PSMN005-75P
Abstract: 75p diode PSMN005-75B
Text: PSMN005-75P/75B N-channel enhancement mode field-effect transistor Rev. 01 — 26 April 2002 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability: PSMN005-75P in SOT78 TO-220AB
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PSMN005-75P/75B
PSMN005-75P
O-220AB)
PSMN005-75B
OT404
OT404,
75p diode
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03ad10
Abstract: PSMN008-75B PSMN008-75P
Text: PSMN008-75P; PSMN008-75B N-channel enhancement mode field-effect transistor Rev. 01 — 18 September 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:
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PSMN008-75P;
PSMN008-75B
PSMN008-75P
PSMN008-75B
OT404
OT404,
03ad10
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Untitled
Abstract: No abstract text available
Text: PSMN008-75P; PSMN008-75B N-channel enhancement mode field-effect transistor Rev. 01 — 18 September 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:
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PSMN008-75P;
PSMN008-75B
PSMN008-75P
PSMN008-75B
OT404
OT404,
MBK106
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HZG469
Abstract: PSMN008-75B PSMN008-75P 75b diode 75p diode
Text: PSMN008-75P/75B TrenchMOS standard level FET Rev. 03 — 08 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve the lowest possible on-state resistance in each package.
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PSMN008-75P/75B
OT404,
HZG469
PSMN008-75B
PSMN008-75P
75b diode
75p diode
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75P-140
Abstract: 2mbi 2MBI 75P-140
Text: 2-Pack IGBT 1400V 75A 2MBI 75P-140 n Outline Drawing IGBT MODULE P-Series n Features • Square SC SOA at 10 x IC • Simplified Parallel Connection • Narrow Distribution of Characteristics • High Short Circuit Withstand-Capability n Applications • High Power Switching
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75P-140
1ms400V
75P-140
2mbi
2MBI 75P-140
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2MBI 75P-140
Abstract: A1000T
Text: 2-Pack IGBT 1400V 75A 2MBI 75P-140 n Outline Drawing IGBT MODULE P-Series n Features • Square SC SOA at 10 x IC • Simplified Parallel Connection • Narrow Distribution of Characteristics • High Short Circuit Withstand-Capability n Applications • High Power Switching
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75P-140
2MBI 75P-140
A1000T
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PSMN008-75P
Abstract: 75p diode
Text: PSMN008-75P N-channel TrenchMOS SiliconMAX standard level FET Rev. 04 — 10 December 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for
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PSMN008-75P
PSMN008-75P
75p diode
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PSMN005-75P
Abstract: No abstract text available
Text: PSMN005-75P N-channel TrenchMOS SiliconMAX standard level FET Rev. 01 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for
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PSMN005-75P
PSMN005-75P
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Untitled
Abstract: No abstract text available
Text: CU3225K175G Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage270 V(RMS) Max. Applied Voltage175 V(DC) Max. Applied Voltage225 I(TM) Max.(A) Peak Current400 V(C) Nom. (V) Clamping Voltage455 @I(PP) (A) (Test Condition)5.0 W(TM) Max.(J) Transient Energy5.6
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CU3225K175G
Voltage270
Voltage175
Voltage225
Current400
Voltage455
StyleDO-214AB
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Untitled
Abstract: No abstract text available
Text: 2322-593-84617 Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage V(RMS) Max. Applied Voltage460 V(DC) Max. Applied Voltage615 I(TM) Max.(A) Peak Current1200 V(C) Nom. (V) Clamping Voltage1.24k @I(PP) (A) (Test Condition)10.0 W(TM) Max.(J) Transient Energy63.0
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Voltage460
Voltage615
Current1200
Energy63
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Untitled
Abstract: No abstract text available
Text: 2322-593-34617 Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage V(RMS) Max. Applied Voltage460 V(DC) Max. Applied Voltage615 I(TM) Max.(A) Peak Current1200 V(C) Nom. (V) Clamping Voltage1.24k @I(PP) (A) (Test Condition)10.0 W(TM) Max.(J) Transient Energy63.0
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Voltage460
Voltage615
Current1200
Energy63
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Untitled
Abstract: No abstract text available
Text: 2322-593-04617 Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage V(RMS) Max. Applied Voltage460 V(DC) Max. Applied Voltage615 I(TM) Max.(A) Peak Current1200 V(C) Nom. (V) Clamping Voltage1.24k @I(PP) (A) (Test Condition)10.0 W(TM) Max.(J) Transient Energy63.0
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Voltage460
Voltage615
Current1200
Energy63
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diode zener 27c
Abstract: 27c diode ZENER DIODE 27c
Text: BZD27C3V6P~BZD27C75P VOLTAGE REGULATOR DIODES POWER 3.6 to 75 Volts VOLTAGE 800 mW SOD-123FL Unit：inch mm • Low profile surface-mount package 0.115(2.90) 0.106(2.70) • Zener and surge current specification • Low leakage current 0.043(1.08) 0.038(0.98)
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BZD27C3V6P
BZD27C75P
OD-123FL
OC/10
2002/95/EC
IEC61249
diode zener 27c
27c diode
ZENER DIODE 27c
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diode zener 27c
Abstract: 27c diode c5v1p 27C zener ZENER DIODE 27c diode 27c C18p zener 6v8p c6v8p c51p
Text: BZD27C3V6P~BZD27C75P VOLTAGE REGULATOR DIODES 800 mW POWER 3.6 to 75 Volts VOLTAGE FEATURES • Sillicon Planar Zener Diode • Low profile surface-mount package • Zener and surge current specification • Low leakage current • Excellent stability • High temperature soldering : 260 OC/10 sec. at terminals
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BZD27C3V6P
BZD27C75P
OC/10
2002/95/EC
OD-123FL
MIL-STD-750
BZD27-C7V5P
BZD27-C75P)
diode zener 27c
27c diode
c5v1p
27C zener
ZENER DIODE 27c
diode 27c
C18p zener
6v8p
c6v8p
c51p
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diode zener 27c
Abstract: BZD27-C4V7P 27c diode 27C zener SOD-123FL c18p c51p zener BZD27-C5V1P C12PP diode 27c
Text: BZD27C3V6P~BZD27C75P VOLTAGE REGULATOR DIODES POWER 3.6 to 75 Volts VOLTAGE 800 mW SOD-123FL Unit：inch mm • Low profile surface-mount package 0.115(2.90) 0.106(2.70) • Zener and surge current specification • Low leakage current 0.043(1.08) 0.038(0.98)
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BZD27C3V6P
BZD27C75P
OD-123FL
OC/10
2002/95/EC
IEC61249
OD-123FL
MIL-STD-750
diode zener 27c
BZD27-C4V7P
27c diode
27C zener
SOD-123FL
c18p
c51p zener
BZD27-C5V1P
C12PP
diode 27c
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Untitled
Abstract: No abstract text available
Text: 2322593.4616 Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage750 V(RMS) Max. Applied Voltage460 V(DC) Max. Applied Voltage615 I(TM) Max.(A) Peak Current1.2k V(C) Nom. (V) Clamping Voltage1.24k @I(PP) (A) (Test Condition)10 W(TM) Max.(J) Transient Energy63
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Voltage750
Voltage460
Voltage615
Energy63
Time20n
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2mb175p-140
Abstract: 2MBI 75P-140 75P-140 1400V 2mb175 2mb175p Z125 2MBI75P-140 IGBT parallel ts125
Text: F U JI 2MBI 75P-140 IGBT MODULE P-Series n 2-Pack IGBT 1400V 75A Outline Drawing n Features • Square SC SO/A at 10 x l c • Simplified Parallel Connection • Narrow Distribution o f Characteristics • High Short Circuit Withstand-Capability n Applications
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75P-140
Ts125
DD051D1
2MBI75P-140
on125Â
125-C
00051D2
2mb175p-140
2MBI 75P-140
75P-140
1400V
2mb175
2mb175p
Z125
2MBI75P-140
IGBT parallel
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16PIN
Abstract: 74F175 SOL16 TC74ACT175
Text: INTEGRATED TOSHIBA QUAD TECHNICAL D -T Y P E FLIP TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT CIRCUIT FLOP TC74ACT1 75P/F/FN DATA SILICON MONOLITHIC WITH CLEAR The TC74ACT175 is an advanced high speed CMOS QUAD D-TYPE FLIP FLOP fabricated with silicon gate and double layer metal wiring C2MOS technology.
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TC74ACT1
75P/F/FN
TC74ACT175
16PIN
DIP16-P-300A)
75MAX
735TYP
16PIN
74F175
SOL16
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Untitled
Abstract: No abstract text available
Text: INTEGRATED TOSHIBA Q U AD TECHNICAL D -T Y P E FLIP TOSHIBA CM O S DIGITAL INTEGRATED CIRCUIT CIRCUIT FLOP TC74AC1 75P/F/FN/FS DATA SILICON MONOLITHIC WITH CLEAR The TC74AC175 is an advanced high speed CMOS QUAD DTYPE FLIP FLOP fabricated with silicon gate and double layer metal wiring C2MOS technology.
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TC74AC1
75P/F/FN/FS
TC74AC175
16PIN
200mil
16PIN
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74F175
Abstract: SOL16 SSOP16 TC74AC175
Text: INTEGRATED T O SH IB A QUAD TECHNICAL D -T Y P E FLIP TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT CIRCUIT T C 7 4 A C 1 75P/F/FN/FS DATA SILICON MONOLITHIC FLOP WITH CLEAR The TC74AC175 is an advanced high speed CMOS QUAD DTYPE FLIP FLOP fabricated with silicon gate and double layer metal wiring C2MOS technology.
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TC74AC1
75P/F/FN/FS
TC74AC175
16PIN
200mil
OP16-P-300
705TYP
TC74AC175-
74F175
SOL16
SSOP16
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Untitled
Abstract: No abstract text available
Text: INTEGRATED T O SH IB A QUAD TECHNICAL D -T Y P E FLIP TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT CIRCUIT FLOP T C 7 4 A C T 1 75P/F/FN DATA SILICON MONOLITHIC WITH CLEAR The TC74ACT175 is an advanced high speed CMOS QUAD D-TYPE FLIP FLOP fabricated with silicon gate and double layer m etal wiring C2MOS technology.
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75P/F/FN
TC74ACT175
16PIN
16PIN
200mil
S0P16
705TYP
TC74ACT175-
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Untitled
Abstract: No abstract text available
Text: INTEGRATED TO SH IB A Q UAD TECHNICAL D -T Y P E FLIP TOSHIBA CM OS DIGITAL INTEGRATED CIRCUIT CIRCUIT FLOP T C 7 4 A C T 1 75P/F/FN DATA SILICON MONOLITHIC WITH CLEAR The TC74ACT175 is an advanced high speed CMOS QUAD D-TYPE FLIP FLOP fabricated with silicon gate and doublelayer metal wiring C2MOS technology.
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75P/F/FN
TC74ACT175
16PIN
16PIN
200mil
TC74ACT1
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Untitled
Abstract: No abstract text available
Text: INTEGRATED T O SH IB A QUAD TECHNICAL D -T Y P E FLIP TO SH IBA CM O S DIGITAL INTEGRATED CIRCUIT CIRCUIT FLOP T C 7 4 A C 1 75P/F/FN/FS DATA SILICON M ONOLITHIC WITH CLEAR The TC74AC175 is an advanced high speed CMOS QUAD DTYPE FLIP FLOP fabricated with silicon gate and double layer metal wiring C2MOS technology.
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75P/F/FN/FS
TC74AC175
16PIN
16PIN
200mil
S0P16
705TYP
TC74AC175-
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MOS Controlled Thyristor
Abstract: "mos controlled thyristor" D 13 C M 14 100F1 TV-75
Text: MOS CONTROLLED THYRISTOR PRODUCT MATRIX T O -2 4 7 5 L E A D T O -2 4 7 M 0 -0 9 3 A A M C TV35P60F1D M C TV75P60E 1 M C TV75P100E1 M C TA 65P 100F1 M C TA 75P 60E 1 U N IT S V drm 600 600 600 1000 1000 600 V ' k 90 35t 35+ 75 65 65 75 A *KM 50 50 120 100
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CTG35P60F1
TV35P60F1D
TV75P60E
TV75P100E1
100F1
MOS Controlled Thyristor
"mos controlled thyristor"
D 13 C M 14
TV-75
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