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    U2N60 Search Results

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    U2N60 Price and Stock

    Rochester Electronics LLC SSU2N60BTU

    N-CHANNEL POWER MOSFET
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    DigiKey SSU2N60BTU Bulk 1,869 952
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    Alpha & Omega Semiconductor AOU2N60

    MOSFET N-CH 600V 2A TO251-3
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    DigiKey AOU2N60 Tube 4,000
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    TME AOU2N60 3,840 3
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    Alpha & Omega Semiconductor AOU2N60A

    MOSFET N-CH 600V 2A TO251-3
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    DigiKey AOU2N60A Tube
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    onsemi FQU2N60TU

    MOSFET N-CH 600V 2A IPAK
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    DigiKey FQU2N60TU Tube
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    Avnet Americas FQU2N60TU Bulk 4 Weeks 501
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    Rochester Electronics LLC FQU2N60TU

    MOSFET N-CH 600V 2A IPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FQU2N60TU Tube 417
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    U2N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    U2N60

    Abstract: No abstract text available
    Text: WFD/U2N60 Wisdom Semiconductor N-Channel MOSFET Features RDS on (Max 5.0 Ω )@VGS=10V • Gate Charge (Typical 9.5nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) ■ ■ ■ 2. Drain { Symbol


    Original     		PDF WFD/U2N60 30TYP U2N60

    U2N60

    Abstract: 30V 20A power p MOSFET
    Text: SFD/U2N60 SemiWell Semiconductor N-Channel MOSFET Features RDS on (Max 5.0 Ω )@VGS=10V • Gate Charge (Typical 9.5nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) ■ ■ ■ 2. Drain { Symbol


    Original     		PDF SFD/U2N60 30TYP U2N60 30V 20A power p MOSFET

    U2N60

    Abstract: No abstract text available
    Text: SSR/U2N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS on = 5 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.8 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 25 µA (Max.) @ VDS = 600V


    Original     		PDF SSR/U2N60A U2N60

    D2N60

    Abstract: U2N60
    Text: PJD2N60 / U2N60 TO-252 / TO-251 600V N-Channel Enhancement Mode MOSFET FEATURES • 2A, 600V, RDS ON =4.6Ω@VGS=10V, ID=1.0A • • • • • • TO-251 TO-252 Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current


    Original     		PDF PJD2N60 PJU2N60 2002/95/EC O-252 O-251 O-252 O-251 MIL-STD-750 D2N60 U2N60

    SSR -100 DD

    Abstract: 600V 2A MOSFET N-channel U2N60 B4112 0G40471
    Text: SSR/U2N60A Advanced Power MOSFET FEATURES BVDSS - 6 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA Max. @ VDS = 600V


    OCR Scan     		PDF SSR/U2N60A b4112 0G40471 SSR -100 DD 600V 2A MOSFET N-channel U2N60

    U2N60

    Abstract: *c1251c
    Text: SSR/U2N60A Advanced Power MOSFET FEATURES b v dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 m A Max. @ VDS= 600V ■


    OCR Scan     		PDF SSR/U2N60A U2N60 *c1251c

    MOSFET SSR

    Abstract: U2N60
    Text: SSR/U2N60A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 600 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 jaA Max @ Lower R ^o *, : 3.892 Q (Typ.)


    OCR Scan     		PDF SSR/U2N60A --p300nF MOSFET SSR U2N60

    U2N60

    Abstract: No abstract text available
    Text: Advanced SSR/U2N60A Power MOSFET FEATURES BVDSS - 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 1-8 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 600V


    OCR Scan     		PDF SSR/U2N60A \61tage U2N60

    U2N60

    Abstract: No abstract text available
    Text: Advanced SSR/U2N60A P o w e r MOSFET FEATURES BV DSS = 600 V • R ugged G ate O xide T e ch n o lo g y ^ D S o n ■ Lo w e r Input C a pa citance lD ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting ■ Lo w e r Leakage C urrent :25 |a.A (M ax.) @ V DS = 600V


    OCR Scan     		PDF SSR/U2N60A U2N60

    EZ-34

    Abstract: IRFM120A U2N60
    Text: Device List D2 / I 2 IRFW/IZ14A IRFW/IZ24A IRFW/EZ34A IRFW/IZ44A IRFW/I510A ERFW/I520A IRFW/I530A FRFW/I540A IRFWfl550A IRFW/I610A IRFW/I620A IRFW/I630A IRFW/I640A IRFW/I614A IRFW/I624A IRFW/I634A IRFW/I644A IRFW/I710A IRFW/I720A IRFW/I730A IRFW/I740A SSW/I1N50A


    OCR Scan     		PDF IRFW/IZ14A IRFW/IZ24A IRFW/EZ34A IRFW/IZ44A IRFW/I510A ERFW/I520A IRFW/I530A FRFW/I540A IRFWfl550A IRFW/I610A EZ-34 IRFM120A U2N60

    U2N60

    Abstract: SSU2N60 SSU2N55 SSR2N60 250M SSR2N55
    Text: SSR2N60/55 U2N60/55 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • D-PAK Lower R ds ON Improved Inductive Ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF SSR2N60/55 SSU2N60/55 SSR2N60/U2N60 SSR2N55/U2N55 SSR2N60/55 SSR2N60 SSU2N60 SSR2N55 SSU2N55 U2N60 250M