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onsemi HUFA76413DK8T MOSFET 2N-CH 60V 5.1A 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HUFA76413DK8T	Digi-Reel			1	1 $1.24 10 $1.24 100 $1.24 1000 $1.24 10000 $1.24	Buy Now
	HUFA76413DK8T	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	HUFA76413DK8T	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi HUFA76413DK8T-F085 MOSFET 2N-CH 60V 5.1A 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HUFA76413DK8T-F085	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi HUFA76413DK8T-F085P MOSFET 2N-CH 60V 5.1A 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HUFA76413DK8T-F085P	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi HUFA76413DK8T_F085 60V,4.8A,56 Ohm, Nch, logic Level Ultrafet Power Mosfet/Tape Reel \|Onsemi HUFA76413DK8T_F085
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	HUFA76413DK8T_F085	Reel			2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Fairchild Semiconductor Corporation HUFA76413DK8T
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	HUFA76413DK8T		1,481			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	HUFA76413DK8T		30		1	1 $0.6717 10 $0.6717 100 $0.6314 1000 $0.5709 10000 $0.5709	Buy Now

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76413DK8 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
76413DK8 Abstract: MARKING 59E HUFA76413DK8 HUFA76413DK8T Text: 76413DK8 N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mΩ General Description These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy	Original	HUFA76413DK8 76413DK8 MARKING 59E HUFA76413DK8 HUFA76413DK8T	PDF
HUFA76413DK8T Abstract: No abstract text available Text: 76413DK8T N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mΩ General Description These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy	Original	HUFA76413DK8T HUFA76413DK8T	PDF
Untitled Abstract: No abstract text available Text: 76413DK8T N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mΩ General Description These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy	Original	HUFA76413DK8T	PDF
Untitled Abstract: No abstract text available Text: 76413DK8T_F085 N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mΩ General Description These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy	Original	HUFA76413DK8T	PDF
76413DK8 Abstract: No abstract text available Text: 76413DK8T_F085 N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mΩ General Description These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy	Original	HUFA76413DK8T 76413DK8	PDF
76413DK8 Abstract: HUFA76413DK8T Text: 76413DK8T N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mΩ General Description These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy	Original	HUFA76413DK8T 76413DK8 HUFA76413DK8T	PDF
3kv 27k Abstract: schematic diagram lcd monitor advance 17 27k 3kv 32 inch LCD TV SCHEMATIC efd2124 circuit diagram tv monitor lcd advance capacitor 27k 3kv capacitor c1 220uF 3kv fuse lcd inverter board schematic Text: FAN7313 LCD Backlight Inverter Drive IC Features Description High-Efficiency Single-Stage Power Conversion FAN7313 provides all the control functions for a series parallel resonant converter as well as a pulse width modulation PWM controller to develop a supply voltage.	Original	FAN7313 20-Pin FAN7313 30kHz 250kHz, 3kv 27k schematic diagram lcd monitor advance 17 27k 3kv 32 inch LCD TV SCHEMATIC efd2124 circuit diagram tv monitor lcd advance capacitor 27k 3kv capacitor c1 220uF 3kv fuse lcd inverter board schematic	PDF
Untitled Abstract: No abstract text available Text: 76413DK8T_F085 N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mΩ General Description These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy	Original	HUFA76413DK8T	PDF