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Text: Product specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION BUK464-200A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in
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BUK464-200A
SQT404
777ali
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Untitled
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Text: N AMER P H I L I P S / D I S C R E T E 55E D ooso4fls ? BUK455-50A BUK455-50B PowerMOS transistor r-s ^ -/3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUK455-50A
BUK455-50B
BUK455
bbS3T31
777ali
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Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b lE D ^ 5 3 1 3 1 D0307,:iD 3Tfi « A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.
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D0307,
T0220AB
BUK553-60A/B
BUK553
777ali
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b'lE P • bb 5 3 R 31 0 0 3 0 6 1 3 3 T6 « A P X Philips Semiconductors Product Specification PowerMOS transistor BUK555-200A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode
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BUK555-200A/B
O220AB
BUK555
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