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    ZVN3320F

    Abstract: No abstract text available
    Text: PLESSEY SENICOND/DISCRETE "□3 7220533 PLESSEY SEMICOND/DISCRETE DE~| 7SE0S33 DDDb744 T 03E 06744 N-channel enhancement mode vertical DMOS FET D ZVN3320F ABSO LUTE M A X IM U M RATINGS Param eter S O T-23 Sym bol D rain-source vo lta g e VDs C o n tin u ou s drain c u rre n t at T A = 2 5 °C


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    7SE0S33 DDDb744 ZVN3320F 3320F ZVN3320F PDF

    Untitled

    Abstract: No abstract text available
    Text: TS PLESSEY SEMICOND/DISCRETE dF | 7SE0S33 DDG4TSb 95D 04956 7220533 PL ES SE Y SEMICOND/DISCRETE 3 3 '0/ MAXIVOLT SERIES TABLE 8-N P N M U LTI-EPITAXIAL DOUBLE DIFFUSED POWER SWITCHING TRANSISTORS The devices shown in this table are specially designed for off-line switching power supplies, converters


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    7SE0S33 T0-220 O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: PLESSEY SEMICOND/DISCRETE :r 03 DE 1 7 B 2 0 5 3 3 □ OGbL.lb T '- BC846 BC848 BC850 NPN silicon planar general purpose transistors -2. f - f S BC847 BC849 ABSOLUTE MAXIMUM RATINGS Symbol BC846 BC847 BC848 BC849 BC850 Parameter Collector-base voltage Unit


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    BC846 BC848 BC850 BC847 BC849 BC849 BC850 PDF

    g229

    Abstract: ZVN3306B
    Text: PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY TS SEMICOND/ DISCRETE De J ? 2 S D S 3 3 95D 05727 N-channel enhancement mode vertical D M O S FET FEATU RES • Com pact geometry • Fast sw itching speeds • No secondary breakdown • Excellent temperature stability


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    ZVN3306A ZVN3306B ZVN3306F 0D0S727 G-233 7520S33 G-234 G-235 725DS33 DDD5734 g229 PDF