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    0535t

    Abstract: No abstract text available
    Text: D e ' | ? E 20533 ODGSbSS 7 PLESSEY S E M C O N D / D I S C R E T E 7220533 PLESSEY SEMICOND/DISCRETE 95D 0 5 6 2 5 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geom etry • Fast sw itching speeds • No secondary breakdown • Excellent temperature stability


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    G-131 G-132 G-133 7SSDS33 G-134 0535t PDF

    VN10LF

    Abstract: scr 209
    Text: PLESSEY SE NI COND /D IS CR ET E 03_ ~ N-channel enhancement mode vertical D M O S FET r-z7-z.r VN10LF A B S O L U T E M A X IM U M R A T IN G S Parameter Sym bol Drain-source voltage I>e J|722GS33 □ □Üti75ti 7 ' SO T -2 3 60 V ds Unit V Continuous drain current at TA = 25°C


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    722GS33 ti75ti VN10LF 7EE0S33 VN10LF scr 209 PDF