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    76113 SOT223 Search Results

    76113 SOT223 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    76113-101 Amphenol Communications Solutions 76113-101-TERM Visit Amphenol Communications Solutions
    76113-102 Amphenol Communications Solutions JUMPER Visit Amphenol Communications Solutions
    91276-113HLF Amphenol Communications Solutions BergStik® 2.54mm, Board To Board Connector, Unshrouded Header, Through Hole, Single Row, 13 Positions, 2.54mm Pitch, Vertical, 22.86mm (0.9in) Mating, 5.72mm (0.225in) Tail. Visit Amphenol Communications Solutions
    54776-113-06LF Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded Vertical Stacking Header, Through Hole, Double row , Double body, Triplex, 6 Positions, 2.54mm (0.100in) Pitch Visit Amphenol Communications Solutions
    85761-1301LF Amphenol Communications Solutions Metral® Board Connectors, Backplane Connectors, 5 Row Signal Receptacle,Straight, Press-Fit. Visit Amphenol Communications Solutions

    76113 SOT223 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    76113

    Abstract: AN7254 AN7260 AN9321 AN9322 HUF76113T3ST TB334
    Text: HUF76113T3ST Data Sheet June 2003 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original     		PDF HUF76113T3ST 76113 AN7254 AN7260 AN9321 AN9322 HUF76113T3ST TB334

    TA7611

    Abstract: TB334 AN7254 AN7260 AN9321 AN9322 HUF76113T3ST
    Text: HUF76113T3ST Data Sheet December 2001 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original     		PDF HUF76113T3ST TA7611 TB334 AN7254 AN7260 AN9321 AN9322 HUF76113T3ST

    n13 sot 23

    Abstract: No abstract text available
    Text: HUF76113T3ST Data Sheet June 1999 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		PDF HUF76113T3ST n13 sot 23

    n13 sot 23

    Abstract: 44E10 AN7254 AN7260 AN9321 AN9322 HUF76113T3ST TB334
    Text: HUF76113T3ST TM Data Sheet June 2000 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4388.3 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced


    Original     		PDF HUF76113T3ST OT-223 330mm 100mm EIA-481 n13 sot 23 44E10 AN7254 AN7260 AN9321 AN9322 HUF76113T3ST TB334

    Untitled

    Abstract: No abstract text available
    Text: HUF76113T3ST Data Sheet January 2003 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original     		PDF HUF76113T3ST

    Untitled

    Abstract: No abstract text available
    Text: HUF76113T3ST Data Sheet June 2000 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4388.3 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced


    Original     		PDF HUF76113T3ST

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    Saber

    Abstract: TB334 relay spice model mosfet 407 76113 Power MOSFET SOT-223 Power logic MOSFET SOT-223 power relay N-channel mosfet Logic Level N-Channel Power MOSFET HUF76113T3ST
    Text: HUF76113T3ST interrii June 1999 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features Logic Level Gate Drive # This N-Channel power MOSFET is manufactured using the innovative &WMW W UltraFET process. This advanced * process technology achieves the


    OCR Scan     		PDF HUF76113T3ST TB334, OT-223 Saber TB334 relay spice model mosfet 407 76113 Power MOSFET SOT-223 Power logic MOSFET SOT-223 power relay N-channel mosfet Logic Level N-Channel Power MOSFET HUF76113T3ST

    Untitled

    Abstract: No abstract text available
    Text: i n t e r n a HUF76113T3ST i Ju n e 1999 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET F ile N u m b e r 4388.2 Features • Logic Level G ate Drive This N-Channel power M O S F E T is • 4.7A, 30V manufactured using the innovative • Ultra Low On-Resistance, r ^ o N = 0.031 £2


    OCR Scan     		PDF HUF76113T3ST