2n7505
Abstract: IRF5Y9540CM
Text: INCH-POUND MIL-PRF-19500/748 3 October 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPE 2N7505T3, JANTX, JANTXV AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense.
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MIL-PRF-19500/748
2N7505T3,
MIL-PRF-19500.
O-257AA
2N7505T3
IRF5Y9540CM
2n7505
IRF5Y9540CM
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RS4-1D1-B
Abstract: RS4-1D1-A ac spst relays spst relays scr snubber
Text: Selector Guide Solid State Relays Series Features RS1 RS2 • Opto Isolated • Upright • Industry Standard Package Contact Arrangement • Compatible with TTL Gates • Push−on Connector Terminals • Mounts on a TO3 Transistor Heat Sink RS3 RS4 • AC and DC Models
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16-Lead
24VDC
12VDC
280VAC
32VDC
10VDC
260VAC
530VAC
100VDC
RS4-1D1-B
RS4-1D1-A
ac spst relays
spst relays
scr snubber
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Untitled
Abstract: No abstract text available
Text: Features • • • Compatible with TTL Gates Push−On Connector Terminals Mounts on a TO3 Transistor Heat Sink RS2 Series Printed Circuit Board Mountable Solid State Relay, 7 Amp. D37 1.500 38.1 1.188 (30.2) .325 (8.3) INPUT .670 (17.0) Max OUTPUT .500
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12VDC
15mADC
2500VAC
500VDC)
240VAC
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uzj845
Abstract: 748 transistor on UZJ313 UZJ3325 chloride ups circuit diagram transistor 335 UZJ3245 UZJ844 UZJ316 UZJ3225
Text: UZJ3 Series U-SHAPED TYPE MICRO-PHOTOSENSORS INDUSTRY’S SMALLEST SIZE ENABLES SPACE SAVING AND QUICK INSTALLATION! Quick Fitting Hook-up Connector Easy to maintain connector type models are available. Its exclusive connector is the industry’s first hook-up connector.
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UZJ31
UZJ33,
UZJ335)
uzj845
748 transistor on
UZJ313
UZJ3325
chloride ups circuit diagram
transistor 335
UZJ3245
UZJ844
UZJ316
UZJ3225
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RS2-1D7-35
Abstract: 5vdc relay 12VDC TTL RS2-1D7-33
Text: Features • • • Compatible with TTL Gates Push−On Connector Terminals Mounts on a TO3 Transistor Heat Sink RS2 Series Printed Circuit Board Mountable Solid State Relay, 7 Amp. D37 1.500 38.1 1.188 (30.2) .325 (8.3) INPUT .670 (17.0) Max OUTPUT .500
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RS2-1D7-33
RS2-1D7-35
12VDC
15mADC
2500VAC
500VDC)
240VAC
RS2-1D7-35
5vdc relay 12VDC TTL
RS2-1D7-33
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UZJ3335
Abstract: UZJ334 UZJ845 UZJ323 UZJ316 UZJ3245 UZJ313 transistor case To 106 UZJ3325 UZJ311
Text: UZJ3 series 0.6.8 16:42 Page 23 UZJ3 Series U-SHAPED TYPE MICRO-PHOTOSENSORS INDUSTRY’S SMALLEST SIZE ENABLES SPACE SAVING AND QUICK INSTALLATION! Quick Fitting Hook-up Connector Easy to maintain connector type models are available. Its exclusive connector is the industry’s first
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UZJ33,
UZJ335)
UZJ3335
UZJ334
UZJ845
UZJ323
UZJ316
UZJ3245
UZJ313
transistor case To 106
UZJ3325
UZJ311
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UZZ8031
Abstract: 748 DIODE UZA801 UZA802 UZN11 UZN115 UZZ8032 UZZ8131 UZZ8132 acceleration sensor matsushita
Text: UZN10.fm 1 y [ W Q O O O N U P O œ @ y j œ @ O P P X “ UZN10 Series WATER DETECTION SENSORS DETECTS WATER.RELIABLY! Strong beam Power As the beam power is strong, its beam can pass through not only translucent containers PFA tanks, etc. but also opaque containers of shampoo bottles,
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UZN10
UZN10
SUS304)
472inch)
AACT1B11E
200003-3YT
UZZ8031
748 DIODE
UZA801
UZA802
UZN11
UZN115
UZZ8032
UZZ8131
UZZ8132
acceleration sensor matsushita
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748 transistor on
Abstract: "by 236" diode UZQ300 UZQ831 UZQ301 UZQ302 UZQ303 UZQ304 UZQ305 UZQ306
Text: UZQ3 series 232-242 0.6.10 14:44 Page 1 UZQ30 Series SQUARE-SHAPED MINIATURE PROXIMITY SENSORS HIGH PERFORMANCE IN SURPRISINGLY SMALL BODY WITH COST EFFECTIVENESS The Smallest Size Close Mounting Mountable in a tight space as the sensor is just 6ן6ן19mm
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UZQ30
6619mm
748inch
UZQ304
UZQ306
UZQ30
UZQ831
787inch
2-M30
748 transistor on
"by 236" diode
UZQ300
UZQ831
UZQ301
UZQ302
UZQ303
UZQ304
UZQ305
UZQ306
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Untitled
Abstract: No abstract text available
Text: Document Number: AFT27S010N Rev. 0, 11/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.
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AFT27S010N
AFT27S010NT1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT27S010N Rev. 1, 9/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz.
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AFT27S010N
AFT27S010NT1
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zener n7
Abstract: UZD62 W10H DC-12 DC-13 EN50081-2 UZD60 UZD61 UZD621 UZD861
Text: UZD6 series 0.6.8 15:52 Page 5 FIXED-FOCUS REFLECTIVE TYPE PHOTOELECTRIC SENSORS UZD6 Series PRECISE OBJECT DETECTION IN LIMITED AREA Stable Sensing by Fixed-focus No matter to install in a limited space. 100 3.937 50 1.969 30 1.181 Central sensing distance
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181inch
UZD621
394inch
709inch
2-M30
UZD862
SUS304
M316mm
zener n7
UZD62
W10H
DC-12
DC-13
EN50081-2
UZD60
UZD61
UZD861
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transistor zc
Abstract: transistor zx series transistor C3 C3EX
Text: Cell-Based IC Crystal Oscillators Introduction Crystal Theory This Engineering Application Note EAN describes the use of the Crystal Oscillator parts in the ATMEL Libraries. The mechanical impedance of a crystal for one particular series resonant frequency k (the fundamental and its overtones) can be electrically modeled by a
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SC-23,
transistor zc
transistor zx series
transistor C3
C3EX
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UZG121
Abstract: UZG120 UZG1205 UZG130 UZG140 UZH130 UZH200 UZH301 UZH302 UZH462
Text: UZG series 0.6.7 15:56 Page 1 AMPLIFIER-SEPARATED PHOTOELECTRIC SENSORS UZG/H Series SMALL PACKAGE POWER & FLEXIBILITY Just Press the Buttons Anyone can achieve the optimum sensitivity setting with the press of a button. ᕃ Press “ON” button on the mark.
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394inch
M312mm
472inch
UZH821
UZH812
M314mm
551inch
UZG121
UZG120
UZG1205
UZG130
UZG140
UZH130
UZH200
UZH301
UZH302
UZH462
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MOSFET J132
Abstract: J132 MOSFET J127 mosfet J1955 ATC100B101 MRF8S7170N 748 transistor on AN1955 JESD22-A113 JESD22-A114
Text: Document Number: MRF8S7170N Rev. 0, 2/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7170NR3 Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station
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MRF8S7170N
MRF8S7170NR3
MOSFET J132
J132 MOSFET
J127 mosfet
J1955
ATC100B101
MRF8S7170N
748 transistor on
AN1955
JESD22-A113
JESD22-A114
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MOSFET J132
Abstract: J132 MOSFET J127 mosfet MRF8S7170N AN1955 MRF8S7170NR3
Text: Freescale Semiconductor Technical Data Document Number: MRF8S7170N Rev. 1, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7170NR3 Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station
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MRF8S7170N
MRF8S7170NR3
MOSFET J132
J132 MOSFET
J127 mosfet
MRF8S7170N
AN1955
MRF8S7170NR3
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transistor J128
Abstract: j128 MRF8S7120N mpz2012s300AT CRCW12061K00FKEA 748 transistor on AN1955 MPZ2012S300AT000 ATC100B1R0BT500XT MRF8S7120NR3
Text: Freescale Semiconductor Technical Data Document Number: MRF8S7120N Rev. 0, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7120NR3 Designed for CDMA base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base
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MRF8S7120N
MRF8S7120NR3
transistor J128
j128
MRF8S7120N
mpz2012s300AT
CRCW12061K00FKEA
748 transistor on
AN1955
MPZ2012S300AT000
ATC100B1R0BT500XT
MRF8S7120NR3
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PDF
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8S7170N Rev. 1, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7170NR3 Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station
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MRF8S7170N
MRF8S7170NR3
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5007
Abstract: COMMUNICATIONS TRANSISTOR CORP EC-0006 EC-5007
Text: EC-5007 PRELIMINARY DATA LNA / DOWNCONVERTER 500–3000 MHz Features n n n n n n n n Single 3.0 to 5.0 Vdc Operation Separate LNA and Active Downconverter functions Balanced IF Output to 200 MHz Power-down Capability Low Power Consumption Low LO Power Use EC-0006 for LO drive
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EC-5007
EC-0006
EC-5007
SS-000079-000
5007
COMMUNICATIONS TRANSISTOR CORP
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ic smd 851
Abstract: KPA1890 transistor P 24 smd
Text: IC IC SMD Type MOS Field Effect Transistor KPA1890 TSSOP-8 Features Unit: mm Can be driven by a 4.0-V power source Low on-state resistance N-channel RDS on 1 = 27 m MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 37 m MAX. (VGS = 4.5 V, ID = 3.0 A) RDS(on)3 = 47 m
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KPA1890
ic smd 851
KPA1890
transistor P 24 smd
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transistors BC 543
Abstract: TRANSISTOR BC 748 transistor BC 543
Text: SIEMENS BC 857S PNP Silicon A F Transistor Array • For AF input stages and driver applications >High current gain >Low collector-emitter saturation voltage •Two galvanic internal isolated Transistors in one package 3Cs lil Lit L±J Pin Configuration
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OCR Scan
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Q62702-2373
OT-363
fiS35bD5
235LD5
BC857S
0535bD5
012Dbl3
transistors BC 543
TRANSISTOR BC 748
transistor BC 543
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PHN110
Abstract: MS-012AA
Text: Philips Semiconductors Product specification N-channel enhancement mode MOS transistor PHN110 FEATURES DESCRIPTION • High-speed switching N-channel enhancement mode MOS transistor in an 8-pin plastic SOT96-1 S08 package. • No secondary breakdown • Very low on-resistance.
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OCR Scan
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PHN110
OT96-1
OT96-1
076E03S
MS-012AA
1997Jun
PHN110
MS-012AA
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PDF
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MARKING CODE Zi sot363
Abstract: WRS SOT363 Marking Code ZI ZI Marking Code transistor sot-363 marking ZI 198S Transistor WRS
Text: SIEMENS BCR 198S PNP Silicon Digital Transistor Array >Switching circuit, inverter, interface circuit, driver circuit •Two galvanic internal isolated Transistors in one package ■Built in bias resistor (R1=47k£i, R2=47kQ) Type Marking Ordering Code Pin Configuration
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OCR Scan
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Q62702-C2419
OT-363
27llector-base
MARKING CODE Zi sot363
WRS SOT363
Marking Code ZI
ZI Marking Code transistor
sot-363 marking ZI
198S
Transistor WRS
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GP1A71A1
Abstract: GP1A71A GP1A71 DF3-3S-2R26 DF3-3S-2R28 D2350
Text: SHARP GP1A71A/GP1A71A1 • 1. 2. 3. Features Compact type Snap-in mounting type Can be mounted on 3 different thickness boards 1.0mm, 1.2mm, 1.6mm 4. 3-pin connector terminal ■ 1. 2. 3. GP1A71A/GP1A71A1 Com pact S ize O PIC Photointerrupter w ith C onnector
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GP1A71A/GP1A71A1
GP1A71A
GP1A71A1
GP1A71A
GP1A71A1
GP1A71
DF3-3S-2R26
DF3-3S-2R28
D2350
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PDF
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GP1A71A1
Abstract: No abstract text available
Text: SHARP GP1A71A/GP1A71A1 • Features 1. Com pact type 2. Snap-in m ounting type 3. Can be m ounted on 3 different thickness boards 1.0mm, 1.2mm, 1.6mm 4. 3-pin connector term inal GP1A71A/GP1A71A1 Photofciterrupter with Connector ■ OuUne Dim ensions G P1A71A
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GP1A71A/GP1A71A1
P1A71A
GP1A71A1
P1A71A
GP1A71A1
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