF731, IRF732, IRF733 IRF730R, IRF731R, IRF732R 733R F730 55a5e

    MAX752CPA

    Abstract: ITS470 1N5817 MAX752 MAX752EVKIT-DIP MAXC001
    Text: 19-0036, Rev 0, 6/92 EVALUATION KIT /i/i/ix iy i/i M A X 7 5 2 E v a lu a tio n K it The MAX732/733/752 use current-mode pulse-width modulation PWM controllers to provide precise output regulation and low subharmonic noise Typical no-load supply current is 2mA.


    OCR Scan     		PDF MAX732/733/752 200mA. Voym52) MAX752CPA ITS470 1N5817 MAX752 MAX752EVKIT-DIP MAXC001

    Untitled

    Abstract: No abstract text available
    Text: H a rris 2N7331D, 2N7331R 21^733 1H S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRE9260 D, R, H November 1994 R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Package Features • 19A, -200V, RDS(on) = 0.21Oft TO-258


    OCR Scan     		PDF 2N7331D, 2N7331R FRE9260 O-258 -200V, 21Oft 100KRAD 300KRAD 1000KRAD 3000KRAD

    FN730

    Abstract: ufn731
    Text: POWER MOSFET TRANSISTORS 400 Volt, 1.0 Ohm N-Channel FEATURES • C om pact Plastic Package • Fast Sw itching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Tem perature Stability UFN730 UFN731 UFN732 UFN733 DESCRIPTION


    OCR Scan     		PDF UFN730 UFN731 UFN732 UFN733 UFN730 UFN731 UFN732 FN730

    Untitled

    Abstract: No abstract text available
    Text: Illl Œ5B1 I n t e r n a t i o n a l R e c tifie r International Rectifier .around-the-world manufacturing to serve worldwide needs. El Segundo, California © • Power MOSFETs, Control Integrated Circuits, government/military hi-rel devices, microelectronic relays


    OCR Scan     		PDF

    ksd 250v 10a

    Abstract: B0X34C ksd 202 ksa 3.3 KSC1330 IR 733 sa992 uhf fm 1845 IF 508AF KSA733
    Text: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment Package Application SOT-23 TO-92 FM RM AMP M ix Conv Local O se IF KSC 2223 KSC 2223 KSC 2223 KSC 2715 KSC 1674 KSC 1674 KSC1674/KSC1675 KSC838/KSC1676 AM RF Conv O se KSC1623


    OCR Scan     		PDF OT-23 KSC1623 812/KSC SA812/KSC KSA812/KSC1623 KSC1674/KSC1675 KSC838/KSC1676 KSC945/KSC815 ksd 250v 10a B0X34C ksd 202 ksa 3.3 KSC1330 IR 733 sa992 uhf fm 1845 IF 508AF KSA733

    Untitled

    Abstract: No abstract text available
    Text: AP A d va n ce d P e rfo rm a n c e Series Voss = 4 5 0 V 2078 N Channel Power MOSFET 3449 F e a tu re s • Low ON-state resistance. • Very high-speed switching. • Micaless package facilitating easy mounting. bsolute M axim um R atin g s a t Ta = 25°C


    OCR Scan     		PDF Q0141S5 2SK1446

    SA SOT-23

    Abstract: diode sv 03
    Text: SIPMOS N Channel MOSFET BSS 123 • SIPMOS - enhancement mode • Drain-source voltage Vfci = 100V • Corrtinuous drain current l D = 0.17A • Drain-source on-resistance • Total power dissipation /%* «• = 6.00 PD - 0.36W Type Marking Ordering code for


    OCR Scan     		PDF Q62702-S512 BSS123 SA SOT-23 diode sv 03

    TR40-10

    Abstract: SA SOT-23 MARKING CODE 028a sot 23 Q62702-SS12
    Text: BEE D • û23b32G 0017155 5 « S I P SIPMOS N Channel MOSFET SIEMEN S/ SPCL-, SEMICONDS t * " 3 S *- 2S " BSS123 _ ~_ • SIPMOS - enhancement mode • Draln-source voltage Vf>« = 100V • Continuous drain current I o - 0.17A • Draln-source on-reslstance


    OCR Scan     		PDF 23b32G BSS123 Q62702-SS12 OQ171bO TR40-10 SA SOT-23 MARKING CODE 028a sot 23 Q62702-SS12

    SSR -100 DD

    Abstract: 600V 2A MOSFET N-channel U2N60 B4112 0G40471
    Text: SSR/U2N60A Advanced Power MOSFET FEATURES BVDSS - 6 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA Max. @ VDS = 600V


    OCR Scan     		PDF SSR/U2N60A b4112 0G40471 SSR -100 DD 600V 2A MOSFET N-channel U2N60