Untitled
Abstract: No abstract text available
Text: jdt Integrated Device Technology, Inc. 3.3V C M O S STATIC RAM 1 MEG 128K x 8) CENTER POWER & GROUND PINOUT PRELIMINARY IDT71V124SA FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed C M O S static RAM • JED EC revolutionary pinout (center power/GND) for
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OCR Scan
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IDT71V124SA
10/12/15/20ns
32-pin
400-mil
32pin
IDT71V124
576-bit
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PDF
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Untitled
Abstract: No abstract text available
Text: CMOS STATIC RAM 1 MEG 128K x 8-BIT IDT71024 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed C M O S static R AM • Equal access and cycle times — Military: 1 5 /1 7 /2 0 /2 5 n s — Com m ercial: 1 2 /1 5 /1 7/20n s
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OCR Scan
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IDT71024
7/20n
MIL-STD-883,
L32-2)
300-mil
S032-2)
400-mil
S032-3)
4A25771
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PDF
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6116 CMOS RAM
Abstract: 6116 static RAM chip 71V428 IDT71V428 IDT71V428L IDT71V428S
Text: IDT71V428S IDT71V428L 3.3V CMOS Static RAM 4 Meg 1M x 4-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description 1M x 4 advanced high-speed CMOS Static RAM JEDEC Center Power / GND pinout for reduced noise Equal access and cycle times — Commercial and Industrial: 10/12/15ns
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Original
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IDT71V428S
IDT71V428L
10/12/15ns
32-pin,
IDT71V428
304-bit
x4033
6116 CMOS RAM
6116 static RAM chip
71V428
IDT71V428L
IDT71V428S
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PDF
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SO32-3
Abstract: IDT71024 IDT71024S70 S0323
Text: IDT71024S70 CMOS STATIC RAM 1 MEG 128K x 8-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 CMOS static RAM • Equal access and cycle times — Commercial: 70ns • Two Chip Selects plus one Output Enable pin • Bidirectional inputs and outputs directly TTL-compatible
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Original
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IDT71024S70
IDT71024
576-bit
200mV
300-mil
SO32-2)
400-mil
SO32-3)
SO32-3
IDT71024S70
S0323
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PDF
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s0324
Abstract: No abstract text available
Text: dt) 3.3V CMOS STATIC RAM 1 MEG 128K x 8-BIT) REVOLUTIONARY PINOUT PRELIMINARY IDT71V124 Integrated De vice Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JED E C revolutionary pinout (center power/G ND) for reduced noise.
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OCR Scan
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IDT71V124
12/15/20ns
Plastic32-pin
32-pin
IDT71V124
576-bit
71V124
400-mil
S032-3)
s0324
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PDF
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y 4m
Abstract: 641BL
Text: CM O S STATIC RAM 1 MEG 128K x 8-BIT IDT71024 FEATURES: DESCRIPTION: • 128K x 8 a d v a n ce d h ig h -s p e e d C M O S s ta tic R AM T h e ID T 7 1 0 2 4 is a 1 ,0 4 8 ,5 7 6 -b it h ig h -s p e e d sta tic R AM o rg a n iz e d a s 128K x 8. It is fa b ric a te d u sing ID T ’s highp e rfo rm a n c e , h ig h -re lia b ility C M O S te c h n o lo g y. T h is sta teo f-th e -a rt te c h n o lo g y , c o m b in e d w ith in n o va tive c irc u it d esign
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OCR Scan
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IDT71024
300-mil
400-m
MIL-STD-883,
L32-2)
y 4m
641BL
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PDF
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Untitled
Abstract: No abstract text available
Text: 3.3V CMOS STATIC RAM 4 MEG 1Mx 4-BIT Integrated Device Technology, Inc. ADVANCE INFORMATION IDT71V428S IDT71V428L FEATURES: DESCRIPTION: • 1M x 4 advanced high-speed C M O S Static RAM • JEDEC Center Power / GND pinout for reduced noise • Equal access and cycle times
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OCR Scan
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IDT71V428S
IDT71V428L
10/12/15ns
32-pin,
T71V428
304-bit
IDT71V428
71V428
400-mil
S032-3)
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PDF
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CHN 920
Abstract: 71024S15 chn 830
Text: jdt CMOS STATIC RAM 1 MEG 128Kx 8-BIT) IDT71024 ïite g ia te d D ev ize T ech n o logy, ï i c . FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CM O S static RAM • Com m ercial (0° to 70°C), Industrial (-40° to 85°C) and M ilitary (-55° to 125°C) tem perature options
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OCR Scan
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128Kx
IDT71024
15/17/20/25ns
15/20ns
12/15/17/20ns
IL-STD-883,
T71024
576-bit
MS-027,
CHN 920
71024S15
chn 830
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PDF
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Untitled
Abstract: No abstract text available
Text: ADS61B23 w w w .t i.c om SLAS582 – FEBRUARY 2008 12-BIT, 80-MSPS ADC WITH BUFFERED ANALOG INPUTS FEATURES 1 • • • • • • • • • • • • • • • • Maximum Sample Rate: 80 MSPS 12-bit Resolution with No Missing Codes Buffered Analog Inputs with
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Original
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ADS61B23
SLAS582
12-BIT,
80-MSPS
12-bit
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PDF
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IDT71128
Abstract: No abstract text available
Text: CMOS STATIC RAM 1 MEG 256K x 4-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71128 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 256K x 4 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise. • Equal access and cycle times
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Original
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IDT71128
12/15/20ns
32-pin
IDT71128
576-bit
200mV
400-mil
SO32-3)
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PDF
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Untitled
Abstract: No abstract text available
Text: 3.3V CMOS STATIC RAM 4 MEG 1Mx 4-BIT ADVANCE INFORMATION IDT71V428 Integrated Device Technology, inc. FEATURES: DESCRIPTION: • 1M x 4 advanced high-speed CMOS Static RAM • JEDEC Center Power / GND pinout for reduced noise • Equal access and cycle times
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OCR Scan
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IDT71V428
12/15/20ns
32-pin,
IDT71V428
304-bit
drw02
71V428
400-mil
S032-3)
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PDF
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S0323
Abstract: No abstract text available
Text: Integrated Device Technology, Inc. VERY LOW POWER 3.3V CMOS FAST SRAM 1 MEG 128K x 8-BIT FEATURES: • 128K x 8 advanced high-speed CMOS Static RAM • Equal access and cycle times — Commercial: 20/25ns • True 3.3V design, not a re-characterized 5V device
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OCR Scan
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IDT713024SL
20/25ns
S0323
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PDF
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Untitled
Abstract: No abstract text available
Text: CMOS STATIC RAM 1 MEG 128Kx 8-BIT ADVANCE INFORMATION IDT71024 Integrated D evice T ech nology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed C M O S static RAM • Equal access and cycle tim es — M ilitary: 20/25ns — C om m ercial: 15 /17ns
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OCR Scan
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128Kx
IDT71024
20/25ns
/17ns
32-pin
T71024
576-bit
400-m
D32-2)
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PDF
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ADS612X
Abstract: ADS61B23 ADS61B23IRHBT QFN-32 ADS61XX
Text: ADS61B23 www.ti.com SLAS582 – FEBRUARY 2008 12-BIT, 80-MSPS ADC WITH BUFFERED ANALOG INPUTS FEATURES 1 • • • • • • • • • • • • • • • • Maximum Sample Rate: 80 MSPS 12-bit Resolution with No Missing Codes Buffered Analog Inputs with
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Original
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ADS61B23
SLAS582
12-BIT,
80-MSPS
12-bit
ADS612X
ADS61B23
ADS61B23IRHBT
QFN-32
ADS61XX
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PDF
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Untitled
Abstract: No abstract text available
Text: CMOS STATIC RAM 1 MEG 128K x 8-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71124 In te g ra te d De v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JED E C revolutionary pinout (center power/G ND) for
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OCR Scan
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IDT71124
12/15/20ns
32-pin
IDT71124
576-bit
MO-061,
S5771
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PDF
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S0323
Abstract: No abstract text available
Text: 3.3V CMOS STATIC RAM 1 MEG 128K x 8 CENTER POWER & GROUND PINOUT PRELIMINARY IDT71V124SA FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise • Equal access and cycle times
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OCR Scan
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9/10/12/15/20ns
32-pin
400-mil
32pin
IDT71V124SA
IDT71V124
576-bit
200mV
71V124
300-mil
S0323
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PDF
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S0323
Abstract: IDT71024S70 K 3568
Text: CMOS STATIC RAM 1 MEG 128K x 8-BIT IDT71024S70 FEATURES: DESCRIPTION: • 1 2 8 K x 8 CM O S static RAM • Equal access and cycle times — Commercial: 70ns • Two Chip Selects plus one Output Enable pin • Bidirectional inputs and outputs directly TTL-compatible
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OCR Scan
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IDT71024S70
T71024
576-bit
MO-061,
S5771
S0323
IDT71024S70
K 3568
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PDF
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Untitled
Abstract: No abstract text available
Text: CMOS STATIC RAM 1 MEG 128KX 8-BIT IDT71024 Integrated D evice Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CM OS Static RAM • Equal access and cycle tim es — Military: 17/20/25ns — Com m ercial: 15/17/20ns _ • Two Chip Selects plus one O utput Enable (OE) pin
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OCR Scan
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128KX
IDT71024
17/20/25ns
15/17/20ns
32-pin
400mil
IL-STD-883,
IDT71024
576-bit
MIL-STD-883,
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PDF
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IDT71124
Abstract: 71124s12
Text: CMOS STATIC RAM 1 MEG 128K x 8-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71124 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise. • Equal access and cycle times
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Original
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IDT71124
12/15/20ns
32-pin
IDT71124
576-bit
200mV
400-mil
SO32-3)
71124s12
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PDF
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IDT71128
Abstract: No abstract text available
Text: CMOS STATIC RAM 1 MEG 256K x 4-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71128 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 256K x 4 advanced high-speed CMOS static RAM • JEDEC revolutionary pinput (center power/GND) for reduced noise. • Equal access and cycle times
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Original
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IDT71128
12/15/20ns
32-pin
IDT71128
576-bit
200mV
400-mil
SO32-3)
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PDF
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Untitled
Abstract: No abstract text available
Text: ADS61B23 www.ti.com SLAS582 – FEBRUARY 2008 12-BIT, 80-MSPS ADC WITH BUFFERED ANALOG INPUTS FEATURES 1 • • • • • • • • • • • • • • • • Maximum Sample Rate: 80 MSPS 12-bit Resolution with No Missing Codes Buffered Analog Inputs with
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Original
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ADS61B23
SLAS582
12-BIT,
80-MSPS
12-bit
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PDF
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Untitled
Abstract: No abstract text available
Text: 3.3V CMOS Static RAM 4 Meg 1M x 4-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V428S IDT71V428L OBSOLETE PART Description 1M x 4 advanced high-speed CMOS Static RAM JEDEC Center Power / GND pinout for reduced noise Equal access and cycle times — Commercial and Industrial: 10/12/15ns
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Original
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IDT71V428S
IDT71V428L
10/12/15ns
32-pin,
IDT71V428
304-bit
PDN-SR-0607.
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY IDT71V128 3.3V CMOS STATIC RAM 1 MEG 256K x 4-BIT REVOLUTIONARY PINOUT FEATURES: DESCRIPTION: • 256K x 4 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise. • Equal access and cycle times
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OCR Scan
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12/15/20ns
32-pin
IDT71V128
IDT71V128
576-bit
200mV
71V128
400-mil
SQ32-3)
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PDF
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Untitled
Abstract: No abstract text available
Text: CMOS STATIC RAM 1 MEG 128Kx 8-BIT IDT71024 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 ad v a n c e d h ig h -s p e e d C M O S s ta tic RAM • E qual a cc e s s and cycle tim e s — M ilitary: 1 5 /1 7/2 0/25 ns — C o m m e rc ia l: 1 2 /1 5 /1 7/2 0ns
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OCR Scan
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128Kx
IDT71024
IDT71024
MIL-STD-883,
400-mil
D32-2)
P32-3)
L32-2)
300-mil
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PDF
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