FMMTA43
Abstract: FMMTA42R FMMTA42 FMMTA43R FMMTA92 FMMTA93 FMMT-A42R
Text: FMMTA42 FMMTA43 FMMTA42 FMMTA43 SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTORS ISSUE 3 JANUARY 1996 ✪ PARTMARKING DETAIL FMMTA42 3E FMMTA43 1E FMMTA42R 7E FMMTA43R 5E 160 fT Transition Frequency MHz hFE Static Forward Current Transfer Ratio
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FMMTA42
FMMTA43
FMMTA42R
FMMTA43R
FMMTA92
FMMTA43
FMMTA42R
FMMTA42
FMMTA43R
FMMTA92
FMMTA93
FMMT-A42R
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FMMTA42R
Abstract: FMMTA42 FMMTA92 7e sot23 3E SOT23
Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTORS FMMTA42 ✪ ISSUE 4 – MARCH 2001 PARTMARKING DETAIL – FMMTA42 – FMMTA42R – 3E 7E E C B COMPLEMENTARY TYPES – FMMTA42 – FMMTA92 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL FMMTA42 UNIT Collector-Base Voltage
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FMMTA42
FMMTA42R
FMMTA92
20MHz
FMMTA42R
FMMTA42
FMMTA92
7e sot23
3E SOT23
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Untitled
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMTA42 ISSUE 5 – SEPTEMBER 2007 ✪ PARTMARKING DETAIL – FMMTA42 – FMMTA42R – 3E 7E E C B COMPLEMENTARY TYPES – FMMTA42 – FMMTA92 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL FMMTA42 UNIT Collector-Base Voltage
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FMMTA42
FMMTA42R
FMMTA92
20MHz
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E2p 93 transistor
Abstract: E2p 28 transistor 1 307 329 082 E2p 49 transistor BFS17 BFS17A
Text: Philips Sem iconductors m ^ 5 3 ^ 3 1 □DE5£5c1 TTS BIAPX N AMER PHILIPS/DISCRETE NPN 3 GHz wideband transistor DESCRIPTION fc,7E Product specification J> ^ BFS17A PINNING NPN transistor in a plastic SOT23 envelope. PIN It is intended for a wide range of RF
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BFS17A
E2p 93 transistor
E2p 28 transistor
1 307 329 082
E2p 49 transistor
BFS17
BFS17A
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g21 Transistor
Abstract: PMBTH10 PMBTH81
Text: □□¿SW Philips Semiconductors ESI H A P X Product specification PNP 1 GHz switching transistor ^ ÂI1ER PHILIPS/DISCRETE FEATURES PINNING • Low cost PIN • High transition frequency. PMBTH81 t,7E ]> DESCRIPTION Code: V31 1 base DESCRIPTION 2 emitter
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bbS3T31
PMBTH81
PMBTH10.
PMBTH81
MRAS67
g21 Transistor
PMBTH10
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transistor T43
Abstract: No abstract text available
Text: Philips Semiconductors bbSS'Ol 0024b4fl T43 H A P X N AUER PHILIPS/DISCRETE NPN 1 GHz wideband transistor DESCRIPTION Preliminary specification fc,7E D BF547W PINNING Silicon NPN transistor in a plastic SOT323 S-mini envelope. It is primarily intended as a mixer,
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0024b4fl
BF547W
OT323
BF547W
BF547.
MBC870
OT323.
transistor T43
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Untitled
Abstract: No abstract text available
Text: • bbSa'IBI 0DBS7TS S3fi « A P X N AKER PHILIPS/DISCRETE L.7E D _ _ PMBD 28 35 PMBD 28 36 J SILICON PLANAR EPITAXIAL HIGH SPEED DIODES The PMBD2835 and 2836 consist of two diodes in a microminiature plastic envelope. The anodes are
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PMBD2835
PMBD2835
PMBD2836
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Untitled
Abstract: No abstract text available
Text: • bbS3T31 00BSfl57 bQ5 H A P X N AMER PHILIPS/DISCRETE PMBT2907 PMBT2907A L.7E D _ J SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon transistors, in a microminiature plastic envelope, intended for medium power switching and general purpose amplifier applications in thick and thin-film circuits.
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bbS3T31
00BSfl57
PMBT2907
PMBT2907A
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SOT-23 MARKING T36
Abstract: BSR19 BSR19A BSR20 BSR20A
Text: • 1^53^31 0025560 53b ■ APX N AMER PHILIPS/DISCRE TE BSR20 BSR20A t.7E D SILICON P-N-P HIGH-VOLTAGE TRANSISTORS P-N-P high-voltage small-signal transistors for general purposes and especially in telephony applications and encapsulated in a SOT-23 envelope.
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BSR20
BSR20A
OT-23
BSR19
BSR19A.
BSR20
250mA
SOT-23 MARKING T36
BSR19A
BSR20A
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transistor IC BT 134
Abstract: sot23 a60 PMBT5551
Text: • bbSBTBl 0D25flô2 atD ■ APX N ANER PHILIPS/DISCRETE PMBT5551 t.7E D _ _ _ _ A_ SILICON NPN HIGH-VOLTAGE TRANSISTOR NPN high-voltage small-signal tran sisto r fo r general purposes and especially te le ph o n y applications and encapsulated in a SO T23 envelope.
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PMBT5551
transistor IC BT 134
sot23 a60
PMBT5551
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L7E transistor
Abstract: PMBT2907A PMBT2907 1N916
Text: • 1^53^31 002SÖS7 bD5 H A P X N AUER PHILIPS/DISCRETE PMBT2907 PMBT2907A L.7E D SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon transistors, in a microminiature plastic envelope, intended for medium power switching and general purpose amplifier applications in thick and thin-film circuits.
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PMBT2907
PMBT2907A
PMBT2907
bbS3T31
PMBT2907A
1N916
L7E transistor
1N916
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FMMTA42
Abstract: FMMTA43 FMMTA43R FMMTA92 FMMTA93 FMMT-A42R
Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTORS ISSUE 3 - JANUARY 1996 O_ PARTMARKING D E T A IL- F M M T A 4 2 - 3E FM M TA431E F M M T A 4 2 R - 7E FM M TA43R - 5E FMMTA42 FMMTA43 C O M PLEM EN TARY TYPES - FM M TA42 - FM MTA92 FM M TA43 - FM MTA93
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FMMTA42
FMMTA43
FMMTA42-
FMMTA43-
FMMTA42R-
FMMTA43R
FMMTA92
FMMTA43
FMMTA93
FMMTA92
FMMTA93
FMMT-A42R
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l4p diode
Abstract: mv diode 203 MARKING CODE L4P SOT-23 IP BAT54 h 125 tam
Text: •i bbsa'ìai N AMER □ Q S 4 3 3 cì llfl ■ PHILIPS/DISCRETE APX L 7E BAT54 D SCHOTTKY BARRIER DIODE Silicon epitaxial S chottky barrier diode w ith an integrated p-n junction protection ring in a micro miniature SOT-23 envelope intended fo r surface mounting.
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BAT54
OT-23
OT-23
00243M1
l4p diode
mv diode 203
MARKING CODE L4P
SOT-23 IP
BAT54
h 125 tam
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smd transistor TO4
Abstract: SMD Transistor 7e SMD SOT23 7E to4 smd smd to4 transistor DI 763 2N7002 phi ic87 2N7002 UBB073
Text: • Philips Semiconductors Product specification date of issue April 1991 FEATUR ES • QDsmaa htt « apx N AUER PHILIPS/DISCRETE Data sheet status bbSB'm fc.7E D 2N7002 N-channei vertical D-MOS transistor QUICK R E F E R E N C E DATA Direct interface to C -M O S , TTL,
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2N7002
bb53T31
MCB702
smd transistor TO4
SMD Transistor 7e
SMD SOT23 7E
to4 smd
smd to4
transistor DI 763
2N7002 phi
ic87
2N7002
UBB073
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A4P marking code
Abstract: diode a4p a4p sot-23 sot23 a4p 100X2 BAV70 BAW62 philips sot-23 bav70 MARKING CODE D4t
Text: • 0 0 2 M 3 SS 330 « a p x N AMER PHILIPS/DISCRETE BAV70 fc,7E D SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAV70 consists of two diodes in a microminiature plastic envelope. The cathodes are commoned and the unit is intended for high-speed switching in thick and thin-film circuits.
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002M3SS
BAV70
BAV70
A4P marking code
diode a4p
a4p sot-23
sot23 a4p
100X2
BAW62
philips sot-23 bav70
MARKING CODE D4t
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marking z3p
Abstract: Y4P marking code marking z2p marking y6p marking z4p marking z8p b5v6 marking z5p marking z6P inverter LS600
Text: • ^53*131 00SS7b0 211 H A P X N AMER PHI LIPS /DISCRETE BZX84 SERIES L.7E ]> SILICON PLANAR VOLTAGE REGULATOR DIODES Low power general purpose voltage regulator diodes in a micro m iniature plastic envelope. They are available in three series; one to the international standardized E24 (± 5% range, one in a tolerance of
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00SS7b0
BZX84
DDSS77D
marking z3p
Y4P marking code
marking z2p
marking y6p
marking z4p
marking z8p
b5v6
marking z5p
marking z6P
inverter LS600
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Untitled
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTORS ISSUE 3 - JANUARY 1996 O_ PAR TM ARKING DETAIL - F M M ÏA 4 2 - FMMTA42 FMMTA43 3E FM M TA43- IE F M M T A 4 2 R - 7E F M M TA 43R C O M PLEM ENTAR Y TYPES - 5E F M M T A 4 2 - F M M TA 92 F M M T A 4 3 - F M M TA 93
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FMMTA42
FMMTA43
TA43F
300jis.
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transistor K 1377
Abstract: 1377 transistor "Programmable Unijunction Transistor" programmable unijunction transistor BRY61 BRY61 EQUIVALENT "Programmable Unijunction Transistor" 70v Philips MARKING CODE a5p 33131 unijunction transistor
Text: • bbS3T31 N AMER 00SSM3Û 0 2T « A P X PHILIPS/DISCRETE b 7E BRY61 D PROGRAMMABLE UNIJUNCTION TRANSISTOR Planar p-n-p-n trigger device in a m icrom iniature plastic envelope intended fo r applications in th ick and th in -film circuits. It is intended fo r use in switching applications such as m otor control, oscillators,
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bbS3T31
00SSM3Ã
BRY61
10kfi
OT-23.
100kXL'
10kfl
transistor K 1377
1377 transistor
"Programmable Unijunction Transistor"
programmable unijunction transistor
BRY61
BRY61 EQUIVALENT
"Programmable Unijunction Transistor" 70v
Philips MARKING CODE a5p
33131
unijunction transistor
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3D0 marking sot23
Abstract: MARKING CODE 7E VF M74 marking ir 1759 PMBD2835 PMBD2836 2835 diode marking 7E SOT-23 Diode
Text: • bLSBTBl 0DBS7TS S3fl ■ APX N AMER P H I L I P S / D I S C R E T E L.7E PMBD 2835 PMBD 2836 J> SILICON PLANAR EPITAXIAL HIGH SPEED DIODES The P M B D 2835 and 283 6 consist of tw o diodes in a microminiature plastic envelope. The anodes are commoned and the unit is intended for high speed switching.
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PMBD2835
PMBD2835
PMBD2836
PMBD2835:
PMBD2836:
00E57T7
3D0 marking sot23
MARKING CODE 7E VF
M74 marking
ir 1759
PMBD2836
2835 diode
marking 7E SOT-23 Diode
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smd code HF transistor
Abstract: transistor SMD MARKING CODE HF marking code CIE SMD Transistor transistor smd marking hf SMD HF transistor smd code marking rf ft sot23 SMD Transistor 7e K TRANSISTOR SMD MARKING CODE 596 m 147 smd transistor SMD TRANSISTOR MARKING 76
Text: • hbS3131 0DE47Qfl 14fl ■ N AMER P H I L I P S / D I S C R E T E APX BF824 fc.7E D J V_ H.F. SILICON PLANAR EPITAXIAL T RA N SIST O R P-N-P transistor in a plastic SO T-23 envelope especially intended for r.f. stages in f.m. front-ends in common base configuration for S M D applications.
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hbS3131
QDE47QS
BF824
OT-23
7z72158
DDEM713
BF824
7z72157
7z72161
smd code HF transistor
transistor SMD MARKING CODE HF
marking code CIE SMD Transistor
transistor smd marking hf
SMD HF transistor
smd code marking rf ft sot23
SMD Transistor 7e
K TRANSISTOR SMD MARKING CODE 596
m 147 smd transistor
SMD TRANSISTOR MARKING 76
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Untitled
Abstract: No abstract text available
Text: SIEMENS PNP Silicon Transistors • • • • SMBT 5086 SMBT 5087 For AF input stages and driver applications High current gain Low coliector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Type Marking Ordering Code tape and reel PinCContigui ation
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Q62702-M0002
Q68000-A8319
OT-23
fl235L
235b05
01225b?
5235b05
0122SLÃ
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Untitled
Abstract: No abstract text available
Text: t.bSB'm DOSSfllO b74 • APX PMBF170 N AUER PHILIPS/DISCRETE b7E D _ J \ _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. Designed fo r use as a
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PMBF170
bb53T31
00ES81E
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TRANSISTOR SMD MARKING CODE pKX
Abstract: TRANSISTOR SMD MARKING CODE DM smd code pKX TRANSISTOR SMD MARKING CODE ld smd transistor marking BL SMD TRANSISTOR MARKING code DD SMD CODE TRANSISTOR JA PMBF170 TRANSISTOR SMD MARKING CODE 2A SMD SOT23 transistor PMBF170
Text: • bLiSB'm DÜBSÖIO b 7 4 ■ N AMER P H I L I P S / D I S C R E T E APX b7E PMBF170 D N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. Designed fo r use as a Surface Mounted Device SMD in thin and thick-film circuits w ith applications in relay, high-speed
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PMBF170
200rnA
bbS3T31
TRANSISTOR SMD MARKING CODE pKX
TRANSISTOR SMD MARKING CODE DM
smd code pKX
TRANSISTOR SMD MARKING CODE ld
smd transistor marking BL
SMD TRANSISTOR MARKING code DD
SMD CODE TRANSISTOR JA
PMBF170
TRANSISTOR SMD MARKING CODE 2A
SMD SOT23 transistor PMBF170
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Untitled
Abstract: No abstract text available
Text: • 1^53=131 QDESSSti 283 H A P X Philips Semiconductors Product specification ANER PHILIPS /DISC RE TE b?E NPN 1 GHz wideband transistor DESCRIPTION BFS17 e PINNING NPN transistor In a plastic SOT23 envelope. It is intended for a wide range of RF applications, such as mixers and
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BFS17
MEA393
MEA397
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