75TF Search Results

Contextual Info: 75TF Series Temperature Controls Snap-Action Temperature Controls The 75TF line of temperature controls combines automatic reset and single operation in one unique switch design. Two independent switch mechanisms, electrically in series, provide primary and secondary temperature sensing at electrical loads up to 25 amps at 240VAC. The 5/8”

AIRSTREAM

Abstract: AIRSTREAM 150 bi-metal thermal switch LR10281 bimetal temperature control thermostat AIRSTREAM bimetal disc 35C61 MH-5304
Contextual Info: 75TF Series Temperature Controls Snap-Action Temperature Controls The 75TF line of temperature controls combines automatic reset and single operation in one unique switch design. Two independent switch mechanisms, electrically in series, provide primary and secondary temperature sensing at electrical loads up to 25 amps at 240VAC. The 5/8”

dur 14c 7 segment display

Abstract: MIC-R02 C175
Contextual Info: UNCONTROLLED DOCUMENT REV. 1.10 1.10 CO.04 3 ] J REV. LC D -S 3X 1M 75TF A E.C.N. A lC CO. 0 4 3 ] i PART NUMBER NUMBER AND REVISION COMMENTS DATE E.C.N. # 1 1 1 4 6 . 0 2 .0 7 .0 7 2,8 0 [0.110] MAX. 6 .3 5 C0.E50: L 1.60 C0.063: L 1.10 [0 .0 4 3 ] r 5 6 .3 0 ± 0 .2 0 [2 .2 1 7 ± 0 .0 0 8 ]

Contextual Info: 1 M B I300F-120 300A 1 O u t l i n e IGBT Drawings IGBT MODULE : Features Low Saturation Voltage • W EEB (M O S -y — U B iS ) • Voltage Drive Variety of Power Capacity Series : A p p lic a tio n s > '< —9 Inverter fo r M o to r Drive • A C , DC"*f — # 7 >~f AC-DC Servo Drive Am plifier

Contextual Info: MITSUBISHI IGBT MODULES 75TF-28H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of six IGBTs in a three phase bridge con­ figuration, with each transistor hav­

diode bridge LT 402

Contextual Info: MITSUBISHI IGBT MODULES 75TF-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are de­ signed fo r use in sw itching a pp lica ­ tions. Each m odule consists of six IGBTs in a three phase bridge co n ­ figuration, w ith each tra n sisto r hav­

therm-o-disc 36t

Abstract: therm-o-disc 58T therm-o-disc 60T
Contextual Info: SNAP-ACTING TEMPERATURE CONTROLS Contents 36T 60T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

25TN2H

Abstract: ME501210 800HB E501606 M6AB 1200HB-66H 57959L E50081 20CSJ060 30CSJ060
Contextual Info: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 n _ i j ] _ s i _ h A E Dim. Inches Millimeters Dim. Inches Millimeters Dim. Inches 0.79 20.0 A 1.54 Max. 39.0 Max. B 0.61 15.6 B 1,268±0.008

Contextual Info: MITSUBISHI IGBT MODULES 75TF-12H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching appli­ cations. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor

400HA-12E

Abstract: CM100TF-12e
Contextual Info: POliJEREX I NC BTE I> • 72=^21 DDG37SS 1 HPRX T^2 W HHBSX_ _ Powerex, Inc., HilUs Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 EFFICIENT E-SERIES IGBTMOD TRANSISTOR POWER MODULES

DD1750

Contextual Info: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.

M52777SP

Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Contextual Info: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30

130LA10A

Contextual Info: NEW PRODUCT CERMETEK MICROELECTRON ICS 52E » 2005603 0001274 110 « C E R CH1819 - Data Access Arrangement Pin Compatible With The DS2249 K ^ _ I-7 S -0 7 -1 3 FEATURES • Form fit and pin compatible with Dallas DS2249 • Interfaces voice/data to the public switched telephone

Contextual Info: C L-G D 62X X à "CIRRUS LOGIC Preliminary Data Book FEATURES • IBM®-VGA hardware-compatible ■ Integrated RAMDAC ■ Single DRAM LCD/VGA Controllers for Monochrome/ Color Notebook Computers Integrated programmable frequency synthesizer — 65 MHz at 5.0V; 40 MHz at 3.3V

NTP 7100

Abstract: UM 7107 17p107 7107 dmm HTR 512-1 IR LFN C712 PC-9800V IC-8311A
Contextual Info: M O S J M J I0 S& M O S Integ rated C ircu it P D 1 7 1 0 7 L ,1 7 1 0 7 L ÎA 4 fcf'y h • 7 7 °#T-f //PD17107L, 17107LCA) It, ROM I K ' U b 512 X hP - 7 16 fcf'y h), RAM 16 x 4 b'>y h, I/O tH— h 11 □ — ^ T-To U J M C /i I ' 1 « t z m t m 'M 2 ^ * W :<M£TZ>m£h^<n

Contextual Info: MITSUBISHI IGBT MODULES 75TF-12H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are de­ signed fo r use in sw itching a p p li­ cations. Each m odule consists of six IGBTs in a three phase bridge configuration, w ith each tran sistor

MC1406

Abstract: Motorola mc14433 75tf CASE-710 DAC08
Contextual Info: Data Conversion The line of data conversion products which Motorola offers spans a wide spectrum of speed and resolution/accuracy. Features, including bus compatibility, minimize external parts count and provide easy interface to microprocessor systems. Various technologies, such as Bipolar and CMOS, are utilized

thyristor tt 18 f 1000

Abstract: coto 1200 eto thyristor thyristor tt 18 N 1100 LT 5232 thyristor tt 330 n thyristor TT 18 N ft01 ft06 ic TA 8719
Contextual Info: C— IT^nnKpn SANKEN TFC Thyristor Flicker Collector m a o t f c ¿, m. H - e s ia n M 38 s t it c >j x * » ^mxisWo 1-2.mil $ TO. TOJ U Uc Ü TFCÜ «*?>£-«{ttcisa^t-r. T F C ß jS ftS 3 fE £ ffiflf L*-t<7>T\ < 7 £ c iH iJ : U * « J E « ( 7 > ö lÄ ttÄ i> U

TDK CHS MSS

Abstract: "Humidity Sensor" NTCG104BH103JT CHS-MSS mcc 95 08101b TYPE RH-50 K31S TDK TU-20A
Contextual Info: P r o d u c t U p d a t e F i l m S & m ftttgftd Resistance Change Type Humidity Sensor Units with High-Accuracy Detection and Output Control CHS m jfiJSRoHSlB^ S Îtë Z R o H S ifr$ -:£ â M a fi EU D ire c tiv e 2 0 0 2/95 /E C , Series g IÜ Ä ± , a*ä6M Ä-ff!iKi* awaE(PBB «)iiaraE«(PBDE).

thermodisc 37t series

Abstract: therm-o-disc 36t NTC 20K thermistor disc
Contextual Info: Control Selection Chart Series Category General Purpose 2-Pole High-Temperature Moisture Resistant Bimetal Disc Thermostats Adjustable Auto Reset/Fuse Combo Water Heating Capillary Radiant Sensor Moisture Resistant Low Load Time Delay Motor Protection 10 MICROTEMP

17121E

Abstract: aatj BTZ 12h ltzt 64X4 97053 35H-W X20878 BL-5B D17121
Contextual Info: t 8— N E C 5* • 5/ — S ^ M O S In teg rated C ircu it j « P D 1 7 1 2 1 4 t i -y h • • > y ÿ > f 7 7 , , 7 - f i > n 3 > h P - 7 juPD17121 l i , rS’ - l ' v « ^ £ 4 fcf *y ^ • '> > / i n - * > / / * n — ?'•?> • Mt -y I-@K, ■> 'I TU- • -i > ÿ 7 x —X SrrtiSL T I.'

GE2 75A

Contextual Info: MITSUBISHI IGBT MODULES 75TF-28H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are de­ signed fo r use in sw itching a pp lica ­ tions. Each m odule consists of six IGBTs in a three phase bridge co n ­ figuration, w ith each tra n sisto r hav­