V68853
Abstract: brake rectifier RH6030 V68852 M 753 LT RHC resistor RH25-30 m1203l 3260 ba 1203
Text: Field IT Data Sheet 10/68 8.43 Electronic Units and Accessories for Upgrading Older H&B/S&F Actuators to Contrac For Continuous Positioning Level 0: Information • Keeps actuators and their reliability in good condition ■ Option to upgrade actuators of the older generation to newest technology
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a1037
Abstract: uA753
Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS ¿¿PA! 753 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in: m illim eter This product is Dual N-Channel MOS Field Ef fect T ransistor designed for power m anagem ent
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BUV52
Abstract: 100-C A6W 08
Text: 7 353537 0 0 5 5 753 T • S C S -T H O M S O N itn a r ia o H iig s S G S-TH0MS0N B U V 5 2 30E D FAST SWITCHING POWER TRANSISTOR ■ FAST SW ITCHING TIM ES ■ LOW SW ITCHING LOSSES ■ VER Y LOW SATURATION VOLTAGE AND HIGH GAIN FOR REDUCED LOAD OPERA
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BUV52
100-C
A6W 08
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Untitled
Abstract: No abstract text available
Text: E2/E3F Device 8-, 34-Mbit/s Framer TXC-03701B DATA SH EE T FEATURES DESCRIPTION The E2/E3 Fram er E2/E3F is a C M O S VLSI device th at provides the fu nctio ns needed to fram e a w ideband payload to one of four ITU -TSS R ecom m endations: G.742, G .745, G.751, or G.753. The E 2/E 3F interfaces
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34-Mbit/s
TXC-03701B
68-pin
-TSS26-9453
TXC-03701
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Untitled
Abstract: No abstract text available
Text: SLE D in te l • Mfi2bl?S D l l b S m 753 INTEL CORP UP/PRPHLS 87C52-20/80C52-20/80C32-20 COMMERCIAL/EXPRESS 20 MHz MICROCONTROLLER IITL1 ip ir a ig iL u u a iu ^ iV " T ^ ° H V U y 87C52-20/80C52-20/80C32-20—3.5 MHz to 20 MHz, Vcc = 5V ± 20% 87C52-3/80C52-3—24 MHz Internal Operation, Vcc = 5V ±20%
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87C52-20/80C52-20/80C32-20
87C52-20/80C52-20/80C32-20â
87C52-3/80C52-3â
48TCLCL
-J--49â
87C52-20/80C52-20/80C32-20
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it4141
Abstract: TFD 2604
Text: YAMAHA L O I YTD426B APPLICATION MANUAL ITCM ISDN U Interface TCM mode YAMAHA YTD426B APPLICA TIO N MANUAL C AT ALO G No. : LSI-6TD426B3 1998.9 WM =1=145534 GQG4G33 753 IM P O R T A N T N O T IC E . 1. Yam aha reserves th e right to m ake changes to its P rod u cts and to th is d ocu m en t w ith
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YTD426B
YTD426B
LSI-6TD426B3
GQG4G33
00D4D
YTD423B
YTD423D.
it4141
TFD 2604
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Untitled
Abstract: No abstract text available
Text: E2/E3F Device 8-, 34 Mbit/s Framer TXC-03701 DATA SH EE T FEATURES DESCRIPTION The E2/E3 Fram er E2/E3F is a C M O S VLSI device th at provides the functions needed to fram e a w ideband payload to one of four C C IT T R ecom m endations: G .742, G .745, G.751, or G .753. T he E 2/E 3F interfaces
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TXC-03701
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TFK 404
Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317
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20nttc*
10N12*
TFK 404
T1S58
BCI83L
Germanium diode OA 182
TFK diode
transistors 2n 945
v744
akai amplifier
tis62
BCI09
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2SD2137
Abstract: 2SD2137A 2SB1417 2SB1417A S21N
Text: Power Transistors 2SD2137, 2SD2137A 2SD2137, 2SD2137A Silicon NPN Triple-Diffused Planar Type Pow er A m plifier C om plem entary Pair with 2SB1417, 2S B1417A • Features • H igh D C c u r re n t gain h PF and good lin earity • L ow c o lle c to r-e m itte r s a tu ra tio n v o ltag e (VcF.tao)
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2SD2137,
2SD2137A
2SB1417,
2SB1417A
2SD2137
2SD2137
2SD2137A
2SB1417
2SB1417A
S21N
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Untitled
Abstract: No abstract text available
Text: THE INFORMATION CONTAINED HEREON IS THE PR O PE R TY OF EMERSON NETWORK POWER, RECEIPT, P O S SE SS IO N OR TRANSM ITTAL OF THIS DRAWING DO ES NOT LIC EN SE OR IM PLY A N Y RIGHT TO USE, SELL, PROTOTYPE OR MANUFACTU RE FROM THIS INFORMATION. NO REPRODUCTIONS OR PUBLICATION OF THIS INFORMATION, IN WHOLE OR IN PART, SH A LL BE
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2SD2137
Abstract: pc 817 2SB1417 2SB1417A 2SD2137A
Text: 2SD2137, 2SD2137A Power Transistors 2SD2137, 2SD 2137A Silicon NPN Triple-Diffused Planar Type Power Amplifier C om plem entary Pair with 2SB1417, 2SB1417A • Features • H igh DC c u r re n t gain h H -F and good lin earity • L ow c o lle c to r-e m itte r s a tu ra tio n v o ltag e (VtEcsao)
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2SD2137,
2SD2137A
2SB1417,
2SB1417A
2SD2137
2SD2137
pc 817
2SB1417
2SB1417A
2SD2137A
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ZTX753
Abstract: ZTX750 ZTX650 ZTX752 6.8j 100v Scans-00107864 c6011 Ferranti Semiconductors SE74 ZTX751
Text: * FERRANTI semiconductors ZTX750 ZTX751 ZTX752 ZTX753 PNP Silicon Planar M e d i u m P o w e r Transistors FEATURES • 1.5W Pow er dissipation at T amb = 2 5 *C t • 2A con tin uous lc • Excellent gain characteristics to 2A • H igh V C E0 : up to 100 volts
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ZTX750
ZTX751
ZTX752
ZTX753
100mA
100ms
ZTX753
ZTX650
6.8j 100v
Scans-00107864
c6011
Ferranti Semiconductors
SE74
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Untitled
Abstract: No abstract text available
Text: 050" . DUAL ROW STAGGERED series 8219 varicon plug/receptacle MATES WITH SERIES 8218* ’ Shim required for variation 0 02 when m ating w ith series 8 21 9 ORDERING CODE FOR SERIES 8219 Complete a IS d ig it assembly number for each m ating part, plug and receptacle.
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OPTOCOUPLER dc
Abstract: H11B1 v optocoupler H11b1 H11B1 H11B2 H11B3 IEC134 sot908
Text: H11B1 H11B2 H11B3 T O OPTOCOUPLERS O ptically coupled isolators consisting o f an infrared em itting G aAs diode and an npn silicon photo Darlington transistor. Features • Very high o u tp u t/in p u t DC current transfer ratio • isolation voltage o f 2 k V RMS and 2.82 kV DC
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H11B1
H11B2
H11B3
0110b
7Z34-79BA
bbS3T31
D03SSD4
OPTOCOUPLER dc
H11B1 v
optocoupler H11b1
H11B1
H11B2
H11B3
IEC134
sot908
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TT 6053
Abstract: tic 253
Text: FAILSAFE FUSE RESISTORS CUSTOM DESIGN - 1/8W to 50 WATT FR SERIES FEATURES Precision Grade Fuse Resistors! • ■ R CD’s FR series was designed to obtain the best from two devices. It com bines the perform ance of a precision grade resistor with precisely controlled fusing characteristics.
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822275-1
Abstract: 3-822273-1 LJ41 822269-1
Text: Catalog 1307515 Issued 9-99 PLCC Sockets Continued Low Profile, Surface Mount Sockets Product Facts m Low profile — only 4.7 [.185] max.* for high density pc board stacking m Compatible footprint allows for socket or direct mounting ASIC & General a Housing slots accept
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Untitled
Abstract: No abstract text available
Text: SD -73386-018 MATERIALS AND FINISHES: BODY ST. STEEL PASSIVATED 1.250 REF 31.75 N COUPLING NUT BRASS PLATED NICKEL CENTER CONTACT BERYLLIUM COPPER PLATED GOLD .500/12.7 ACROSS F L A T S - INSULATOR TEFLON RETAINING RING BERYLLIUM COPPER GASKET SILICONE RUBBER
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MIL-STD-348,
SD-73386-018
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Untitled
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SC4690 Unit in mm PO W ER A M PLIFIER A PPLICA TIO N S • • Complementary to 2SAX805 Recommend for 70W High Fidelity Audio Frequency Amplifier output Stage. 1 5 .8 1 0 .5 ¿ 3 .6 * 0 .2 M A X IM U M RATIN G S Ta = 25°C
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2SC4690
2SAX805
2-16F1A
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C14SC
Abstract: No abstract text available
Text: November Revised D ecem ber 1998 S E M IC O N D U C T O R TM 74AC14 Hex Inverter with Schmitt Trigger Input General Description T h e AC 14 contains six inverter gates each w ith a S chm itt trig ge r input. The AC 14 contains six logic inverters w hich accept standard C M OS input signals and provide standard
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74AC14
C14SC
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors S & C tiO fl 5 Linear Data Communications Data Sheets ICs for Data Communications CONTENTS M C 145406 E ÌA -2 3 2 -D A /.2 8 d r iv e r/re c e iv e r. 669 N E 5170 O ctal line d r i v e r .
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N4002
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2SB541
Abstract: 2SD388 C14A 2SD388 A 2sd388/2sb541 251C audio amplifier 50w 50v
Text: 2SD 388/2SB541 2SD388/2SB541 npn/ pnp E.nm * y =• > h 7 v * * * NPN/PNP SILICON TRIPLE DIFFUSED MESA TRANSISTOR ffl/A u d io Frequency Power Amplifier WttmZPACKAGE DIMENSIONS Unit:mm ft St/FEA T U R E • 40~ 50W H i-Fi 7 v ^2 y t v 9 ') '<V — \ 7 v v 7 9 7;
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2SD388
2SB541
2SD388/2SB541
2SB541
2SB541/2SD388
350/js,
C14A
2SD388 A
2sd388/2sb541
251C
audio amplifier 50w 50v
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2SD1530
Abstract: No abstract text available
Text: Power T ransistors • {^32654 O O l l l t i B b40 MP NC 5 2SD1530 PANASONIC INDL /E LE KÍ S E M I 2SD1530 fc^E D Silicon NPN Epitaxial Planar Type Package Dimensions Power Switching • • • • High speed switching High collector-base voltage Vcbu)
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2SD1530
2SD1530
25-TC
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UAA170
Abstract: UAA 170
Text: SIEMENS LED Driver for Light Spot Displays U AA 170 Bipolar IC IC for driving 16 light em itting diod es. D e p e n d in g on the input voltage, the individual L E D s are driven within o n e row in form of a light spot. T h e U A A 170 p ro v id e s a lin e ar relation
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UAA170
UAA170
UAA 170
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G8ms
Abstract: 4HL1
Text: 3SK225 SILICON N CHANNEL DUAL GATE MOS TYPE FE LD EFFECT TRANSISTOR U n it in mm T V T U N E R , V H F RF A M P L I F I E R A P P L I C A T I O N S . + 0.2 Z.9 -C13 F M T U N E R APPLIC A TIO NS. T V T U N E R , U H F RF A M P L I F I E R A P P L I C A T I O N S .
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3SK225
G8ms
4HL1
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