Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BH53131 Search Results

    BH53131 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: • bh53131 005CH15 h M N ANER PHILIPS/DISCRETE CNX35 CNX36 CNX39 S5E D T - 4 1 -0 3 OPTOCOUPLERS Optically coupled isolators consisting of an infrared emitting GaAs diode and a silicon npn photo transistor with accessible base. Plastic envelopes. Suitable for TTL integrated circuits.


    OCR Scan
    bh53131 005CH15 CNX35 CNX36 CNX39 CNX35U, CNX36U CNX39U. PDF

    Untitled

    Abstract: No abstract text available
    Text: • bh53131 00E3T77 STT « A P X N A PIER PHIL IPS/D ISCR ETE BST120 b7E D P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.


    OCR Scan
    bh53131 00E3T77 BST120 PDF

    BLW90

    Abstract: 8-32UNC J188
    Text: N AMER PHILIPS/DISCRETE bTE ]> • bh53131 IAPX D O ET^C Jl BLW 90 U.H.F. P O W E R T R A N S IS T O R N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f, range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and


    OCR Scan
    bh53131 BLW90 7Z83356 7Z8335B 7Z83353 BLW90 8-32UNC J188 PDF

    Fast Gate Turn-Off Thyristors

    Abstract: BTW58
    Text: 1 AilER PHILIPS/DISCRETE^ ^ ~ O b E J > 53^31 0 0 1 1 % 1 1 BTW 58 SERIES T ' 2 S - l£ T FAST GATE TURN-OFF THYRISTORS Thyristors in TO-220AB envelopes capable o f being turned both on and o ff via the gate. They are suitable fo r use in high-frequency inverters, resonant power supplies, motor control, horizontal


    OCR Scan
    O-220AB BTW58â 1000R 1300R 1500R QDin72 BTW58 Fast Gate Turn-Off Thyristors PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHI LI PS /D IS CR ETE bbS 3 T 3 i 002041s a • 5SE D PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan
    002041s BUK445-600A BUK445-600B BUK445 -600A -600B T-39-09 PDF

    BD204

    Abstract: BD202 BDX78 BD201 80204 BD203 BDX77 IEC134
    Text: BD202 BD204 BDX78 -/V . SILICON EPITAXIAL-BASE POWER TRANSISTORS PNP transistors in a plastic envelope. With their npn complements BD201, BD203, and BDX77,they are primarily intended for use in hi-fi equipment delivering an output of 15 to 25 W into a 4 Î Ï or


    OCR Scan
    BD202 BD204 BDX78 BD201, BD203, BDX77 BD202 BD204 O-220. BDX78 BD201 80204 BD203 IEC134 PDF