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    g28 SOT23

    Abstract: LE SOT23-4 BS250F s33 sot23
    Text: “ÌS P LE S S EY SEtlICOND/DISCRETE 7220533 PLESSEY DE 1• 7 2 2 0 5 3 3 0005525 3 SEMICOND/ D I S C R E T E 95D 05525 T '3 S '- 2 5 BS250F P-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown


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    BS250F BS250F 7E2DS33 0DS531 g28 SOT23 LE SOT23-4 s33 sot23 PDF

    BS170A

    Abstract: EI5D
    Text: PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY ^5 SEM ICO ND/ D ISCR ETE D eT | 7 H 5 0 5 3 3 00PSS17 ' 95D 05517 D 35-25 N-channel enhancem ent mode vertical D M O S FET BS170 FEAT U RES • Com pact geometry • Fast sw itching speeds • No secondary breakdown


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    00PSS17 BS170 BS170F 7E20533 7EEGS33 000S5E3 22DS33 BS170A EI5D PDF