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    transistor A4t

    Abstract: transistor A4t 45 transistor A4t 35 transistor A4t 16
    Text: ï éoJm RAfITRON CORP 33E D 755SD15 aGOQG71 □ FMx 1208FRAM Memory r ^ M 4,096-Bit Nonvolatile Ferroelectric RAM Engineering Evaluation Unit* T R ü N v Features • 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512w x 8b ■ CMOS Technology with Integrated Ferroelectric


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    755SD15 aGOQG71 1208FRAM® 096-Bit -250ns 500ns -44mW 124-Pin 7S5S015 transistor A4t transistor A4t 45 transistor A4t 35 transistor A4t 16 PDF

    Untitled

    Abstract: No abstract text available
    Text: M IR O N DM2202/2212EDRAM 1Mbx 4 EnhancedDynamic RAM Product Specification Features • 2Kbit SRAM Cache Memory for 15ns Random Reads Within a Page ■ Fast 4Mbit DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes


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    DM2202/2212EDRAM 256-byte DM2212) 755SD15 DM2202/DM2212 DM2Z02J-15 0000M07 PDF

    MC6805

    Abstract: Ramtron FRAM Serial Memory
    Text: F IM TRO N 2 M 5 1 6 F R A M S e r i a l M e m o r y Product Preview* Features • 16Kbit Nonvolatile Ferroelectric RAM Organized as 2,048 x 8 ■ Low Power CMOS Technology - lOpA Standby Over Industrial Temperature Range - 5|iA Standby Over Commercial Temperature Range


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    FM25160FRAMÂ 16Kbit -10Billion 25160-PS 00003bb MC6805 Ramtron FRAM Serial Memory PDF

    Untitled

    Abstract: No abstract text available
    Text: FM1608S FRAM Memory r^ M 65,536-Bit Nonvolatile Ferroelectric RAM Product Specification T R O N Features • 65,536 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 8,192 x 8 ■ CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Operation


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    FM1608S 536-Bit 180ns 320ns 1608S 28-Pin) 1608S 7SS501S PDF