Untitled
Abstract: No abstract text available
Text: RCJ081N20 Nch 200V 8.0A Power MOSFET Datasheet lOutline VDSS 200V RDS on (Max.) 770mW ID 8.0A PD 40W lFeatures (2) LPT(S) (SC-83) (1) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.
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RCJ081N20
770mW
SC-83)
R1120A
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Untitled
Abstract: No abstract text available
Text: RCJ081N20 RCJ081N20 Datasheet Nch 200V 8.0A Power MOSFET lOutline VDSS 200V RDS on (Max.) 770mW ID 8.0A PD 40W lFeatures (2) LPT(S) (SC-83) (1) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.
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RCJ081N20
770mW
SC-83)
R1120A
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Untitled
Abstract: No abstract text available
Text: RCJ081N20 Datasheet Nch 200V 8.0A Power MOSFET lOutline VDSS 200V RDS on (Max.) 770mW ID 8.0A PD 40W lFeatures (2) LPT(S) (SC-83) (1) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.
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RCJ081N20
770mW
SC-83)
R1120A
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Untitled
Abstract: No abstract text available
Text: RCX081N20 RCX081N20 Datasheet Nch 200V 8.0A Power MOSFET lOutline VDSS 200V RDS on (Max.) 770mW ID 8.0A PD 40W lFeatures TO-220FM (1) (2) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.
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RCX081N20
770mW
O-220FM
R1120A
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Untitled
Abstract: No abstract text available
Text: RCX081N20 Datasheet Nch 200V 8.0A Power MOSFET lOutline VDSS 200V RDS on (Max.) 770mW ID 8.0A PD 40W lFeatures TO-220FM (1) (2) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.
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RCX081N20
770mW
O-220FM
R1120A
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PDF
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Untitled
Abstract: No abstract text available
Text: RCJ081N20 Nch 200V 8.0A Power MOSFET Datasheet lOutline VDSS 200V RDS on (Max.) 770mW ID 8.0A PD 40W lFeatures (2) LPT(S) (SC-83) (1) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.
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RCJ081N20
770mW
SC-83)
R1120A
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PDF
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Untitled
Abstract: No abstract text available
Text: RCX081N20 Nch 200V 8.0A Power MOSFET Datasheet lOutline VDSS 200V RDS on (Max.) 770mW ID 8.0A PD 40W lFeatures TO-220FM (1) (2) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.
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RCX081N20
770mW
O-220FM
R1120A
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DRV1100
Abstract: DRV1100P DRV1100U OPA2650 OPA26
Text: DRV1100 DR OPVA1100 658 DRV 110 HIGH POWER DIFFERENTIAL DRIVER AMPLIFIER FEATURES DESCRIPTION ● ● ● ● The DRV1100 is fixed gain differential line driver designed for very low harmonic distortion at the high powers required of xDSL line interface standards.
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DRV1100
OPV1100
DRV1100
230mA
17dBm
230mA
DRV1100P
DRV1100U
OPA2650
OPA26
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848C
Abstract: No abstract text available
Text: X RP 4 3 1 L Precision Adjustable Shunt Regulator September 2010 Rev. 1.2.0 GENERAL DESCRIPTION APPLICATIONS The XRP431L is a three-terminal adjustable shunt voltage regulator providing a highly accurate bandgap reference. The XRP431L acts as an open-loop error
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XRP431L
100mA
848C
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Untitled
Abstract: No abstract text available
Text: DRV1100 DR OPVA1100 658 DRV 110 HIGH POWER DIFFERENTIAL DRIVER AMPLIFIER FEATURES DESCRIPTION ● ● ● ● The DRV1100 is fixed gain differential line driver designed for very low harmonic distortion at the high powers required of xDSL line interface standards.
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DRV1100
230mA
72dBc
100kHz,
DRV1100
17dBm
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Untitled
Abstract: No abstract text available
Text: DRAFT RF3315 DRAFT RF3315Broadband High Linearity Amplifier BROADBAND HIGH LINEARITY AMPLIFIER GND RoHS Compliant & Pb-Free Product Package Style: SOT89 Features +40dBm Output IP3 12.5dB Gain at 2.0GHz +23dBm P1dB 3.0dB Typical Noise Figure at
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RF3315Broadband
RF3315
300MHz
40dBm
23dBm
DS050318
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TLC5960
Abstract: No abstract text available
Text: TLC5960 www.ti.com SBVS147 – SEPTEMBER 2010 Eight-Channel LED Driver with Intelligent Headroom Voltage Monitor iHVM Check for Samples: TLC5960 FEATURES • 1 • • 23 • • • • • • 250kHz PWM Dimming Four Intelligent Headroom Voltage Monitor
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TLC5960
SBVS147
250kHz
38-Pin
TLC5960
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YDA165
Abstract: Yamaha YDA Y165 yamaha yamaha audio power amp circuits Y165 c20z3 noise gate YDA165-PZ LSI-4DA165A20 PD85
Text: YDA165 D-4HP3 MONO 3.3W Non-Clip DIGITAL AUDIO POWER AMPLIFIER • Overview YDA165 is a one-chip audio subsystem that integrates a ● Speaker Amplifier Class-D monaural loudspeaker amplifier and a stereo headphone ・Max. Output 3.3W (5.0V, 4Ω, THD+N=10%)
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YDA165
YDA165
1000mW
4DA165A20
Yamaha YDA
Y165 yamaha
yamaha audio power amp circuits
Y165
c20z3
noise gate
YDA165-PZ
LSI-4DA165A20
PD85
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PDF
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LPO3310-222MX
Abstract: LM3674 LM3674MF-ADJ LM3674MFX-ADJ MF05A
Text: LM3674 2MHz, 600mA Step-Down DC-DC Converter in SOT 23-5 General Description Features The LM3674 step-down DC-DC converter is optimized for powering low voltage circuits from a single Li-Ion cell battery and input voltage rails from 2.7V to 5.5V. It provides up to
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LM3674
600mA
LM3674
CSP-9-111S2.
LPO3310-222MX
LM3674MF-ADJ
LM3674MFX-ADJ
MF05A
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V13max
Abstract: NTE7004
Text: NTE7004 Integrated Circuit Electronic Channel Select System Control Description: The NTE7004 contains CPU/PLL–excluded peripheral circuits such as band switch, +5V power supply with RST , sync detector, low–pass filter for color TV/VCR frequency synthesizer channel select
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NTE7004
NTE7004
V13max
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ic 7206
Abstract: 2661 P28-1 PACKAGE DIAGRAM IDT7203 IDT7204 IDT7205 IDT7206 IDT720X P28-2 L 7206
Text: CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 IDT7203 IDT7204 IDT7205 IDT7206 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • • The IDT7203/7204/7205/7206 are dual-port memory buffers with internal pointers that load and empty data on a firstin/first-out basis. The device uses Full and Empty flags to
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IDT7203
IDT7204
IDT7205
IDT7206
IDT7203/7204/7205/7206
MIL-STD-883,
7203/04DB
ic 7206
2661
P28-1 PACKAGE DIAGRAM
IDT7203
IDT7204
IDT7205
IDT7206
IDT720X
P28-2
L 7206
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idt7201A
Abstract: 7201la35 7202LA15 high level block diagram for asynchronous FIFO IDT7200 IDT7200L IDT7201 IDT7201LA IDT7202 IDT7202LA
Text: IDT7200L IDT7201LA IDT7202LA CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 Integrated Device Technology, Inc. FEATURES: • • • • • • • • • • • • • • First-In/First-Out dual-port memory 256 x 9 organization IDT7200 512 x 9 organization (IDT7201)
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IDT7200L
IDT7201LA
IDT7202LA
IDT7200)
IDT7201)
IDT7202)
770mW
speed--12ns
MIL-STD-883,
idt7201A
7201la35
7202LA15
high level block diagram for asynchronous FIFO
IDT7200
IDT7200L
IDT7201
IDT7201LA
IDT7202
IDT7202LA
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la30 equivalent
Abstract: No abstract text available
Text: gar's < */ Integrated Device Technology, Inc. CMOS PARALLEL FIRST-IN/FIRST-OUT FIFO 1024 x 9-BIT IDT7202SA/LA FEATURES: DESCRIPTION: • First-In/First-Out dual-port memory • 1024 x 9 organization • Low power consumption — Active: 770mW(Max. — Power-down: 27.5mW(Max.)
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IDT7202SA/LA
770mW
MIL-STD-883,
IDT7202A
IDT7202SA/LA
la30 equivalent
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PDF
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transistor sl 431
Abstract: ZIP40-P-475
Text: O K I Sem iconductor M S M 5 1 4 1 9 0 / S L _ 262,144-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514190/SL is a new generation Dynamic RAM organized as 262,144-word x 18-bit configuration. The technology used to fabricate theMSM51419 0 /SL is OKI's CMOS silicon gate process technology.
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MSM514190/SL_
144-Word
18-Bit
MSM514190/SL
theMSM514190/SL
cycles/16ms,
transistor sl 431
ZIP40-P-475
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TC514256AJ
Abstract: TC514256
Text: 262,144 W O R D S x 8 BIT D Y N A M IC RAM PRELIMINARY M ODULE DESCRIPTION The THM82500AS is a 262,144 words by 8 bits dynamic RAM module which assembled 2 pcs of TC514256AJ on the printed circuit board. The THM82500AS is optimized for application to the systems which are required high density and large capacity such as m ain memory of the computers
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THM82500AS
TC514256AJ
144words
THM825000
AS-70
130ns
THM825Q0
150ns
TC514256
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Untitled
Abstract: No abstract text available
Text: "HYUNDAI HYM532220A W-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532220A is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of four HY5118160B in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mourtted for
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HYM532220A
32-bit
HY5118160B
HYM532220AW/SLW/TW/SLTW
HYM532220AWG/SLWG
880mW
825mW
70MIN.
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7006C
Abstract: TOA8
Text: '- / Ú - FUJITSU S3E L TD 3 7 4 cl75b G D 0 3 3 S S D .2 3 ^ /7 TOb » F C A J June 1992 Edition 1.0 FUJITSU DATA SHEET M B 8 1 4 2 6 0 A -70/-80/-10 CMOS 256K X 16 BIT FAST PAGE MODE DYNAMIC RAM CMOS 262,144 x 16 bit Fast Page Mode Dynamic RAM The Fujitsu MB814260A is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304
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MB814260A
16-bit
16-bits
MB814260A-70/-80/-10
7006C
TOA8
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PDF
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f 7205
Abstract: L 7206 ta 7205
Text: |efty In te g rate d DevIc e Technology, Inc. CMOS PARALLEL FIRST-IN/FIRST-OUT FIFO 2048 x 9-BIT, 4096 x 9-BIT, 8192 x 9-BIT & 16384 x 9-BIT IDT7203 IDT7204 IDT7205 IDT7206 FEATURES: DESCRIPTION: • • • • • • • The IDT7203/7204/7205/7206 are dual-port memories buff
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IDT7203
IDT7204
IDT7205
IDT7206
IDT7203)
IDT7204)
IDT7205)
IDT7206)
770mW
IDT720X
f 7205
L 7206
ta 7205
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PDF
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HY5118160
Abstract: HY5118160C
Text: » M Y U H D A I * HY5118160C,HY5116160C > 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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HY5118160C
HY5116160C
1Mx16,
16-bit
A0-A11)
DQ0-DQ15)
HY5118160
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