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    IDT71V124 Price and Stock

    Renesas Electronics Corporation IDT71V124SA15Y

    IC SRAM 1MBIT PARALLEL 32SOJ
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    Renesas Electronics Corporation IDT71V124SA10PH

    IC SRAM 1MBIT PARALLEL 32TSOP II
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    Renesas Electronics Corporation IDT71V124SA12YI

    IC SRAM 1MBIT PARALLEL 32SOJ
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    Renesas Electronics Corporation IDT71V124SA10Y8

    IC SRAM 1MBIT PARALLEL 32SOJ
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    Renesas Electronics Corporation IDT71V124SA12TY

    IC SRAM 1MBIT PARALLEL 32SOJ
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    IDT71V124 Datasheets (116)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IDT71V124 Integrated Device Technology 3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Original PDF
    IDT71V124 Integrated Device Technology 3.3V128K x 8 Static RAM Center Pwr & Gnd Pinout Original PDF
    IDT71V124HSA10PH Integrated Device Technology Memory, Integrated Circuits (ICs), IC SRAM 1MBIT 10NS 32TSOP Original PDF
    IDT71V124HSA10PH8 Integrated Device Technology Memory, Integrated Circuits (ICs), IC SRAM 1MBIT 10NS 32TSOP Original PDF
    IDT71V124HSA12PH Integrated Device Technology Memory, Integrated Circuits (ICs), IC SRAM 1MBIT 12NS 32TSOP Original PDF
    IDT71V124HSA12PH8 Integrated Device Technology Memory, Integrated Circuits (ICs), IC SRAM 1MBIT 12NS 32TSOP Original PDF
    IDT71V124S12Y Integrated Device Technology SRAM GP Single Port Original PDF
    IDT71V124S15 Integrated Device Technology 3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Original PDF
    IDT71V124S15Y Integrated Device Technology 3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Original PDF
    IDT71V124S15Y Integrated Device Technology 3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Original PDF
    IDT71V124S15YI Integrated Device Technology 3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Original PDF
    IDT71V124S15YI Integrated Device Technology 3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Original PDF
    IDT71V124S20 Integrated Device Technology 3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Original PDF
    IDT71V124S20Y Integrated Device Technology 3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Original PDF
    IDT71V124S20Y Integrated Device Technology 3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Original PDF
    IDT71V124S20Y Integrated Device Technology 3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Original PDF
    IDT71V124S20YI Integrated Device Technology 3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Original PDF
    IDT71V124S20YI Integrated Device Technology 3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Original PDF
    IDT71V124SA Integrated Device Technology 3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Original PDF
    IDT71V124SA10 Integrated Device Technology 3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Original PDF

    IDT71V124 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    71V124SA

    Abstract: 71V124 IDT71V124
    Text: IDT71V124 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Revolutionary Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Commercial (0°C to +70°C) and Industrial (–40°C to


    Original     		IDT71V124 15/20ns 32-pin IDT71V124 576-bit 71V124SA. S-0004 x4033 71V124SA 71V124 PDF

    71V124SA

    Abstract: 71V124 IDT71V124
    Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Revolutionary Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V124 Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Commercial (0°C to +70°C) and Industrial (–40°C to


    Original     		IDT71V124 15/20ns 32-pin IDT71V124 576-bit 71V124SA. S-0004 x4033 71V124SA 71V124 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times


    Original     		IDT71V124SA 10/12/15ns 12/15ns 32-pin 400-mil IDT71V124 576-bit PDF

    IDT71V124

    Abstract: IDT71V124SA 71V124SA
    Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times


    Original     		IDT71V124SA 10/12/15/20ns 32-pin 400-mil IDT71V124 576-bit IDT71V124SA 71V124SA PDF

    SO32-2

    Abstract: IDT71V124 IDT71V124SA SO32
    Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V124SA/HSA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times


    Original     		IDT71V124SA/HSA 10/12/15/20ns 32-pin 400-mil IDT71V124 576-bit SO32-2 IDT71V124SA SO32 PDF

    71v124

    Abstract: IDT71V124 IDT71V124SA
    Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times


    Original     		IDT71V124SA 10/12/15/20ns 12/15/20ns 32-pin 400-mil IDT71V124 576-bit x4033 71v124 IDT71V124SA PDF

    SO32-3

    Abstract: SO-323 IDT71V124 IDT71V124SA SO32
    Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times


    Original     		IDT71V124SA 10/12/15ns 12/15ns 32-pin 400-mil IDT71V124 576-bit SO32-3 SO-323 IDT71V124SA SO32 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout IDT71V124SA Features Description ◆ The IDT71V124 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative


    Original     		IDT71V124SA IDT71V124 576-bit PDF

    SO32-3

    Abstract: IDT71V124 IDT71V124SA SO32-2
    Text: 3.3V CMOS STATIC RAM 1 MEG 128K x 8 CENTER POWER & GROUND PINOUT IDT71V124SA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise • Equal access and cycle times


    Original     		IDT71V124SA 10/12/15/20ns 32-pin 400-mil 32pin IDT71V124 576-bit 200mV 71V124 SO32-3 IDT71V124SA SO32-2 PDF

    IDT71V124

    Abstract: IDT71V124SA
    Text: 3.3V CMOS STATIC RAM 1 MEG 128K x 8 CENTER POWER & GROUND PINOUT PRELIMINARY IDT71V124SA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise


    Original     		IDT71V124SA 10/12/15/20ns 32-pin 400-mil 32pin IDT71V124 576-bit 200mV 71V124 IDT71V124SA PDF

    71V124SA

    Abstract: C8051 code a7 74VHC573 C8051F000 IDT71V124 IDT71V124SA10PH
    Text: Application Note 06 Interfacing an External SRAM to the C8051F000 Cygnal C8051 IDT71V124 128Kx8 SRAM A[16:8] ADDRESS BUS A[16:8] 74VHC573 Octal Latch LE ALE AD[7:0] ADDRESS / DATA BUS D Q A[7:0] I/O[7:0] CS CS /WR WE /RD OE Figure 1. External SRAM Block Diagram.


    Original     		C8051F000 C8051 IDT71V124 128Kx8 74VHC573 C8051 100ns 20MHz AN06-1 NOV00 71V124SA code a7 74VHC573 C8051F000 IDT71V124 IDT71V124SA10PH PDF

    71V124

    Abstract: IDT71V124
    Text: 3.3V CMOS STATIC RAM 1 MEG 128K x 8-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71V124 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise.


    Original     		IDT71V124 12/15/20ns Plastic32-pin 32-pin IDT71V124 576-bit 200mV 71V124 400-mil 71V124 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times


    Original     		IDT71V124SA 10/12/15/20ns 32-pin 400-mil IDT71V124 576-bit PDF

    IDT71V124

    Abstract: IDT71V124SA
    Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V124SA/HSA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times


    Original     		IDT71V124SA/HSA 10/12/15/20ns 32-pin 400-mil IDT71V124 576-bit IDT71V124SA PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times


    Original     		IDT71V124SA 10/12/15ns 12/15ns 32-pin 400-mil IDT71V124 576-bit PDF

    SO32

    Abstract: 71V124 IDT71V124
    Text: 3.3V CMOS STATIC RAM 1 MEG 128K x 8-BIT REVOLUTIONARY PINOUT IDT71V124 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise • Commercial (0˚ to 70˚C) and Industrial (-40˚ to +85˚C)


    Original     		IDT71V124 15/20ns 32-pin IDT71V124 576-bit 200mV 71V124 400-mil SO32-3) SO32 71V124 PDF

    Untitled

    Abstract: No abstract text available
    Text: jdt Integrated Device Technology, Inc. 3.3V C M O S STATIC RAM 1 MEG 128K x 8) CENTER POWER & GROUND PINOUT PRELIMINARY IDT71V124SA FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed C M O S static RAM • JED EC revolutionary pinout (center power/GND) for


    OCR Scan     		IDT71V124SA 10/12/15/20ns 32-pin 400-mil 32pin IDT71V124 576-bit PDF

    s0324

    Abstract: No abstract text available
    Text: dt) 3.3V CMOS STATIC RAM 1 MEG 128K x 8-BIT) REVOLUTIONARY PINOUT PRELIMINARY IDT71V124 Integrated De vice Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JED E C revolutionary pinout (center power/G ND) for reduced noise.


    OCR Scan     		IDT71V124 12/15/20ns Plastic32-pin 32-pin IDT71V124 576-bit 71V124 400-mil S032-3) s0324 PDF

    S0324

    Abstract: S0323
    Text: PRELIMINARY IDT71V124 o Integrated De o 3.3V CMOS STATIC RAM 1 MEG 128K x 8-BIT REVOLUTIONARY PINOUT FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JED EC revolutionary pinout (center power/GND) for reduced noise. • Equal access and cycle tim es


    OCR Scan     		IDT71V124 12/15/20ns Plastic32-pin 32-pin 576-bit 200mV 71V124 400-mil S0324 S0323 PDF

    MV4101

    Abstract: No abstract text available
    Text: PRELIMINARY IDT7MM V4101 128K x 24 THREE M EG AB IT 3.3V CMOS STATIC RAM FEATURES: DESCRIPTION: • High density 3 megabit 3.3V static RAM The IDT7MMV4101 is a three megabit static RAM con­ structed on an multilayer laminate substrate using three 3.3V, 128K x 8 IDT71V124 static RAMS encapsulated in a Ball


    OCR Scan     		V4101 IDT7MMV4101 IDT71V124) V4101 71V124 7MMV4101 MV4101 PDF

    S0323

    Abstract: No abstract text available
    Text: 3.3V CMOS STATIC RAM 1 MEG 128K x 8 CENTER POWER & GROUND PINOUT PRELIMINARY IDT71V124SA FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise • Equal access and cycle times


    OCR Scan     		9/10/12/15/20ns 32-pin 400-mil 32pin IDT71V124SA IDT71V124 576-bit 200mV 71V124 300-mil S0323 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS STATIC RAM 1 MEG 128Kx 8-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71V124 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise.


    OCR Scan     		128Kx IDT71V124 12/15/20ns 32-pin IDT71V124 576-bit 200mV 71V124 400-mil PDF

    land pattern for TSOP 2 44 PIN

    Abstract: com 6116 e2 CHN 920
    Text: 3.3V CMOS STATIC RAM 1 MEG 128K X 8 CENTER POWER & GROUND PINOUT PRELIMINARY IDT71V124SA FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CM O S static RAM • JED E C revolutionary pinout (center power/GND) for reduced noise • Equal access and cycle tim es


    OCR Scan     		9/10/12/15/20ns 32-pin 400-m 32pin IDT71V124SA T71V124 576-bit land pattern for TSOP 2 44 PIN com 6116 e2 CHN 920 PDF

    71v124

    Abstract: No abstract text available
    Text: Î:]Â Nn\ 3.3V CMOS STATIC RAM 1 MEG 128K x 8-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71V124 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for


    OCR Scan     		IDT71V124 12/15/20ns 32-pin IDT71V124 576-bit 200mV 4A25771 0022Sfl2 71V124 71v124 PDF