CY7C1006D
Abstract: CY7C106D CY7C106D-10VXI 7C106D
Text: 7C106D CY7C1006D 1-Mbit 256K x 4 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C106B/CY7C1006B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns • Low CMOS standby power — ISB2 = 3.0 mA
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CY7C106D
CY7C1006D
CY7C106B/CY7C1006B
CY7C106D
CY7C1006D
83MHz,
66MHz
40MHz
100MHz,
CY7C106D-10VXI
7C106D
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Untitled
Abstract: No abstract text available
Text: 7C106D CY7C1006D 1-Mbit 256K x 4 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C106B/CY7C1006B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns • Low CMOS standby power — ISB2 = 3.0 mA
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PDF
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CY7C106D
CY7C1006D
CY7C106B/CY7C1006B
CY7C106D
CY7C1006D
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Untitled
Abstract: No abstract text available
Text: 7C106D CY7C1006D PRELIMINARY 1-Mbit 256K x 4 Static RAM Functional Description[1] Features The 7C106D and CY7C1006D are high-performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state
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CY7C106D
CY7C1006D
CY7C106B/CY7C1006B
CY7C1006D
CY7C106D,
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1709 013
Abstract: CY7C1006D CY7C106D CY7C106D-10VXI
Text: 7C106D CY7C1006D 1-Mbit 256K x 4 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C106B/CY7C1006B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns • Low CMOS standby power — ISB2 = 3.0 mA
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CY7C106D
CY7C1006D
CY7C106B/CY7C1006B
CY7C106D
CY7C1006D
83MHz,
66MHz
40MHz
100MHz,
1709 013
CY7C106D-10VXI
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Untitled
Abstract: No abstract text available
Text: 7C106D CY7C1006D 1-Mbit 256K x 4 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C106B/CY7C1006B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns • Low CMOS standby power — ISB2 = 3.0 mA
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Original
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PDF
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CY7C106D
CY7C1006D
CY7C106B/CY7C1006B
CY7C106D
CY7C1006D
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Untitled
Abstract: No abstract text available
Text: 7C106D CY7C1006D 1-Mbit 256K x 4 Static RAM Functional Description[1] Features • Pin- and function-compatible with CY7C106B/CY7C1006B • High speed — tAA = 10 ns • Low active power — ICC = 60 mA @ 10 ns • Low CMOS standby power • • • •
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CY7C106D
CY7C1006D
CY7C106B/CY7C1006B
28-pin
400-Mil
CY7C1006D
300-Mil
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Untitled
Abstract: No abstract text available
Text: 7C106D CY7C1006D 1-Mbit 256 K x 4 Static RAM 1-Mbit (256 K × 4) Static RAM Features • Pin- and function-compatible with CY7C106B/CY7C1006B ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 80 mA @ 10 ns ■ Low CMOS standby power ❐ ISB2 = 3.0 mA
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PDF
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CY7C106D
CY7C1006D
CY7C106B/CY7C1006B
CY7C106D
28-pin
400-Mil
CY7C1006D
300-Mil
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Untitled
Abstract: No abstract text available
Text: 7C106D CY7C1006D 1-Mbit 256 K x 4 Static RAM 1-Mbit (256 K × 4) Static RAM Features • Pin- and function-compatible with CY7C106B/CY7C1006B ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 80 mA @ 10 ns ■ Low CMOS standby power ❐ ISB2 = 3.0 mA
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PDF
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CY7C106D
CY7C1006D
CY7C106B/CY7C1006B
CY7C106D
28-pin
400-Mil
CY7C1006D
300-Mil
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CY7C1006D
Abstract: CY7C106D CY7C106D-10VXI
Text: 7C106D CY7C1006D 1-Mbit 256K x 4 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C106B/CY7C1006B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns • Low CMOS standby power — ISB2 = 3.0 mA
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Original
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PDF
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CY7C106D
CY7C1006D
CY7C106B/CY7C1006B
CY7C106D
CY7C1006D
CY7C106D-10VXI
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