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    Rochester Electronics LLC HUF76143P3

    N-CHANNEL POWER MOSFET
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    DigiKey HUF76143P3 Bulk 108,627 430
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    Rochester Electronics LLC HUF76143S3

    MOSFET N-CHANNEL 30V 75A
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    DigiKey HUF76143S3 Bulk 4,000 398
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    Rochester Electronics LLC HUF76143S3ST

    N-CHANNEL POWER MOSFET
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    DigiKey HUF76143S3ST Bulk 855 423
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    TE Connectivity 1976143-1

    SDE COMMERCIAL TOOL OR DIE
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    DigiKey 1976143-1 Bulk 4 1
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    Mouser Electronics 1976143-1 10
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    Newark 1976143-1 Bulk 2 1
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    RS 1976143-1 Bulk 1
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    TTI 1976143-1 Each 5
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    Interstate Connecting Components 1976143-1 1
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    Avnet Abacus 1976143-1 8 Weeks 5
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    Master Electronics 1976143-1 10
    • 1 $909.74
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    Sager 1976143-1 1
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    Brady Worldwide Inc 76143

    B851 5.75X3 BLK/WHT 1-SIDED 25/P
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    DigiKey 76143 Bulk 1
    • 1 $60.57
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    Newark 76143 Pack 1
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    Future Electronics 76143 6 Weeks 1
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    Onlinecomponents.com 76143
    • 1 $57.99
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    76143 Datasheets (1)

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    76143 Brady Worldwide B851 5.75X3 BLK/WHT 1-SIDED 25/P Original PDF

    76143 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: PRODUCT NO SEE TABLE COMMENTS 76143-001 -002 76148-001 LOOSE PIECE -003 -004 76148-003 LOOSE PIECE -005 -006 76148-005 LOOSE PIECE -007 76148-008 76148-007 LOOSE PIECE MATERIAL OVER PLATING UNDER PLATING BRASS, FULL HARD ALLOY 26000 .05u/20u" TO 2.03u/80ii" 60Sn/40Pb


    OCR Scan     		05u/20u" 03u/80ii" 60Sn/40Pb 03u/80u" 05n/20u" 03u/80w" PDF

    Untitled

    Abstract: No abstract text available
    Text: V826632M24SA 32M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MICRODIMM MODULE Features Description • 172 Pin Unbuffered 33,554,432 x 64 bit Organization DDR MICRODIMM Modules ■ Utilizes High Performance 32M x 8 DDR SDRAM in SOC Packages ■ Single +2.5V ± 0.2V Power Supply


    Original     		V826632M24SA DDR400 PDF

    76143S

    Abstract: 76143P Harris 76143p
    Text: 76143P3, 76143S3, 76143S3S Semiconductor November 1998 Data Sheet 75A, 30V, 0.0055 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    OCR Scan     		HUF76143P3, HUF76143S3, HUF76143S3S O-263AB HUF76143S3S O-263AB 76143S 76143P Harris 76143p PDF

    76143S

    Abstract: 76143P HUF76143P3 HUF76143S3S HUF76143S3ST TB334 6143P3
    Text: 76143P3, 76143S3S Semiconductor Data Sheet 75A, 30V, 0.0055 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs HUF7 are manufactured using the innovative UltraFET process. 6143P3 This advanced process technology


    Original     		HUF76143P3, HUF76143S3S 6143P3 HUF76 143S3S HUF76143 76143S 76143P HUF76143P3 HUF76143S3S HUF76143S3ST TB334 6143P3 PDF

    00000M

    Abstract: No abstract text available
    Text: TO SH IB A TMP88PS76 CMOS 8-Bit Microcontroller TMP88PS76F The TMP88PS76 are the high-speed and high performance 8-bit single chip microcomputers which built in a program storage area 64 Kbyte and the One-Time PROM of bector table storage area (256 byte). The


    OCR Scan     		TMP88PS76 TMP88PS76F TMP88PS76 TMP88CP76/S76. TC571000an TMP88PS76F P-QFP80-1420-0 00000M PDF

    76143S

    Abstract: 76143P TA7614 AN9321 AN9322 HUF76143P3 HUF76143S3S HUF76143S3ST TB334 diode 98e
    Text: 76143P3, 76143S3S Data Sheet 75A, 30V, 0.0055 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF76143P3, HUF76143S3S 2001opment. 76143S 76143P TA7614 AN9321 AN9322 HUF76143P3 HUF76143S3S HUF76143S3ST TB334 diode 98e PDF

    76143P

    Abstract: 76143S TA7614 AN9321 AN9322 HUF76143P3 HUF76143S3S HUF76143S3ST TB334
    Text: 76143P3, 76143S3S Data Sheet 75A, 30V, 0.0055 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF76143P3, HUF76143S3S 199ts 76143P 76143S TA7614 AN9321 AN9322 HUF76143P3 HUF76143S3S HUF76143S3ST TB334 PDF

    Untitled

    Abstract: No abstract text available
    Text: V826632M24SA 32M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MICRODIMM MODULE Features Description • 172 Pin Unbuffered 33,554,432 x 64 bit Organization DDR MICRODIMM Modules ■ Utilizes High Performance 32M x 8 DDR SDRAM in SOC Packages ■ Single +2.5V ± 0.2V Power Supply


    Original     		V826632M24SA DDR400 PDF

    TA7614

    Abstract: TA76143 50E3 IR 28E2 75E2 76143S
    Text: 76143P3, 76143S3S Semiconductor Data Sheet 75A, 30 V, 0.0055 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		HUF76143P3, HUF76143S3S HUF76143 TA7614 TA76143 50E3 IR 28E2 75E2 76143S PDF

    TMP88PS76F

    Abstract: ilo3 BM11157 TC571000
    Text: TO SH IB A TMP88PS76 CMOS 8-Bit Microcontroller TMP88PS76F The TMP88PS76 are the high-speed and high performance 8-bit single chip microcomputers which built in a program storage area 64 Kbyte and the One-Time PROM of bector table storage area (256 byte). The


    OCR Scan     		TMP88PS76 TMP88PS76F TMP88PS76 TMP88CP76/S76. TC571000 TMP88PS76F P-QFP80-1420-0 ilo3 BM11157 PDF

    2sc5967

    Abstract: transistor 2SC5967
    Text: Ordering number : ENN7614 2SC5967 NPN Triple Diffused Planar Silicon Transistor 2SC5967 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • High-speed. High breakdown voltage VCBO=1700V . High reliability (Adoption of HVP process).


    Original     		ENN7614 2SC5967 2048B 2SC5967] 2sc5967 transistor 2SC5967 PDF

    76143S

    Abstract: 76143P
    Text: interdi 76143P3, 76143S3S D ata S h e e t 75A, 30V, 0.0055 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		HUF76143P3, HUF76143S3S HUF76143S3S 76143S 76143P PDF

    Untitled

    Abstract: No abstract text available
    Text: V826632M24SA 32M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MICRODIMM MODULE Features Description • 172 Pin Unbuffered 33,554,432 x 64 bit Organization DDR MICRODIMM Modules ■ Utilizes High Performance 32M x 8 DDR SDRAM in SOC Packages ■ Single +2.5V ± 0.2V Power Supply


    Original     		V826632M24SA DDR400 PDF

    TA7614

    Abstract: Stealth
    Text: 76143P3, 76143S3S Data Sheet 75A, 30V, 0.0055 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Title UF7 43P UF76 3S3 bt A, V, 055 m, an, gic vel raF wer OSTs utho eyrds ter- These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This


    Original     		HUF76143P3, HUF76143S3S TA7614 Stealth PDF

    MX-38T

    Abstract: TC571000 BM11157 TMP88PS76F
    Text: TO SH IB A TMP88PS76 CMOS 8-Bit Microcontroller TMP88PS76F The TMP88PS76 are the high-speed and high performance 8-bit single chip microcomputers which built in a program storage area 64 Kbyte and the One-Time PROM of bector table storage area (256 byte). The


    OCR Scan     		TMP88PS76 TMP88PS76F TMP88PS76 TMP88CP76/S76. TC571000 TMP88PS76F P-QFP80-1420-0 MX-38T BM11157 PDF

    thyristor TAG 8506

    Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
    Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y


    OCR Scan     		11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719 PDF

    ENN7614

    Abstract: 2SC5967 76142
    Text: Ordering number : ENN7614 2SC5967 NPN Triple Diffused Planar Silicon Transistor 2SC5967 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • High-speed. High breakdown voltage VCBO=1700V . High reliability (Adoption of HVP process).


    Original     		ENN7614 2SC5967 2048B 2SC5967] ENN7614 2SC5967 76142 PDF

    2sc5967

    Abstract: 76141 free download transistor data sheet 2sc5967 transistor 2SC5967
    Text: Ordering number : ENN7614 2SC5967 NPN Triple Diffused Planar Silicon Transistor 2SC5967 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • High-speed. High breakdown voltage VCBO=1700V . High reliability (Adoption of HVP process).


    Original     		ENN7614 2SC5967 2048B 2SC5967] 2sc5967 76141 free download transistor data sheet 2sc5967 transistor 2SC5967 PDF

    76143P

    Abstract: 76143s TA7614 HUF76143S3S HUF76143S3ST AN9321 AN9322 HUF76143P3 TB334
    Text: 76143P3, 76143S3S Data Sheet 75A, 30V, 0.0055 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF76143P3, HUF76143S3S 76143P 76143s TA7614 HUF76143S3S HUF76143S3ST AN9321 AN9322 HUF76143P3 TB334 PDF

    case MARKING A1

    Abstract: 76143 f6 diode marking f6 design ideas diode MARKING A1 marking BY marking d6 circular connector
    Text: EPIC CIRCON LS1 EPIC® CIRCON LS 1 – Power Circular Connector – with: For further information, please send us an e-mail to contact@contactconnectors.de ➜ Protection class: IP 68 5 bar ➜ Unique marking system: a) by means of coloured marking clips or alternatively


    Original     		99999LSE case MARKING A1 76143 f6 diode marking f6 design ideas diode MARKING A1 marking BY marking d6 circular connector PDF

    76143P

    Abstract: 76143S Li ION spice model charge TA76143
    Text: 76143P3, 76143S3, 76143S3S Semiconductor November 1998 Data Sheet 75A, 30 V, 0.0055 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    OCR Scan     		HUF76143P3, HUF76143S3, HUF76143S3S O-263AB 330mm 100mm EIA-481 76143P 76143S Li ION spice model charge TA76143 PDF