smd code HF transistor
Abstract: transistor SMD MARKING CODE HF marking code CIE SMD Transistor transistor smd marking hf SMD HF transistor smd code marking rf ft sot23 SMD Transistor 7e K TRANSISTOR SMD MARKING CODE 596 m 147 smd transistor SMD TRANSISTOR MARKING 76
Text: • hbS3131 0DE47Qfl 14fl ■ N AMER P H I L I P S / D I S C R E T E APX BF824 fc.7E D J V_ H.F. SILICON PLANAR EPITAXIAL T RA N SIST O R P-N-P transistor in a plastic SO T-23 envelope especially intended for r.f. stages in f.m. front-ends in common base configuration for S M D applications.
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hbS3131
QDE47QS
BF824
OT-23
7z72158
DDEM713
BF824
7z72157
7z72161
smd code HF transistor
transistor SMD MARKING CODE HF
marking code CIE SMD Transistor
transistor smd marking hf
SMD HF transistor
smd code marking rf ft sot23
SMD Transistor 7e
K TRANSISTOR SMD MARKING CODE 596
m 147 smd transistor
SMD TRANSISTOR MARKING 76
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Untitled
Abstract: No abstract text available
Text: • bh53131 005CH15 h M N ANER PHILIPS/DISCRETE CNX35 CNX36 CNX39 S5E D T - 4 1 -0 3 OPTOCOUPLERS Optically coupled isolators consisting of an infrared emitting GaAs diode and a silicon npn photo transistor with accessible base. Plastic envelopes. Suitable for TTL integrated circuits.
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bh53131
005CH15
CNX35
CNX36
CNX39
CNX35U,
CNX36U
CNX39U.
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BUZ84A
Abstract: No abstract text available
Text: PowerMOS transistor_ BUZ84A_ | N AUER PHILIPS/DISCRETE ObE D • bbSBTBl 0 0 m 7 0 3 5 ■ July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metai envelope. This device is intended for use in
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BUZ84A_
BUZ84A
bbS3T31
T-39-13
BUZ84A
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bd239a ti
Abstract: No abstract text available
Text: 11 N AMER PHILIPS/DISCRETE . bL>53T31 0011363 5 • 2SE D BD239; BD239A BD239B; BD239C SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended fo r use in audio output stages, general amplifier and high-speed switching applications.P-N-P complements are BD240; 240A; 240B and BD240C.
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53T31
BD239;
BD239A
BD239B;
BD239C
BD240;
BD240C.
BD239
bd239a ti
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iran
Abstract: BUK455-450B T0220AB taig
Text: N AMER PHILIPS/DISCRETE ESE D • bbS3T31 0050505 =1 ■ PowerMOS transistor BUK455-450B T-3T-/3 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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bbS3T31
BUK455-450B
T-37-13
iran
BUK455-450B
T0220AB
taig
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BYP22
Abstract: step recovery diode BYP22-50 diode t03 J-703 Av
Text: N AMER PHILIPS/DISCRETE 2SE » • J 1*1.53131 0GS237S T ■ BYP22 SERIES 7 ^ 0 3 -/9 ULTRA FAST-RECOVERY DOUBLE RECTIFIER DIODES FEATURING LOW REVERSE LEAKAGE Glass-passivated, high-efficiency epitaxial rectifier diodes in plastic envelopes, featuring lo w reverse
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0GS237S
BYP22
m2485
G0S53S3
T-03-/?
m2486
T-03-/9
m2489
step recovery diode
BYP22-50
diode t03
J-703 Av
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BDT62B
Abstract: No abstract text available
Text: BDT62; 62A BDT62B; 62C _ J K . SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m onolithic Darlington circu it for audio output stages and general am plifier and switching applications. TO-220 plastic envelope. N-P-N complements are BDT63,
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BDT62;
BDT62B;
O-220
BDT63,
bbS3T31
BDT62B
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