75 WATT NPN SWITCHING TRANSISTOR Search Results

75 WATT NPN SWITCHING TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8

75 WATT NPN SWITCHING TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MMBF4856 Abstract: pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the	Original	226AA) 226AE) MMSD1000T1 236AB MMBF0201NLT1 MMBF0202PLT1 MMBF4856 pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA	PDF
BC547 sot package sot-23 Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the	Original	MDC5000T1 MDC5001T1 MDC3105LT1 BC547 sot package sot-23 BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package	PDF
BC337 BC547 Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the	Original	MDC5000T1 MDC3105LT1 BC337 BC547 MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM	PDF
BC327 BC337 noise figure Abstract: BC337 Transistor BC307b MPS5172 "cross-reference" BC237 BC307 BC212 Text: CHAPTER 1 Selector Guide http://onsemi.com 5 http://onsemi.com 6 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11	Original	M1MA151AT1 M1MA151KT1 M1MA152AT1 M1MA152KT1 M1MA151WAT1 M1MA151WKT1 M1MA152WAT1 M1MA152WKT1 BAS16WT1 M1MA141KT1 BC327 BC337 noise figure BC337 Transistor BC307b MPS5172 "cross-reference" BC237 BC307 BC212	PDF
2N3906 Darlington transistor Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212 Text: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11	Original	M1MA151AT1 M1MA151KT1 M1MA152AT1 M1MA152KT1 M1MA151WAT1 M1MA151WKT1 M1MA152WAT1 M1MA152WKT1 BAS16WT1 M1MA141KT1 2N3906 Darlington transistor BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212	PDF
D40CI Abstract: TQ-202 D40C7 D40C1 800 watts audio amp D40C D40C4 16 amp npn darlington power transistors 30734 Text: VERY HIGH GAIN D40C Series NPN POWER DARLINGTON TRANSISTORS 30-50 VOLTS .5 AMP, 6.25 WATTS Designed for driver, regulator, touch switch, I.C. driver, audio output, relay substitute, oscillator, servo-arnplifier, and capacitor multiplier applications. NPN COLLECTOR	OCR Scan	TQ-202 TQ-202 D40CI D40C7 D40C1 800 watts audio amp D40C D40C4 16 amp npn darlington power transistors 30734	PDF
C2N2222A Abstract: 2N2222A Text: 580 Pleasant St. Watertown, MA 02172 PH: 617 926-0404 FAX: (617) 924-1235 2N2222A Features • • • • Meets MIL-S-19500/255 Collector-Base Voltage 75 Collector Current: 800mA Fast Switching 335 nS 75 Volts 0.8 Amps NPN BIPOLAR TRANSISTOR Maximum Ratings	Original	2N2222A MIL-S-19500/255 800mA MSC0275A 100kHz C2N2222A 2N2222A	PDF
D40C4 Abstract: No abstract text available Text: D40C Series File Number 2 3 3 3 0.5-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS hpE Min. — 10,000 1.33 Watt power dissipation at T a = 25° Features: • Operates from 1C w ithout predriver JEDEC TO-202AB Application: POWER TRANSISTO RS	OCR Scan	O-202AB D40C-series D40C1 D40C4 D40C7	PDF
ZTX649 equivalent Abstract: ZTX649 DSA003771 Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ZTX649 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Output Capacitance Cobo 25 50 pF VCB=10V f=1MHz Switching Times ton 55 ns toff 300 ns IC=500mA, VCC=10V	Original	ZTX649 500mA, IC/10 100ms ZTX649 equivalent ZTX649 DSA003771	PDF
rca transistor manual Abstract: rca case outlines diode 1N539 2N301 2N140 transistor bf 175 rca thyristor manual drift-field 2N1637 transistor rca 2n173 Text: RCA Transistor Manual T h is book has been prepared to assist those who work or experiment with semi conductor devices and circuits. It will be useful to engineers, service technicians, edu cators, students, radio amateurs, hobbyists, and others technically interested in transis	OCR Scan		PDF
to225 Abstract: MJE802 MJE800 MJE702 MJE703 mje802g MJE803 MJE700 to-225 MJE700G Text: MJE700, MJE702, MJE703 PNP - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC	Original	MJE700, MJE702, MJE703 MJE800, MJE802, MJE803 MJE700 MJE800 MJE800 to225 MJE802 MJE702 MJE703 mje802g MJE803 to-225 MJE700G	PDF
JE802 Abstract: JE700 JE803 JE700 MOTOROLA JE702 JE703 JE800 75 watt npn switching transistor MJE700T Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP M JE700,T M JE702 Plastic Darlington Com plem entary Silicon Power Transistors M JE703 . . . designed lor general-purpose amplifier and low-speed switching applications. • • • High DC Current Gain — hFE = 2000 Typ @ lc = 2.0 Adc	OCR Scan	JE700 JE702 JE703 JE800 JE802 JE803 MJE700 MJE800 T0220AB, MJE700T JE803 JE700 MOTOROLA 75 watt npn switching transistor	PDF
Untitled Abstract: No abstract text available Text: -r-33-ôl BD533, BD534, BD535, BD536, BD537, BD538 HARRIS SEMICOND SECTOR 5bE J> • Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors File Number iz3 6 43G5571 Q04Db7S 3^1 IHAS TERMINAL DESIGNATIONS General-Purpose Medium-Power Types for Switching and Amplifier Applications	OCR Scan	-r-33-Ã BD533, BD534, BD535, BD536, BD537, BD538 43G5571 Q04Db7S 3B969	PDF
2N3414 Abstract: 2N3416 Text: CENTRAL SEMICONDUCTOR t.1 r - Z' f -Z'rX nimfc.3 □□00E54 0 X 2N3A1 sss&isfüieondöetoa' €@rp. Centrai s@mi€@näuetor Corp. Central Semiconductor Corp. Central semiconductor Corp. 5 2N3416 2N3417 JP> NPN Silicon Transistor 145 Adams Avenue Hauppauge, New York 1 1 7 8 8	OCR Scan	2N3414-2N3 2N3414, 2N3416, Vqb-25v CBR30 0000S23 O-105 O-106 2N3414 2N3416	PDF

transistor mje802 Abstract: No abstract text available Text: ON Semiconductor PNP MJE700 Plastic Darlington Complementary Silicon Power Transistors MJE702 MJE703 NPN . . . designed for general−purpose amplifier and low−speed switching applications. MJE800 • High DC Current Gain — • • MJE802 hFE = 2000 Typ) @ IC	Original	MJE700 MJE702 MJE703 MJE800 MJE802 MJE803 transistor mje802	PDF
Untitled Abstract: No abstract text available Text: SbE J> m HARRIS SEUXCOND SECTOR 4302571 0040A70 b?l M H A S File Number 2374 G E 1 0 0 1 5 ,1 6 ,2 0 ,2 1 ,2 2 ,2 3 T 3 S - 2 -J Silicon N-P-N Darlington Power Transistors TERM INAL DESIGNATIONS FU & O E The GE10015, GE10016and GE10020 thru GE10023 series	OCR Scan	0040A70 GE10015, GE10016and GE10020 GE10023 O-204AE T0-204AE 004007b GE10015	PDF
BD53B Abstract: bd536 BDS34 BD538 Text: BD533, BD534, BD535, BD536, BD537, BD538 Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors File Number 1236 TERM INAL DESIGNATIONS o General-Purpose Medium-Power Types for Switching and Amplifier Applications t : Features: • Low saturation voltages	OCR Scan	BD533, BD534, BD535, BD536, BD537, BD538 O-220AB RCA-BD533-BD538 BD53B bd536 BDS34 BD538	PDF
MSC027 Abstract: No abstract text available Text: Micmsemi Watertown, M A 02172 PH: <B17 >26-0404 FAX: 617) 924-1296 2N2222A Features • • « « Meets MIL-S-19500/255 Collector-Base Voltage 75 Collector Current 800mA f ast 'Switching 335 nS 75 Volts 0.8 Amps NPN BIPOLAR TRANSISTOR Maximum Ratings P ¿T ':G	OCR Scan	MIL-S-19500/255 800mA 2N2222A 100MHz) 100kHz 100kHz SC0275A MSC027	PDF
Untitled Abstract: No abstract text available Text: MJE700, MJE702, MJE703 PNP - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC	Original	MJE700, MJE702, MJE703 MJE800, MJE802, MJE803 MJE700 MJE800 MJE800	PDF
MJE703 Abstract: MJE800 MJE802 MJE803 MSD6100 1N5825 MJE700 MJE700G MJE702 NEW TRANSISTOR Text: MJE700, MJE702, MJE703 PNP - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC	Original	MJE700, MJE702, MJE703 MJE800, MJE802, MJE803 MJE700 MJE800 MJE800 MJE703 MJE802 MJE803 MSD6100 1N5825 MJE700G MJE702 NEW TRANSISTOR	PDF
mje802 Abstract: transistor mje802 MJE703G MJE702 mje800 to225 Text: MJE700, MJE702, MJE703 PNP - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC	Original	MJE700, MJE702, MJE703 MJE800, MJE802, MJE803 MJE700 MJE800 mje802 transistor mje802 MJE703G MJE702 to225	PDF
100 amp npn darlington power transistors Abstract: complementary npn-pnp 500 watt power circuit diagram to225 10 amp npn darlington power transistors 16 amp npn darlington power transistors darlington complementary power amplifier SILICON COMPLEMENTARY transistors darlington Darlington transistors 703 H Text: MJE700, MJE702, MJE703 PNP - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC	Original	MJE700, MJE702, MJE703 MJE800, MJE802, MJE803 MJE700 MJE800 MJE800 100 amp npn darlington power transistors complementary npn-pnp 500 watt power circuit diagram to225 10 amp npn darlington power transistors 16 amp npn darlington power transistors darlington complementary power amplifier SILICON COMPLEMENTARY transistors darlington Darlington transistors 703 H	PDF
D40C4 Abstract: D40C7 NPN POWER DARLINGTON TRANSISTORS Text: 3 8 7 5 0 Í ^ G E SOLID STATE ~~Ql 3075001 001^037 4 ^ J ~ VERY HIGH GAIN NPN POWER DARLINGTON TRANSISTORS T-33-29 D40C Series 30-50 VOLTS .5 AMP, 6.25 WATTS Designed fordriver, regulator, touch switch, I.C. driver, audio output,'relay substitute, oscillator, servo~ampllfier, and	OCR Scan	T-33-29 T0-20Î D40C4 D40C7 NPN POWER DARLINGTON TRANSISTORS	PDF
mmbr901lt1 Abstract: 75 watt npn switching transistor MARKING 7A sot-23 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR901LT1, T3 NPN Silicon H igh-Frequency Transistor Designed primarily for use in high-gain, low-noise small-signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching	OCR Scan	OT-23 MMBR901LT1, mmbr901lt1 75 watt npn switching transistor MARKING 7A sot-23	PDF

75 WATT NPN SWITCHING TRANSISTOR Search Results

75 WATT NPN SWITCHING TRANSISTOR Result Highlights (5)

75 WATT NPN SWITCHING TRANSISTOR Datasheets Context Search

MMBF4856

BC547 sot package sot-23

BC337 BC547

BC327 BC337 noise figure

2N3906 Darlington transistor

D40CI

C2N2222A

D40C4

ZTX649 equivalent

rca transistor manual

to225

JE802

Untitled

2N3414

transistor mje802

Untitled

BD53B

MSC027

Untitled

MJE703

mje802

100 amp npn darlington power transistors

D40C4

mmbr901lt1