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    VHC299

    Abstract: 74HC299 74VHC299 74VHC299M 74VHC299MTC 74VHC299N 74VHC299SJ M20D MTC20
    Text: November 1995 74VHC299 8-Input Universal Shift Storage Register with Common Parallel I O Pins General Description The VHC299 is an advanced high speed CMOS device fabricated with silicon gate CMOS technology It achieves the high-speed operation similar to equivalent Bipolar Schottky


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    PDF 74VHC299 VHC299 74HC299 74VHC299 74VHC299M 74VHC299MTC 74VHC299N 74VHC299SJ M20D MTC20

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    Abstract: No abstract text available
    Text: PRELIM INARY Semiconductor November 1995 74VHC299 8-Input Universal Shift/Storage Register with Common Parallel I/O Pins General Description The VHC299 is an advanced high speed CMOS device fab­ ricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky


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    VHC299

    Abstract: 74HC299 74VHC299 74VHC299M 74VHC299MTC 74VHC299N 74VHC299SJ M20D MTC20
    Text: PRELIMINARY November 1995 74VHC299 8-Input Universal Shift/Storage Register with Common Parallel I/O Pins General Description The VHC299 is an advanced high speed CMOS device fab­ ricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky


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    PDF 74VHC299 VHC299 74HC299 74VHC299 74VHC299M 74VHC299MTC 74VHC299N 74VHC299SJ M20D MTC20

    74HC299

    Abstract: No abstract text available
    Text: PRELIM INARY Semiconductor November 1995 74VHC299 8-Input Universal Shift/Storage Register with Common Parallel I/O Pins General Description The VHC299 is an advanced high speed CMOS device fab­ ricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky


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    Q1122

    Abstract: 4119B
    Text: S e m i c o n d u c t o r 74VHC299 8-Input Universal Shift/Storage Register with Common Parallel I/O Pins This device can be used to interface 5V to 3V systems and two supply systems such as battery backup. This circuit pre­ vents device destruction due to mismatched supply and in­


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