diode AY 101
Abstract: IPD50R520CP
Text: NjbW IPD50R520CP CoolMOSTM Power Transistor Product Summary Package V*EL;HI<?=JG;E<C;G?I0IHM/Y V3BIG7BEL=7I;9>7G=; V"19N\_Si //* P R>M#a`$&_Si * /,* +- `= QY&ejb V#MIG;C;:K :IG7I;: V&?=>F;7A9JGG;DI97F78?B?IN
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IPD50R520CP
97F78
799EG:
87BB7HI
diode AY 101
IPD50R520CP
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A5 GNA
Abstract: 2A930
Text: <9.$+7* /' 330 = 3:)5!5%26-6735 2EASTQE +;LG;KEBJI?ED7GN>?=>KEBI7=;I;9>DEBE=N 09 O ,=L"a`# *(0 )= 1(- 9 2BIG7BEL=7I;9>7G=; -;G?E:?97K7B7D9>;G7I;: I'MH,*'- I'MH,*
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97F78
F79A7=
7G79I
A5 GNA
2A930
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Untitled
Abstract: No abstract text available
Text: 9?3-'@*/,4? 4VVS=>AB=#:A0<&<,9=4=>:< #<:/?.>%?88,<C 7LHZ[XLY - "1 2\&_Si V*EL;HI<?=JG; E< C;G?I0 IHM/Y + >M#a`$&_Si V3BIG7BEL=7I;9>7G=; * Y&ejb 0/* P * -2/ +1 `= V&?=>F;7A9JGG;DI97F78?B?IN V/J7B?<?;:for industrial grade applications 799EG:?D=IE(#"#!
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97F78
799EG:
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g7da-28z 8a
Abstract: g7da-28(z) 8a
Text: 4D>+ 05 %>A7#%(G&%>A7;=@G(;/:(75</: ?/<@7@A=? &?=2B1A(B;/?F 8OK]^[O\ B @ &,) ,) M . ?KS 1 1) .0 _ . ?KS 1 *,) 2, &+') +', ECFB;C;DI7GN,*9>7DD;B !D>7D9;C;DICE:; . <K (E=?9B;K;B 1G7I;:
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799EG:
g7da-28z 8a
g7da-28(z) 8a
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we 9d
Abstract: No abstract text available
Text: 4D>+ 05 % >A7# % ( G & % >A7; =@G ( ; /: ( 75</: ?/<@7@A=? & ?=2 B1A( B; ; /?F 8OK]^[O\ B @ &,) ,) M . ?K S 1 1) .0 _" . ?K S 1 *,) 2, &+') +', # EC FB;C ;DI7GN, * 9>7DD;B # !D>7D9;C ;DIC E: ; . <K # ( E=? 9 B;K;B 1 G7I ;: + <K"a`#%_Si
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9CDD
Abstract: No abstract text available
Text: 3C5/+'? $ =@6" $ ' F ' : .99' 64;.9 >.;?6?@<> % ><1 A0@' A: : .>E 7NJ\]ZN[ ;J V J7B) 9>7DD;B ' ;J"a`#$_Si V D>7D9;C ;DIC E: ; V 0 BIG7 ' E=?9 B;K;B 1 G7I;: *( M ) >J 1 ,( _" ) >J 1 -.( $; (&00 7 V K7B7D9>; G7I;: V , J7B?<?;: 799EG: ?D= IE
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ed7c
Abstract: No abstract text available
Text: 3CC/ -?G $ =@6" $ ' F ' : .99' 64;.9(>.;?6?@<> % ><1 A0@' A: : .>E 7NJ\]ZN[ ;J V ) 9>7DD;B ' ;J"a`#$_Si V D>7D9;C ;DIC E: ; V 0 BIG7 ' E=?9 B;K;B 1 G7I;: *( M ) >J 1 ).( _" ) >J 1 *,( $; )&, 7 V K7B7D9>; G7I;: V , J7B?<?;: 799EG: ?D= IE
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th296
Abstract: nis09
Text: <9.$+7* /' 330 = 3: )5! 5%26-6735 2EASTQE %$+ ;L G;KEBJI?ED7GN >?=> KEBI7=; I;9>DEBE=N % 2 BIG7 BEL =7I; 9>7G=; %$- ;G?E: ?9 7K7B7D9>; G7I;: I$'MH,*'- 09 %$" O ,=L"a`# *(0 ! )= 1(- 9 !!!!!!!!!!!!!!!!!!!!!!!!!!!!!!I$'MH,*
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we 9d
Abstract: k17c DFJI
Text: 4D>* -5 % >A7# % G % >A7# % ( G & ( ; /: ( 75</: )?/<@7@A=? & ?=2 B1A( B; ; /?F 8OK]^[O\ B @ &+) +) M . ?K S 1 *.) *-) _" . ?K S 1 +1) +.) &*'. *'. # EC FB;C ;DI7GN, * 9>7DD;B . <K # !D>7D9;C ;DIC E: ; + <K"a`#%_Si / JF;G( E=? 9 B;K;B 1 G7I
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Untitled
Abstract: No abstract text available
Text: 9?3,'@ 004? 4VVS=>AB=#:A0<&<,9=4=>:< #<:/?.>%?88,<C 7LHZ[XLY V*EL;HI<?=JG;E<C;G?I0IHM/Y V3BIG7BEL=7I;9>7G=; - "19N\_Si //* P + >M#a`$&_Si * ,33 ,- `= * Y&ejb V#MIG;C;:K :IG7I;: V&?=>F;7A9JGG;DI97F78?B?IN
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97F78
799EG:
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Untitled
Abstract: No abstract text available
Text: 4D>* -5 %>A7#% G%>A7#%(G &(;/:(75</:)?/<@7@A=? &?=2B1A(B;/?F 8OK]^[O\ B @ &+) +) M . ?KS 1 *.) *-) _ . ?KS 1 +1) +.) &*'. *'. ECFB;C;DI7GN,*9>7DD;B . <K !D>7D9;C;DICE:; + <K"a`#%_Si /JF;G(E=?9B;K;B 1G7I;:
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799EG:
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diode EZD
Abstract: diode AY 101
Text: IPD50R399CP CoolMOSTM Power Transistor Product Summary Features V*EL;HI<?=JG;E<C;G?I0-,M/Y V3BIG7BEL=7I;9>7G=; V"19N\_Si //* P R>M#a`$&_Si * -33 +1 `= QY&ejb V#MIG;C;:K :IG7I;: V&?=>F;7A9JGG;DI97F78?B?IN
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IPD50R399CP
97F78
799EG:
/L-33J
diode EZD
diode AY 101
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