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    Analog Devices Inc

    Analog Devices Inc AD8479BRZ

    IC OPAMP GP 1 CIRCUIT 8SOIC
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    DigiKey AD8479BRZ Tube 293 1
    • 1 $13.74
    • 10 $9.519
    • 100 $7.1901
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    Mouser Electronics AD8479BRZ 36
    • 1 $14.37
    • 10 $10.92
    • 100 $7.27
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    Newark AD8479BRZ Bulk 161 1
    • 1 $16.81
    • 10 $14.39
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    Analog Devices Inc AD8479BRZ 157
    • 1 $13.74
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    Richardson RFPD AD8479BRZ 98
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    Win Source Electronics AD8479BRZ 2,500
    • 1 $52.813
    • 10 $35.209
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    Analog Devices Inc AD8079BRZ

    IC BUFFER 2 CIRCUIT 8SOIC
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    DigiKey AD8079BRZ Tube 135 1
    • 1 $17.01
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    Analog Devices Inc AD8079BRZ 615
    • 1 $17.01
    • 10 $11.948
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    Rochester Electronics AD8079BRZ 3,151 1
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    • 100 $9.25
    • 1000 $8.28
    • 10000 $7.79
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    Analog Devices Inc AD8279BRZ

    IC OPAMP DIFF 2 CIRCUIT 14SOIC
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    DigiKey AD8279BRZ Tube 90 1
    • 1 $8.71
    • 10 $5.861
    • 100 $4.59482
    • 1000 $3.8
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    Mouser Electronics AD8279BRZ 1,968
    • 1 $8.71
    • 10 $5.86
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    Newark AD8279BRZ Bulk 165 1
    • 1 $7.31
    • 10 $6.28
    • 100 $4.61
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    Analog Devices Inc AD8279BRZ 2,202
    • 1 $7.43
    • 10 $5.861
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    Vyrian AD8279BRZ 380
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    Analog Devices Inc AD8079BR-REEL

    IC BUFFER 2 CIRCUIT 8SOIC
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    DigiKey AD8079BR-REEL Reel
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    Rochester Electronics AD8079BR-REEL 5,000 1
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    Vyrian AD8079BR-REEL 4,962
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    Analog Devices Inc AD8079BRZ-REEL

    IC BUFFER 2 CIRCUIT 8SOIC
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    DigiKey AD8079BRZ-REEL Reel 2,500
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    Analog Devices Inc AD8079BRZ-REEL 2,500 2,500
    • 1 $18.18
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    • 100 $18.18
    • 1000 $7.3
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    79BR Datasheets Context Search

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    memoire

    Abstract: RAM EDAC SEU 350Krad
    Contextual Info: 0.6µm CMOS TECHNOLOGY WITH RADIATION TOLERANT FEATURES APPLICATION TO 8Kx16 DUAL PORT RAM and SEA of GATES TECHNOLOGIE CMOS 0.6µm TOLERANTE AUX RADIATIONS APPLICATION A LA MEMOIRE DOUBLE ACCES 8Kx16 ET AUX MERS DE PORTES by Thierry CORBIERE, Valerie LASSERE, Bruno THOMAS, Saïd HACHAD 1


    Original     		8Kx16 memoire RAM EDAC SEU 350Krad PDF

    krad

    Abstract: 67025E TM1019 RAM SEU
    Contextual Info: DPR SCMOS2 Technology Dual Port RAM 8K16 Tolerance to Radiation Abstract This paper proposes a review of the data gathered during radiation testing for the 8Kx16 dual port RAM manufactured using the Radiation Tolerant version of the 0.6µm SCMOS2/2 technology. Both Upset sensitivity


    Original     		8Kx16 50Krad 10Krad 35Krad NT94055, 9849/92/NL, krad 67025E TM1019 RAM SEU PDF

    03E1

    Abstract: 00CF ISD33000 b0334 04D5
    Contextual Info:                                                    ""###    $  


    Original     		PDF

    LED DRIVER ana 618

    Abstract: isd1400 application ISD1420 ISD2560 ISD2500 isd1420 addressing Information Storage Devices ISD1500 LM386 speaker ISD1110
    Contextual Info: ISD1200 Series ISD1400 Series ISD1500 Series ISD2500 Series ISD33000 Series                                                                


    Original     		ISD1200 ISD1400 ISD1500 ISD2500 ISD33000 ISD4003 ISD1100 ISD4002 ISD1000A LED DRIVER ana 618 isd1400 application ISD1420 ISD2560 isd1420 addressing Information Storage Devices LM386 speaker ISD1110 PDF

    45420

    Abstract: SN10 TM1019 SRAM Cross References RAM SEU
    Contextual Info: SCMOS2 SCMOS2 Technology MG1RT Sea of Gates Family – Tolerance to Radiation 1. Abstract This paper proposes a review of the data gathered during radiation testing for the MG1RT sea of gates family manufactured using the Radiation Tolerant version of the


    Original     		NT94055, 9849/92/NL, 45420 SN10 TM1019 SRAM Cross References RAM SEU PDF

    VLSI Technology

    Abstract: "vlsi technology" abstract "vlsi technology" abstract for 35CL inverter grade SCR solar 4V led RADEC
    Contextual Info: Hardening a CMOS Technology Against Total Dose and Heavy Ion Induced Latch–up by Thierry CORBIERE, Valerie LASSERE, Bruno THOMAS, Said HACHAD 1 Robert ECOFFET(2), Sophie DUZELLIER(3) (1) MATRA MHS, NANTES (F) (2) CNES, TOULOUSE (F) (3) CERT/DERTS, TOULOUSE (F)


    Original     		PDF

    "vlsi technology" abstract for

    Abstract: "vlsi technology" abstract
    Contextual Info: Hardening CMOS Hardening a CMOS Technology Against Total Dose and Heavy Ion Induced Latch–up by Thierry CORBIERE, Valerie LASSERE, Bruno THOMAS, Said HACHAD 1 Robert ECOFFET(2), Sophie DUZELLIER(3) (1) MATRA MHS, NANTES (F) (2) CNES, TOULOUSE (F) (3) CERT/DERTS, TOULOUSE (F)


    Original     		PDF

    EHR96135

    Abstract: 100KRAD TM1019 EHR96
    Contextual Info: Evaluation Report SCMOS2 Radiation Tolerant Technology MG1RT Sea of Gates Family - Tolerance to Radiation by Thierry CORBIERE 1 Work partially funded by French Space Agency [1] Abstract This paper proposes a review of the data gathered during radiation testing for the MG1RT sea of gates


    Original     		NT94055, 9849/92/NL, EHR96135 Oct-96 100KRAD TM1019 EHR96 PDF

    108 046f

    Abstract: 03e1 046F 044f 03C24 b 0334 046b
    Contextual Info:                                !                     %           &


    Original     		06K0B 108 046f 03e1 046F 044f 03C24 b 0334 046b PDF

    Dose

    Abstract: TM1019 Single Supply Operation cross SCC22900
    Contextual Info: SCMOS1/2 SCMOS1/2 Technology FIFO Family up to 72Kbit – Tolerance to Radiation 1. Abstract This paper proposes a review of the data gathered during heavy ion testing for the First In First Out RAM manufactured using the Radiation Tolerant version of the


    Original     		72Kbit) 50Krad 35Krad EHR95056, 9849/92/NL, 11Mars Dose TM1019 Single Supply Operation cross SCC22900 PDF

    35CL

    Abstract: TM1019 79br
    Contextual Info: Evaluation Report SCMOS1/2 Radiation Tolerant Technology FIFO Family up to 72Kbit Tolerance to Radiation by Thierry CORBIERE (1) Work partially funded by French Space Agency [1] Abstract This paper proposes a review of the data gathered during heavy ion testing for the First In First Out


    Original     		72Kbit) 50Krad 35Krad january92 EHR95056, 9849/92/NL, 35CL TM1019 79br PDF

    8Kx16

    Abstract: TM1019
    Contextual Info: Evaluation Report SCMOS2 Radiation Tolerant Technology Dual Port RAM 8Kx16 Tolerance to Radiation by Thierry CORBIERE 1 Work partially funded by French Space Agency [1] Abstract This paper proposes a review of the data gathered during radiation testing for the 8Kx16 dual port


    Original     		8Kx16 NT94055, 9849/92/NL, TM1019 PDF