7C1028 Search Results

Contextual Info: H ig li P e rfo rm a n ce 7C1028 A 7C1028L 256KX4 CMOS SRAM A 2 5 6 K X 4 CMOS SRAM Features • O rg a n iz a tio n : 2 6 2 ,1 4 4 w o rd s x 4 b its • Easy m e m o r y e x p a n sio n w ith CE a n d OE in p u ts • H ig h sp e e d • T T L -c o m p atib le, th re e -s ta te I / O

MSM 6290

Abstract: msm 5562 27c256 intel 62c512 AP 2068 27C512 microchip 62256 57C256 27C512 SGS-THOMSON 27C512-150
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+

AS7C

Contextual Info: H igh Perform ance 256K X 4 CMOS SRAM AS7C.1028 I 2 S 6 K X 4 C M O S SR A M Features • O r g a n iz a tio n : 2 6 2 , 1 4 4 w o r d s x 4 b its 1 T T L - c o m p a tib le , th r e e - s ta te 1 / O • H ig h s p e e d • 2 8 - p i n JEDEC s ta n d a r d p a c k a g e s

AS7C1028-25PC

Abstract: AS7C1028-20JC 28-pin SOJ SRAM AS7C1028 AS7C1028-12TPC 7C1028
Contextual Info: High Performance 256Kx4 CMOS SRAM 7C1028 7C1028L 256K×4 CMOS SRAM Features • Organization: 262,144 words × 4 bits • High speed - 12/15/20/25/35 ns address access time - 4/4/5/6/8 ns output enable access time • Low power consumption - Active: 660 mW max 15 ns cycle

fujitsu uv erasable eprom

Abstract: LA 4108 3129c
Contextual Info: CMOS 1 ,0 4 8 ,5 7 6 BIT UV ERASABLE READ ONLY MEMORY 7C1028-15 7C1028-20 7C1028-25 Septem ber 1988 Edition 1.0 CMOS 1,048,576 BIT UV ERASABLE READ ONLY MEMORY EPROM The Fujitsu 7C1028 EPROM Is a high speed read-only static mem ory th a t Is

27HC642

Abstract: 39C10B PAL22V10APC CY2254SC-1 7132SA70 93L422AM 7024S15 7130SA25 7C198-45C 7006S
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+

Contextual Info: H ig h - P e r f o r m a n c e 256K x4 R I A S 7 C I0 2 H A S7C 102X L C M O S SK AM PRELIM INARY 2 5 6 K x 4 C M O S S R A M C o m m o n I/O I FEATURES • Organization: 262,144 words x 4 bits • Equal access and cycle times • Highspeed • Easy memory expansion with (ÜË and ÜE inputs

NEC D2732

Abstract: 41C1000 41256 81c4256 6264 SRAM 44256 dram NEC 2732 nec 4217400 814400 Texas Instruments eprom 2732
Contextual Info: New Page 1 DRAM ORGANIZATION/ DENSITY FUJISTU GOLDSTAR HITACHI HYNDAI MB GM HM HY 256K x 1 256K 81256 71C256 51256 MICRON MT 53C256 1256 MITSUBISHI M5M 4256 1M x 1(1M) 81C1000 71C1000 511000 531000 4C1024 41000 256K x 4(1M) 81C4256 71C4256 514256 534256 4C4256

Contextual Info: Ilinli l’ c i i aB \S7CIOZ8 A L Sf.Kx I C M < S SK \ M i W i K x l C M O S SK/W1 Features • T T L -c o m p a tib le, th re e -sta te I /O • H ig h sp e e d • 2 8 - p in JEDEC standard p ack ages - 1 2 / 1 5 / 2 0 / 2 5 / 3 5 ns ad d ress a c ce ss tim e

Contextual Info: 256Kx4 Fast SRAM AS7CI028 Features Logic Block Diagram ♦ High Performance CMOS: t^^=12-35 ns ♦ Fast OE access: tQE=4-8 ns ♦ Low power - 660 mW @ 100 MHz - 27.5 mW @ 10 MHz standby - 5.5 mW @ 10 MHz standby: L version ♦ Automatic CE power down ♦ 2V data retention L version