RA45H7687M1
Abstract: RA45H8994M1 AN-900-027-B
Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-027-B Date : 10th May. 2007 Rev. date : 30th Jun. 2010 Prepared : K. Mori Confirmed : S.Kametani Taking charge of Silicon RF by Miyoshi Electronics SUBJECT: AM-AM, AM-PM and Vgg2-PM for RA45H8994M1 and RA45H7687M1
|
Original
|
AN-900-027-B
RA45H8994M1
RA45H7687M1
RA45H8994M1/7687M1
50ohm,
06XXA
835MHz
RA45H7687M1
AN-900-027-B
|
PDF
|
RA20H8087M
Abstract: RF MOSFET MODULE RA20H8087M-101 F8068
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8087M RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 806- to
|
Original
|
RA20H8087M
806-870MHz
RA20H8087M
20-watt
870-MHz
RF MOSFET MODULE
RA20H8087M-101
F8068
|
PDF
|
341V
Abstract: RA45H7687M1 22an VGG13
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-026-A Date : 21st Feb. 2007 Rev.date : 7thJan. 2010 Prepared : K. Mori Confirmed : S. Kametani Taking charge of Silicon RF by Miyoshi Electronics SUBJECT: Recommendation of the output power control
|
Original
|
AN-900-026-A
RA45H7687M1
RA45H7687M1,
RA45H7687M1
806MHz
20dBm
341V
22an
VGG13
|
PDF
|
TB203
Abstract: LP801
Text: Gain vs. Freq TB203 LP801 Vds=28Vdc Idq=0.5A 20 Gain in dB 15 Gain 10 Pout fixed at 17dBm 5 470 490 510 530 550 570 590 610 630 650 670 690 710 730 750 770 Freq in MHz Gain vs. Freq TB203 LP801 Vds=28Vdc Idq=1A 20 Gain in dB 15 Gain 10 Pout fixed at 17dBm
|
Original
|
TB203
LP801
28Vdc
17dBm
|
PDF
|
RA20H8087M
Abstract: RA20H8087M-01 RA20H8087M-E01
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8087M 806-825/ 851-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 806- to 870-MHz
|
Original
|
RA20H8087M
851-870MHz
RA20H8087M
20-watt
870-MHz
becom-2-2833-9793
RA20H8087M-01
RA20H8087M-E01
|
PDF
|
DEA202450BT-1261A2
Abstract: DEA202450BT-2038A1 DEA202450BT-1213C1 DEA202450BT-1283A2 DEA202441BT-2106A2 DEA202450BT-1275A1 DEA202450BT-3201B2 3717d
Text: Multilayer Band Pass Filters For 2.4GHz W-LAN/Bluetooth DEA Series Type: DEA202450BT-1261A2 2.0x1.25×0.55mm DEA202441BT-2106A2 (2.0×1.25×0.7mm max.) DEA202450BT-3201B2 (2.0×1.25×0.8mm max.) DEA202450BT-1213C1 (2.0×1.25×0.95mm) DEA202450BT-1275A1 (2.0×1.25×0.95mm)
|
Original
|
DEA202450BT-1261A2
DEA202441BT-2106A2
DEA202450BT-3201B2
DEA202450BT-1213C1
DEA202450BT-1275A1
DEA202450BT-2038A1
DEA202450BT-1283A2
2002/95/EC,
1600MHz
3200MHz
DEA202450BT-1261A2
DEA202450BT-2038A1
DEA202450BT-1213C1
DEA202450BT-1283A2
DEA202441BT-2106A2
DEA202450BT-1275A1
DEA202450BT-3201B2
3717d
|
PDF
|
RA45H7687M1
Abstract: mitsubishi rf sirf 1v GG13
Text: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-900-026 Date : 21st Feb. 2007 Prepared : K. Mori Confirmed : S. Kametani Taking charge of SiRF by Miyoshi Electronics SUBJECT: Recommendation of the output power control for RA45H7687M1
|
Original
|
AN-900-026
RA45H7687M1
RA45H7687M1,
RA45H7687M1
20dBm
AN-900-026
806MHz
mitsubishi rf
sirf 1v
GG13
|
PDF
|
RA20H8087M
Abstract: RA20H8087M-01 20W power transistor
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8087M 806-825/ 851-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 806- to
|
Original
|
RA20H8087M
851-870MHz
RA20H8087M
20-watt
870-MHz
RA20H8087M-01
20W power transistor
|
PDF
|
3717d
Abstract: DEA202450BT-1283A2 DEA202450BT DEA202450BT-1261A2 092dB DEA202450BT-2038A1
Text: Multilayer Band Pass Filters For 2.4GHz W-LAN/Bluetooth DEA Series Type: DEA202450BT-1261A2 2.0x1.25×0.55mm DEA202441BT-2106A2 (2.0×1.25×0.7mm max.) DEA202450BT-3201B2 (2.0×1.25×0.8mm max.) DEA202450BT-1213C1 (2.0×1.25×0.95mm) DEA202450BT-1275A1 (2.0×1.25×0.95mm)
|
Original
|
DEA202450BT-1261A2
DEA202441BT-2106A2
DEA202450BT-3201B2
DEA202450BT-1213C1
DEA202450BT-1275A1
DEA202450BT-2038A1
DEA202450BT-1283A2
2002/95/EC,
2400MHz
2450MHz
3717d
DEA202450BT-1283A2
DEA202450BT
DEA202450BT-1261A2
092dB
DEA202450BT-2038A1
|
PDF
|
TB204
Abstract: LP802
Text: TB204 24V Performance TB204 LP802 Vds=24V Idq=0.5A Freq MHz Pin (mW) Pout (mW) 470 4.2 100 490 3.9 100 510 3.5 100 Flatness +/0.40 dB 530 550 570 Flatness +/- 3.4 3.4 3.5 0.06 dB 100 100 100 590 610 630 Flatness +/- 3.6 4 4 0.23 dB 100 100 100 650 670 690
|
Original
|
TB204
LP802
470MHz
476MHz
100mW
198mW
400mW
LP802
|
PDF
|
RA20H8087M
Abstract: RA20H8087M-101
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8087M RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 806- to
|
Original
|
RA20H8087M
806-870MHz
RA20H8087M
20-watt
870-MHz
RA20H8087M-101
|
PDF
|
1559MHz
Abstract: 0943D DEA252450BT-2080B 5104db 544db
Text: Multilayer Band Pass Filters For 2.4GHz W-LAN/Bluetooth DEA Series Type: DEA252450BT-2080B2 2.5x2.0×0.9mm DEA252450BT-2024C2 (2.5×2.0×0.9mm) DEA252450BT-2024C5 (2.5×2.0×1.0mm max.) DEA252400BT-2030A1 (2.5×2.0×1.0mm max.) DEA252450BT-2024D4 (2.5×2.0×1.0mm max.)
|
Original
|
DEA252450BT-2080B2
DEA252450BT-2024C2
DEA252450BT-2024C5
DEA252400BT-2030A1
DEA252450BT-2024D4
DEA252450BT-2027A1
DEA252450BT-2031A1
DEA252450BT-2063C1
DEA252450BT-2109C3
DEA252450BT-2037C1
1559MHz
0943D
DEA252450BT-2080B
5104db
544db
|
PDF
|
BAND PASS FILTER
Abstract: RFBPF
Text: Approval sheet RFBPF Series – 2012 0805 - RoHS Compliance MULTILAYER CERAMIC BAND PASS FILTER Halogens Free Product 2.4 GHz ISM Band Working Frequency P/N: RFBPF2012040AHT *Contents in this sheet are subject to change without prior notice. Page 1 of 7 ASC_RFBPF2012040AHT_V04
|
Original
|
RFBPF2012040AHT
RFBPF2012040AHT
11b/g/n,
BAND PASS FILTER
RFBPF
|
PDF
|
Untitled
Abstract: No abstract text available
Text: < Silicon RF Power Modules > RA45H7687M1 RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 763- to 870-MHz range. The battery can be connected directly to the drain of the
|
Original
|
RA45H7687M1
763-870MHz
RA45H7687M1
45-watt
870-MHz
|
PDF
|
|
|
transistor j326
Abstract: PD84010-E a05t DB-84010-860 EXCELDRC35C GRM42-6 102J EEVHB1V100P
Text: DB-84010-860 Evaluation board using PD84010-E for 900 MHz 2-way radio Features • Excellent thermal stability ■ Frequency: 760 - 860 MHz ■ Supply voltage: 7.2 V ■ Output power: 8 W ■ Power gain: 11.3 ± 0.3 dB ■ Efficiency: 53 % - 58 % ■ Load mismatch 20:1
|
Original
|
DB-84010-860
PD84010-E
DB-84010-860
transistor j326
a05t
EXCELDRC35C
GRM42-6
102J
EEVHB1V100P
|
PDF
|
Untitled
Abstract: No abstract text available
Text: <Silicon RF Power Modules > RA20H8087M RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO BLOCK DIAGRAM DESCRIPTION The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 806- to 870-MHz range.
|
Original
|
RA20H8087M
806-870MHz
RA20H8087M
20-watt
870-MHz
|
PDF
|
RA20H8087M
Abstract: RA20H8087M-101 20W power transistor
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8087M RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 806- to
|
Original
|
RA20H8087M
806-870MHz
RA20H8087M
20-watt
870-MHz
RA20H8087M-101
20W power transistor
|
PDF
|
RA45H7687M1
Abstract: No abstract text available
Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-026-B Date : 21st Feb. 2007 Rev.date : 30th Jun. 2010 Prepared : K. Mori Confirmed : S. Kametani Taking charge of Silicon RF by Miyoshi Electronics SUBJECT: Recommendation of the output power control
|
Original
|
AN-900-026-B
RA45H7687M1
RA45H7687M1,
RA45H7687M1
20dBm
806MHz
|
PDF
|
RA45H7687M1
Abstract: RA45H7687M1-101
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H7687M1 RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 763- to
|
Original
|
RA45H7687M1
763-870MHz
RA45H7687M1
45-watt
870-MHz
RA45H7687M1-101
|
PDF
|
ta1294
Abstract: No abstract text available
Text: Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com SAW Filter 915.0MHz Part No: MP03642 Model: TA1294A Rev No: 1 A. MAXIMUM RATING: 1. Input Power Level: 10dBm 2. DC Voltage: 3V
|
Original
|
MP03642
10dBm
928MHz)
702MHz
764MHz
846MHz
1010MHz
ta1294
|
PDF
|
RA45H7687M1
Abstract: RA45H8994M1 PIN3D mitsubishi Lot No
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-027-A Date : 10th May. 2007 Rev. date : 7th Jan. 2010 Prepared : K. Mori Confirmed : S.Kametani Taking charge of Silicon RF by Miyoshi Electronics SUBJECT: AM-AM, AM-PM and Vgg2-PM for RA45H8994M1 and RA45H7687M1
|
Original
|
AN-900-027-A
RA45H8994M1
RA45H7687M1
RA45H8994M1/7687M1
50ohm,
06XXA
835MHz
RA45H7687M1
PIN3D
mitsubishi Lot No
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1/2 Multilayer Chip Band Pass Filters For 2.4GHz W-LAN/Bluetooth Conformity to RoHS Directive DEA Series DEA202450BT-2135E2 SHAPES AND DIMENSIONS RECOMMENDED PC BOARD PATTERNS 2.6 0.95±0.05 2.0±0.15 1.7 0.55 1.5 0.35 2 1.6±0.15 0.25±0.20 Terminal functions
|
Original
|
DEA202450BT-2135E2
108MHz]
240MHz]
698MHz]
764MHz]
794MHz]
849MHdB
960MHz
2110MHz
2170MHz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1/2 Multilayer Chip Band Pass Filters For Bluetooth & 2.4GHz W-LAN Conformity to RoHS Directive DEA Series DEA202441BT-2106A2 SHAPES AND DIMENSIONS 0.35 0.75 0.25±0.2 Terminal functions 1 IN 2 OUT 3 GND 4 GND 1.85 3 1.6±0.15 1.5 0.25±0.2 2 2.6 1.7 1.25±0.15
|
Original
|
DEA202441BT-2106A2
110GHz
170GHz
800GHz
960GHz
200GHz
4505GHz
400GHz
450GHz
484GHz
|
PDF
|
mitsubishi Lot No
Abstract: AN-900-027 RA45H7687M1 RA45H8994M1 MITSUBISHI APPLICATION NOTE RF POWER
Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-027 Date : 10th May. 2007 Prepared : K. Mori Confirmed : S.Kametani Taking charge of SiRF by Miyoshi Electronics SUBJECT: AM-AM, AM-PM and Vgg2-PM for RA45H8994M1 and RA45H7687M1 GENERAL:
|
Original
|
AN-900-027
RA45H8994M1
RA45H7687M1
RA45H8994M1/7687M1
50ohm,
06XXA
835MHz
mitsubishi Lot No
AN-900-027
RA45H7687M1
MITSUBISHI APPLICATION NOTE RF POWER
|
PDF
|
