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    Catalog Datasheet MFG & Type Document Tags PDF

    IN74LV640

    Abstract: IN74LV640D IN74LV640N 74LV640
    Text: TECHNICAL DATA 74LV640 Octal 3-State Inverting Bus Transceiver The 74LV640 is a low-voltage Si-gate CMOS device and is pin and function compatible with 74HC/HCT640. The 74LV640 provides six inverting buffers with Schmitt-trigger action. • • • • Wide Operating Voltage: 1.2 to 3.6 V


    Original     		IN74LV640 74LV640 74HC/HCT640. IN74LV640N IN74LV640D IZ74LV640 IN74LV640 PDF

    KK74LV640

    Abstract: KK74LV640D KK74LV640N
    Text: TECHNICAL DATA 74LV640 Octal 3-State Inverting Bus Transceiver The 74LV640 is a low-voltage Si-gate CMOS device and is pin and function compatible with 74HC/HCT640. The 74LV640 provides six inverting buffers with Schmitt-trigger action. • • • • Wide Operating Voltage: 1.2 to 3.6 V


    Original     		KK74LV640 74LV640 74HC/HCT640. KK74LV640N KK74LV640D 013AC) KK74LV640 PDF

    IN74LV640

    Abstract: IN74LV640D IN74LV640N
    Text: TECHNICAL DATA 74LV640 Octal 3-State Inverting Bus Transceiver The 74LV640 is a low-voltage Si-gate CMOS device and is pin and function compatible with 74HC/HCT640. The 74LV640 provides six inverting buffers with Schmitt-trigger action. • • • • Wide Operating Voltage: 1.2 to 3.6 V


    Original     		IN74LV640 74LV640 74HC/HCT640. IN74LV640N IN74LV640D 013AC) IN74LV640 PDF

    IN74LV640

    Abstract: IN74LV640D IN74LV640N
    Text: TECHNICAL DATA 74LV640 Octal 3-State Inverting Bus Transceiver The 74LV640 is a low-voltage Si-gate CMOS device and is pin and function compatible with 74HC/HCT640. The 74LV640 provides six inverting buffers with Schmitt-trigger action. • • • • Wide Operating Voltage: 1.2 to 3.6 V


    Original     		IN74LV640 74LV640 74HC/HCT640. IN74LV640N IN74LV640D IZ74LV640 IN74LV640 PDF

    IL311ANM

    Abstract: tda8362b ILa1519B1Q iff4n60 IN1307N tda8890 IL311AN IL91214AN MC74HC123AN IL258D
    Text: SEMICONDUCTOR PRODUCTS SHORT FORM CATALOG INTEGRAL 2010-2011 INTEGRAL JSC reserves the right to make changes in device design, specifications and other information identified in this publication without notice and assumes no responsibility for the use of any device described herein.


    Original     		PDF