ZVN3320F
Abstract: No abstract text available
Text: PLESSEY SENICOND/DISCRETE "□3 7220533 PLESSEY SEMICOND/DISCRETE DE~| 7SE0S33 DDDb744 T 03E 06744 N-channel enhancement mode vertical DMOS FET D ZVN3320F ABSO LUTE M A X IM U M RATINGS Param eter S O T-23 Sym bol D rain-source vo lta g e VDs C o n tin u ou s drain c u rre n t at T A = 2 5 °C
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7SE0S33
DDDb744
ZVN3320F
3320F
ZVN3320F
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Untitled
Abstract: No abstract text available
Text: TS PLESSEY SEMICOND/DISCRETE dF | 7SE0S33 DDG4TSb 95D 04956 7220533 PL ES SE Y SEMICOND/DISCRETE 3 3 '0/ MAXIVOLT SERIES TABLE 8-N P N M U LTI-EPITAXIAL DOUBLE DIFFUSED POWER SWITCHING TRANSISTORS The devices shown in this table are specially designed for off-line switching power supplies, converters
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7SE0S33
T0-220
O-220
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Untitled
Abstract: No abstract text available
Text: PLESSEY SEMICOND/DISCRETE :r 03 DE 1 7 B 2 0 5 3 3 □ OGbL.lb T '- BC846 BC848 BC850 NPN silicon planar general purpose transistors -2. f - f S BC847 BC849 ABSOLUTE MAXIMUM RATINGS Symbol BC846 BC847 BC848 BC849 BC850 Parameter Collector-base voltage Unit
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BC846
BC848
BC850
BC847
BC849
BC849
BC850
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g229
Abstract: ZVN3306B
Text: PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY TS SEMICOND/ DISCRETE De J ? 2 S D S 3 3 95D 05727 N-channel enhancement mode vertical D M O S FET FEATU RES • Com pact geometry • Fast sw itching speeds • No secondary breakdown • Excellent temperature stability
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ZVN3306A
ZVN3306B
ZVN3306F
0D0S727
G-233
7520S33
G-234
G-235
725DS33
DDD5734
g229
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