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    S0323 Price and Stock

    Omega Engineering CSS-03235-120V

    OMEGALUX CARTRIDGE HEATER WITH S
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    DigiKey CSS-03235-120V Bulk 1
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    Vox Power Ltd NEVO-600S-0323-DK000

    AC/DC CONVERTER 24V 12V 24V 450W
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    DigiKey NEVO-600S-0323-DK000 Box 15
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    Samtec Inc FFSD-07-S-03.23-01-S-N

    .050 X .050 C.L. FEMALE IDC ASSE
    Free Sample
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    DigiKey FFSD-07-S-03.23-01-S-N Bulk 1
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    Avnet Americas FFSD-07-S-03.23-01-S-N Bulk 1
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    Mouser Electronics FFSD-07-S-03.23-01-S-N
    • 1 $7.66
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    Newark FFSD-07-S-03.23-01-S-N Bulk 1
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    Master Electronics FFSD-07-S-03.23-01-S-N
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    Sager FFSD-07-S-03.23-01-S-N 1
    • 1 $7.66
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    Samtec Inc 6QDPS-032-30.0-TTR-TED-5

    0.635 MM Q2 SHIELDED HIGH-SPEED
    Free Sample
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    DigiKey 6QDPS-032-30.0-TTR-TED-5 Bulk
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    Samtec Inc 6QDPS-032-39.4-TBR-SBL-5-B

    0.635 MM Q2 SHIELDED HIGH-SPEED
    Free Sample
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    DigiKey 6QDPS-032-39.4-TBR-SBL-5-B Bulk
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    Find more S0323 price and stock on Findchips.com

    S0323 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: jdt Integrated Device Technology, Inc. 3.3V C M O S STATIC RAM 1 MEG 128K x 8) CENTER POWER & GROUND PINOUT PRELIMINARY IDT71V124SA FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed C M O S static RAM • JED EC revolutionary pinout (center power/GND) for


    OCR Scan     		IDT71V124SA 10/12/15/20ns 32-pin 400-mil 32pin IDT71V124 576-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 1 MEG 128K x 8-BIT IDT71024 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed C M O S static R AM • Equal access and cycle times — Military: 1 5 /1 7 /2 0 /2 5 n s — Com m ercial: 1 2 /1 5 /1 7/20n s


    OCR Scan     		IDT71024 7/20n MIL-STD-883, L32-2) 300-mil S032-2) 400-mil S032-3) 4A25771 PDF

    6116 CMOS RAM

    Abstract: 6116 static RAM chip 71V428 IDT71V428 IDT71V428L IDT71V428S
    Text: IDT71V428S IDT71V428L 3.3V CMOS Static RAM 4 Meg 1M x 4-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description 1M x 4 advanced high-speed CMOS Static RAM JEDEC Center Power / GND pinout for reduced noise Equal access and cycle times — Commercial and Industrial: 10/12/15ns


    Original     		IDT71V428S IDT71V428L 10/12/15ns 32-pin, IDT71V428 304-bit x4033 6116 CMOS RAM 6116 static RAM chip 71V428 IDT71V428L IDT71V428S PDF

    SO32-3

    Abstract: IDT71024 IDT71024S70 S0323
    Text: IDT71024S70 CMOS STATIC RAM 1 MEG 128K x 8-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 CMOS static RAM • Equal access and cycle times — Commercial: 70ns • Two Chip Selects plus one Output Enable pin • Bidirectional inputs and outputs directly TTL-compatible


    Original     		IDT71024S70 IDT71024 576-bit 200mV 300-mil SO32-2) 400-mil SO32-3) SO32-3 IDT71024S70 S0323 PDF

    s0324

    Abstract: No abstract text available
    Text: dt) 3.3V CMOS STATIC RAM 1 MEG 128K x 8-BIT) REVOLUTIONARY PINOUT PRELIMINARY IDT71V124 Integrated De vice Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JED E C revolutionary pinout (center power/G ND) for reduced noise.


    OCR Scan     		IDT71V124 12/15/20ns Plastic32-pin 32-pin IDT71V124 576-bit 71V124 400-mil S032-3) s0324 PDF

    y 4m

    Abstract: 641BL
    Text: CM O S STATIC RAM 1 MEG 128K x 8-BIT IDT71024 FEATURES: DESCRIPTION: • 128K x 8 a d v a n ce d h ig h -s p e e d C M O S s ta tic R AM T h e ID T 7 1 0 2 4 is a 1 ,0 4 8 ,5 7 6 -b it h ig h -s p e e d sta tic R AM o rg a n iz e d a s 128K x 8. It is fa b ric a te d u sing ID T ’s highp e rfo rm a n c e , h ig h -re lia b ility C M O S te c h n o lo g y. T h is sta teo f-th e -a rt te c h n o lo g y , c o m b in e d w ith in n o va tive c irc u it d esign


    OCR Scan     		IDT71024 300-mil 400-m MIL-STD-883, L32-2) y 4m 641BL PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS STATIC RAM 4 MEG 1Mx 4-BIT Integrated Device Technology, Inc. ADVANCE INFORMATION IDT71V428S IDT71V428L FEATURES: DESCRIPTION: • 1M x 4 advanced high-speed C M O S Static RAM • JEDEC Center Power / GND pinout for reduced noise • Equal access and cycle times


    OCR Scan     		IDT71V428S IDT71V428L 10/12/15ns 32-pin, T71V428 304-bit IDT71V428 71V428 400-mil S032-3) PDF

    CHN 920

    Abstract: 71024S15 chn 830
    Text: jdt CMOS STATIC RAM 1 MEG 128Kx 8-BIT) IDT71024 ïite g ia te d D ev ize T ech n o logy, ï i c . FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CM O S static RAM • Com m ercial (0° to 70°C), Industrial (-40° to 85°C) and M ilitary (-55° to 125°C) tem perature options


    OCR Scan     		128Kx IDT71024 15/17/20/25ns 15/20ns 12/15/17/20ns IL-STD-883, T71024 576-bit MS-027, CHN 920 71024S15 chn 830 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADS61B23 w w w .t i.c om SLAS582 – FEBRUARY 2008 12-BIT, 80-MSPS ADC WITH BUFFERED ANALOG INPUTS FEATURES 1 • • • • • • • • • • • • • • • • Maximum Sample Rate: 80 MSPS 12-bit Resolution with No Missing Codes Buffered Analog Inputs with


    Original     		ADS61B23 SLAS582 12-BIT, 80-MSPS 12-bit PDF

    IDT71128

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 1 MEG 256K x 4-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71128 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 256K x 4 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise. • Equal access and cycle times


    Original     		IDT71128 12/15/20ns 32-pin IDT71128 576-bit 200mV 400-mil SO32-3) PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS STATIC RAM 4 MEG 1Mx 4-BIT ADVANCE INFORMATION IDT71V428 Integrated Device Technology, inc. FEATURES: DESCRIPTION: • 1M x 4 advanced high-speed CMOS Static RAM • JEDEC Center Power / GND pinout for reduced noise • Equal access and cycle times


    OCR Scan     		IDT71V428 12/15/20ns 32-pin, IDT71V428 304-bit drw02 71V428 400-mil S032-3) PDF

    S0323

    Abstract: No abstract text available
    Text: Integrated Device Technology, Inc. VERY LOW POWER 3.3V CMOS FAST SRAM 1 MEG 128K x 8-BIT FEATURES: • 128K x 8 advanced high-speed CMOS Static RAM • Equal access and cycle times — Commercial: 20/25ns • True 3.3V design, not a re-characterized 5V device


    OCR Scan     		IDT713024SL 20/25ns S0323 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 1 MEG 128Kx 8-BIT ADVANCE INFORMATION IDT71024 Integrated D evice T ech nology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed C M O S static RAM • Equal access and cycle tim es — M ilitary: 20/25ns — C om m ercial: 15 /17ns


    OCR Scan     		128Kx IDT71024 20/25ns /17ns 32-pin T71024 576-bit 400-m D32-2) PDF

    ADS612X

    Abstract: ADS61B23 ADS61B23IRHBT QFN-32 ADS61XX
    Text: ADS61B23 www.ti.com SLAS582 – FEBRUARY 2008 12-BIT, 80-MSPS ADC WITH BUFFERED ANALOG INPUTS FEATURES 1 • • • • • • • • • • • • • • • • Maximum Sample Rate: 80 MSPS 12-bit Resolution with No Missing Codes Buffered Analog Inputs with


    Original     		ADS61B23 SLAS582 12-BIT, 80-MSPS 12-bit ADS612X ADS61B23 ADS61B23IRHBT QFN-32 ADS61XX PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 1 MEG 128K x 8-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71124 In te g ra te d De v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JED E C revolutionary pinout (center power/G ND) for


    OCR Scan     		IDT71124 12/15/20ns 32-pin IDT71124 576-bit MO-061, S5771 PDF

    S0323

    Abstract: No abstract text available
    Text: 3.3V CMOS STATIC RAM 1 MEG 128K x 8 CENTER POWER & GROUND PINOUT PRELIMINARY IDT71V124SA FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise • Equal access and cycle times


    OCR Scan     		9/10/12/15/20ns 32-pin 400-mil 32pin IDT71V124SA IDT71V124 576-bit 200mV 71V124 300-mil S0323 PDF

    S0323

    Abstract: IDT71024S70 K 3568
    Text: CMOS STATIC RAM 1 MEG 128K x 8-BIT IDT71024S70 FEATURES: DESCRIPTION: • 1 2 8 K x 8 CM O S static RAM • Equal access and cycle times — Commercial: 70ns • Two Chip Selects plus one Output Enable pin • Bidirectional inputs and outputs directly TTL-compatible


    OCR Scan     		IDT71024S70 T71024 576-bit MO-061, S5771 S0323 IDT71024S70 K 3568 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 1 MEG 128KX 8-BIT IDT71024 Integrated D evice Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CM OS Static RAM • Equal access and cycle tim es — Military: 17/20/25ns — Com m ercial: 15/17/20ns _ • Two Chip Selects plus one O utput Enable (OE) pin


    OCR Scan     		128KX IDT71024 17/20/25ns 15/17/20ns 32-pin 400mil IL-STD-883, IDT71024 576-bit MIL-STD-883, PDF

    IDT71124

    Abstract: 71124s12
    Text: CMOS STATIC RAM 1 MEG 128K x 8-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71124 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise. • Equal access and cycle times


    Original     		IDT71124 12/15/20ns 32-pin IDT71124 576-bit 200mV 400-mil SO32-3) 71124s12 PDF

    IDT71128

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 1 MEG 256K x 4-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71128 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 256K x 4 advanced high-speed CMOS static RAM • JEDEC revolutionary pinput (center power/GND) for reduced noise. • Equal access and cycle times


    Original     		IDT71128 12/15/20ns 32-pin IDT71128 576-bit 200mV 400-mil SO32-3) PDF

    Untitled

    Abstract: No abstract text available
    Text: ADS61B23 www.ti.com SLAS582 – FEBRUARY 2008 12-BIT, 80-MSPS ADC WITH BUFFERED ANALOG INPUTS FEATURES 1 • • • • • • • • • • • • • • • • Maximum Sample Rate: 80 MSPS 12-bit Resolution with No Missing Codes Buffered Analog Inputs with


    Original     		ADS61B23 SLAS582 12-BIT, 80-MSPS 12-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS Static RAM 4 Meg 1M x 4-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V428S IDT71V428L OBSOLETE PART Description 1M x 4 advanced high-speed CMOS Static RAM JEDEC Center Power / GND pinout for reduced noise Equal access and cycle times — Commercial and Industrial: 10/12/15ns


    Original     		IDT71V428S IDT71V428L 10/12/15ns 32-pin, IDT71V428 304-bit PDN-SR-0607. PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY IDT71V128 3.3V CMOS STATIC RAM 1 MEG 256K x 4-BIT REVOLUTIONARY PINOUT FEATURES: DESCRIPTION: • 256K x 4 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise. • Equal access and cycle times


    OCR Scan     		12/15/20ns 32-pin IDT71V128 IDT71V128 576-bit 200mV 71V128 400-mil SQ32-3) PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 1 MEG 128Kx 8-BIT IDT71024 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 ad v a n c e d h ig h -s p e e d C M O S s ta tic RAM • E qual a cc e s s and cycle tim e s — M ilitary: 1 5 /1 7/2 0/25 ns — C o m m e rc ia l: 1 2 /1 5 /1 7/2 0ns


    OCR Scan     		128Kx IDT71024 IDT71024 MIL-STD-883, 400-mil D32-2) P32-3) L32-2) 300-mil PDF