7MMV4101
Abstract: 775402
Text: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: SR 0005-06 Product Affected: 7MMV4101 DATE: Manufacturing Location Affected: Date Effective: 9/3/00 Contact: Title: Phone #: Fax #: E-mail:
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7MMV4101
FRC-1509-01
QCC-1795
7MMV4101
775402
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PDF
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Untitled
Abstract: No abstract text available
Text: 128K x 24 Three Megabit 3.3V CMOS Static RAM Features ◆ Description High density 3 megabit 3.3V static RAM Low profile 119 lead, 14mm x 22mm BGA Ball Grid Array Fast RAM access times: 10,12,15ns Single 3.3V power supply Multiple Vcc & GND pins for maximum noise immunity
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Original
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IDT7MMV4101
IDT7MMV4101
IDT71V124)
7MMV4101
x4033
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PDF
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7MMV4101S10BG
Abstract: IDT71V124 IDT7MMV4101
Text: PRELIMINARY 7MMV4101 128K x 24 THREE MEGABIT 3.3V CMOS STATIC RAM Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 3 megabit 3.3V static RAM • Low profile 119 lead, 14mm x 22mm BGA Ball Grid Array • Fast RAM access times: 10,12,15ns
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Original
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IDT7MMV4101
IDT7MMV4101
IDT71V124)
7MMV4101
7MMV4101S10BG
IDT71V124
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PDF
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IDT71V124
Abstract: IDT7MMV4101
Text: 128K x 24 Three Megabit 3.3V CMOS Static RAM Features ◆ Description High density 3 megabit 3.3V static RAM Low profile 119 lead, 14mm x 22mm BGA Ball Grid Array Fast RAM access times: 10,12,15ns Single 3.3V power supply Multiple Vcc & GND pins for maximum noise immunity
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Original
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IDT7MMV4101
IDT7MMV4101
IDT71V124)
7MMV4101
IDT71V124
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PDF
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IDT71V124
Abstract: IDT7MMV4101 1 megabit 128K x 8 SRAM
Text: PRELIMINARY 7MMV4101 128K x 24 Three Megabit 3.3V CMOS Static RAM Features ◆ Description High density 3 megabit 3.3V static RAM Low profile 119 lead, 14mm x 22mm BGA Ball Grid Array Fast RAM access times: 10,12,15ns Single 3.3V power supply Multiple Vcc & GND pins for maximum noise immunity
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Original
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IDT7MMV4101
IDT7MMV4101
IDT71V124)
7MMV4101
x4033
IDT71V124
1 megabit 128K x 8 SRAM
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PDF
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MV4101
Abstract: No abstract text available
Text: PRELIMINARY IDT7MM V4101 128K x 24 THREE M EG AB IT 3.3V CMOS STATIC RAM FEATURES: DESCRIPTION: • High density 3 megabit 3.3V static RAM The 7MMV4101 is a three megabit static RAM con structed on an multilayer laminate substrate using three 3.3V, 128K x 8 IDT71V124 static RAMS encapsulated in a Ball
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OCR Scan
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V4101
IDT7MMV4101
IDT71V124)
V4101
71V124
7MMV4101
MV4101
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY I DT7MM V 4 1 01 128K x 24 THREE M E G A B I T 3.3V C M O S STATIC RAM F E A TU R E S : DE S CR IP T IO N: • High density 3 megabit 3.3V static RAM The 7MMV4101 is a three megabit static RAM con structed on an m ultilayer laminate substrate using three 3.3V,
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OCR Scan
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IDT7MMV4101
IDT71V124)
V4101
71V124
7MMV4101
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PDF
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MT 5388 BGA
Abstract: Broadcom 7019 BTS 6000 ericsson alcatel 1511 mux mobile switching center msc ericsson bts 6000 2x4 TTL demultiplexer cisco 2801 ericsson bts Technical specification alcatel 1511
Text: IDT Product Selector Guide Accelerated Thinking SM Table of Contents Integrated Processors Flow-Control Management Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
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12-03/DS/DL/BAY/10K
CORP-PSG-00123
MT 5388 BGA
Broadcom 7019
BTS 6000 ericsson
alcatel 1511 mux
mobile switching center msc
ericsson bts 6000
2x4 TTL demultiplexer
cisco 2801
ericsson bts Technical specification
alcatel 1511
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PDF
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7MMV4101
Abstract: IDT71V124 IDT7MMV4101 4083
Text: PRELIMINARY 7MMV4101 128K x 24 THREE MEGABIT 3.3V CMOS STATIC RAM FEATURES: DESCRIPTION: • High density 3 megabit 3.3V static RAM • Low profile 119 lead, 14mm x 22mm BGA Ball Grid Array • Fast RAM access times: 10,12,15ns • Single 3.3V power supply
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Original
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IDT7MMV4101
IDT7MMV4101
IDT71V124)
7MMV4101
IDT71V124
4083
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PDF
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IDT71V124
Abstract: IDT7MMV4101
Text: PRELIMINARY 7MMV4101 128K x 24 THREE MEGABIT 3.3V CMOS STATIC RAM Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 3 megabit 3.3V static RAM • Low profile 119 lead, 14mm x 22mm BGA Ball Grid Array • Fast RAM access times: 10,12,15ns
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Original
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IDT7MMV4101
IDT7MMV4101
IDT71V124)
7MMV4101
IDT71V124
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PDF
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IDT71V124
Abstract: IDT7MMV4101
Text: PRELIMINARY 7MMV4101 128K x 24 Three Megabit 3.3V CMOS Static RAM Features ◆ Description High density 3 megabit 3.3V static RAM Low profile 119 lead, 14mm x 22mm BGA Ball Grid Array Fast RAM access times: 10,12,15ns Single 3.3V power supply Multiple Vcc & GND pins for maximum noise immunity
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Original
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IDT7MMV4101
IDT7MMV4101
IDT71V124)
7MMV4101
x4033
IDT71V124
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PDF
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4083
Abstract: IDT71V124 IDT7MMV4101
Text: PRELIMINARY 7MMV4101 128K x 24 THREE MEGABIT 3.3V CMOS STATIC RAM FEATURES: DESCRIPTION: • High density 3 megabit 3.3V static RAM • Low profile 119 lead, 14mm x 22mm BGA Ball Grid Array • Fast RAM access times: 10,12,15ns • Single 3.3V power supply
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Original
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IDT7MMV4101
IDT7MMV4101
IDT71V124)
7MMV4101
4083
IDT71V124
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PDF
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bg1012
Abstract: No abstract text available
Text: PRELIMINARY 7MMV4101 128K x 24 Three Megabit 3.3V CMOS Static RAM Features ◆ Description High density 3 megabit 3.3V static RAM Low profile 119 lead, 14mm x 22mm BGA Ball Grid Array Fast RAM access times: 10,12,15ns Single 3.3V power supply Multiple Vcc & GND pins for maximum noise immunity
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Original
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IDT7MMV4101
IDT7MMV4101
IDT71V124)
11VIEW
7MMV4101
x4033
bg1012
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 7MMV4101 128K x 24 THREE MEGABIT 3.3V CMOS STATIC RAM FEATURES: DESCRIPTION: • High density 3 megabit 3.3V static RAM • Low profile 119 lead, 14mm x 22mm BGA Ball Grid Array • Fast RAM access times: 10,12,15ns • Single 3.3V power supply
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Original
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IDT7MMV4101
IDT7MMV4101
IDT71V124)
7MMV4101
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 7MMV4101 128K x 24 THREE MEGABIT 3.3V CMOS STATIC RAM Integrated Device Technology, Inc. DESCRIPTION: FEATURES: • High density 3 megabit 3.3V static RAM The 7MMV4101 is a three megabit static RAM con structed on an multilayer laminate substrate using three 3.3V,
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OCR Scan
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IDT7MMV4101
IDT7MMV4101
IDT71V124)
7MMV4101
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 7MMV4101 128K x 24 THREE MEGABIT 3.3V CMOS STATIC RAM Integrated Device Technology, Inc. DESCRIPTION: FEATURES: • High density 3 megabit 3.3V static RAM The 7MMV4101 is a three megabit static RAM con structed on an multilayer laminate substrate using three 3.3V,
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OCR Scan
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IDT7MMV4101
IDT7MMV4101
IDT71V124)
71V124
7MMV4101
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PDF
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UM61256FK-15
Abstract: YD 6409 philips diode PH 33J um61256 um61256ak-15 PZ 5805 PHILIPS UM6164 KM6264BLS-7 UM61256ak sram IDT8M624
Text: QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH QUAD 2:1 MUX/DEMUX QS3257 QS32257 FEATURES/BENEFITS DESCRIPTION • • • • • • • • The QS3257 is a high-speed CMOS LVTTL-compatible Quad 2:1 multiplexer/demultiplexer. The QS3257 is a function and pinout compatible QuickSwitch
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74F257,
74FCT257,
74FCT257T
QS32257
QS3257
QS32257
UM61256FK-15
YD 6409
philips diode PH 33J
um61256
um61256ak-15
PZ 5805 PHILIPS
UM6164
KM6264BLS-7
UM61256ak sram
IDT8M624
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PDF
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