7N10 Search Results

7N10 Result Highlights (5)

Part	Manufacturer	Description
H7N1005LD-E	Renesas Electronics Corporation	Nch Single Power Mosfet 100V 15A 110Mohm LDPAK(L)/To-262
H7N1004LSTR-E	Renesas Electronics Corporation	Nch Single Power Mosfet 100V 30A 35Mohm LDPAK(S)-(1)/To-263
H7N1004FM-E	Renesas Electronics Corporation	Nch Single Power Mosfet 100V 25A 35Mohm To-220Fm
H7N1005DSTR-E	Renesas Electronics Corporation	Nch Single Power Mosfet 100V 12A 110Mohm DPAK(S)/To-252
H7N1004AB-E	Renesas Electronics Corporation	Nch Single Power Mosfet 100V 30A 35Mohm To-220Ab

7N10 Price and Stock

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STMicroelectronics STL7N10F7 MOSFET N-CH 100V POWERFLAT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STL7N10F7	Digi-Reel	18,431		1	1 $1.58 10 $0.998 100 $1.58 1000 $0.47714 10000 $0.47714	Buy Now
	STL7N10F7	Cut Tape	18,431		1	1 $1.58 10 $0.998 100 $1.58 1000 $0.47714 10000 $0.47714	Buy Now
	STL7N10F7	Reel	15,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.4189	Buy Now
Newark	STL7N10F7	Cut Tape	1,055		1	1 $1.31 10 $0.902 100 $0.646 1000 $0.494 10000 $0.494	Buy Now
STMicroelectronics	STL7N10F7		1,656		1	1 $1.5 10 $0.95 100 $0.64 1000 $0.51 10000 $0.51	Buy Now
TME	STL7N10F7				1	1 $0.783 10 $0.668 100 $0.595 1000 $0.48 10000 $0.423	Get Quote
ComSIT USA	STL7N10F7		3,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Avnet Silica	STL7N10F7			17 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STL7N10F7			27 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Diodes Incorporated AP2127N-1.0TRG1 IC REG LINEAR 1V 300MA SOT23
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AP2127N-1.0TRG1	Digi-Reel	2,975		1	1 $0.47 10 $0.278 100 $0.1705 1000 $0.11067 10000 $0.11067	Buy Now
	AP2127N-1.0TRG1	Cut Tape	2,975		1	1 $0.47 10 $0.278 100 $0.1705 1000 $0.11067 10000 $0.11067	Buy Now
Avnet Americas	AP2127N-1.0TRG1	Reel		20 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.0516	Buy Now
TME	AP2127N-1.0TRG1				5	1 - 10 $0.151 100 $0.09 1000 $0.079 10000 $0.071	Get Quote
Infineon Technologies AG IPB017N10N5ATMA1 MOSFET N-CH 100V 180A TO263-7
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPB017N10N5ATMA1	Digi-Reel	2,697		1	1 $6.83 10 $4.615 100 $6.83 1000 $2.8955 10000 $2.8955	Buy Now
	IPB017N10N5ATMA1	Cut Tape	2,697		1	1 $6.83 10 $4.615 100 $6.83 1000 $2.8955 10000 $2.8955	Buy Now
	IPB017N10N5ATMA1	Reel	2,000		1,000	1 - 10 - 100 - 1000 $2.8955 10000 $2.8955	Buy Now
Avnet Americas	IPB017N10N5ATMA1	Ammo Pack		16 Weeks, 4 Days	1	1 $6.58 10 $4.79 100 $3.49 1000 $3.49 10000 $3.49	Buy Now
	IPB017N10N5ATMA1	Reel		18 Weeks	1,000	1 - 10 - 100 - 1000 $3.2198 10000 $3.2198	Buy Now
Newark	IPB017N10N5ATMA1	Cut Tape	556		1	1 $3.95 10 $3.63 100 $3.35 1000 $3.11 10000 $3.11	Buy Now
Ameya Holding Limited	IPB017N10N5ATMA1		500			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip One Stop	IPB017N10N5ATMA1	Cut Tape	3,670			1 $5.58 10 $3.95 100 $3.67 1000 $3.32 10000 $3.32	Buy Now

EBV Elektronik	IPB017N10N5ATMA1		2,000	19 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	IPB017N10N5ATMA1		2,000		1	1 - 10 - 100 - 1000 $4.46 10000 $4.13	Buy Now
Win Source Electronics	IPB017N10N5ATMA1		29,500			1 - 10 $6.1357 100 $4.0905 1000 $4.0905 10000 $4.0905	Buy Now
Infineon Technologies AG IPT017N10NF2SATMA1 MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPT017N10NF2SATMA1	Cut Tape	1,625		1	1 $5.09 10 $3.385 100 $5.09 1000 $2.00696 10000 $2.00696	Buy Now
	IPT017N10NF2SATMA1	Digi-Reel	1,625		1	1 $5.09 10 $3.385 100 $5.09 1000 $2.00696 10000 $2.00696	Buy Now
Mouser Electronics	IPT017N10NF2SATMA1		1,014			1 $4.66 10 $3.17 100 $2.31 1000 $2.05 10000 $1.95	Buy Now
Newark	IPT017N10NF2SATMA1	Cut Tape	28		1	1 $5.22 10 $3.67 100 $2.77 1000 $2.5 10000 $2.5	Buy Now
EBV Elektronik	IPT017N10NF2SATMA1			13 Weeks	1,800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics STU7N105K5 MOSFET N-CH 1050V 4A IPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STU7N105K5	Tube	1,303		1	1 $3.77 10 $3.77 100 $1.79933 1000 $1.40486 10000 $1.24887	Buy Now
STMicroelectronics	STU7N105K5				1	1 $3.48 10 $1.72 100 $1.57 1000 $1.35 10000 $1.35	Buy Now
TME	STU7N105K5				1	1 $2.63 10 $2.37 100 $2.09 1000 $1.75 10000 $1.75	Get Quote
Avnet Silica	STU7N105K5			15 Weeks	75	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STU7N105K5			15 Weeks	75	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Find more 7N10 price and stock on Findchips.com

7N10 Datasheets (6)

Part	Manufacturer	Description	Datasheet Type	PDF
7N-10.000MBP-T	TXC	Crystals, Oscillators, Resonators - Oscillators - XTAL OSC TCXO 10.0000MHZ CMOS	Original	PDF
7N10070005	TXC	XTAL OSC TCXO 10.0MHZ CMOS	Original	PDF
7N10LE	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
7N10LE	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
7N10LESM	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
7N10LESM9A	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF

7N10 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 7N10 Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe	Original	QW-R502-394	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 7N10 Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe	Original	QW-R502-394	PDF
7n10l Abstract: UTC 7N10G-AA3-R 7n10 Text: UNISONIC TECHNOLOGIES CO., LTD 7N10 Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe	Original	QW-R502-394 7n10l UTC 7N10G-AA3-R 7n10	PDF
7N10 Abstract: UTC 7N10G-AA3-R 39-4B Text: UNISONIC TECHNOLOGIES CO., LTD 7N10 Preliminary Power MOSFET 100V N-CHANNEL MOSFET DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power FET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe and	Original	QW-R502-394 7N10 UTC 7N10G-AA3-R 39-4B	PDF
7N10 Abstract: UTC 7N10G-AA3-R Text: UNISONIC TECHNOLOGIES CO., LTD 7N10 Preliminary Power MOSFET 100V N-CHANNEL MOSFET DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power FET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe and	Original	QW-R502-394 7N10 UTC 7N10G-AA3-R	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 7N10 Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET  1 DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe	Original	OT-223 O-252 O-251 QW-R502-394	PDF
7N10 Abstract: UTC 7N10G-AA3-R Text: UNISONIC TECHNOLOGIES CO., LTD 7N10 Preliminary Power MOSFET 100V N-CHANNEL MOSFET DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power FET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe and	Original	QW-R502-394 7N10 UTC 7N10G-AA3-R	PDF
7n10l Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 7N10 Preliminary Power MOSFET 7 Amps, 100 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power FET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe and	Original	QW-R502-394 7n10l	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 7N10Z Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N10Z is an N-Channel enhancement mode power MOSFET providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10Z uses planar	Original	7N10Z 7N10Z QW-R502-762	PDF
7n10l Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 7N10 Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe	Original	OT-223 O-252D O-251 O-252 QW-R502-394 7n10l	PDF
7n10l Abstract: 7n10le RFD7N10LESM AN7254 AN7260 RFD7N10LE RFD7N10LESM9A TB334 Text: 7N10LE, 7N10LESM Data Sheet Title FD7 0L, D7 0LS bt A, 0V, 00 m, an, gic vel, wer OSTs utho October 1999 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs Features These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes	Original	RFD7N10LE, RFD7N10LESM 7n10l 7n10le RFD7N10LESM AN7254 AN7260 RFD7N10LE RFD7N10LESM9A TB334	PDF
7n10l Abstract: RFD7N10LESM 7n10le AN7254 AN7260 RFD7N10LE RFD7N10LESM9A TB334 Text: 7N10LE, 7N10LESM Data Sheet 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum	Original	RFD7N10LE, RFD7N10LESM 7n10l RFD7N10LESM 7n10le AN7254 AN7260 RFD7N10LE RFD7N10LESM9A TB334	PDF
2N1025 Abstract: 2N1026 2N1469 2N327A Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N935 — 2N936 — 2N937 — 2N938 — 2N939 — 2N940 — GENERAL PURPOSE SILICON EPITAXIAL JUNCTION PNP TRANSISTORS 2N327A 2N328A 2N329A	Original	2N935 2N936 2N937 2N938 2N939 2N940 2N327A 2N328A 2N329A 2N1025 2N1025 2N1026 2N1469 2N327A	PDF
7N10 Abstract: ZXMN10A07Z ZXMN10A07ZTA mosfet structure Text: ZXMN10A07Z 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY BR DSS=100V; RDS(ON)=1 ; D=1.15A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low	Original	ZXMN10A07Z ZXMN10A07ZTA 7N10 ZXMN10A07Z ZXMN10A07ZTA mosfet structure	PDF

7n10l Abstract: 7n10le pspice model for ttl AN7254 AN7260 RFD7N10LE RFD7N10LESM RFD7N10LESM9A TB334 Text: 7N10LE, 7N10LESM Data Sheet 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum	Original	RFD7N10LE, RFD7N10LESM 7n10l 7n10le pspice model for ttl AN7254 AN7260 RFD7N10LE RFD7N10LESM RFD7N10LESM9A TB334	PDF
SOT89 MARKING CODE Abstract: No abstract text available Text: A Product Line of Diodes Incorporated ZXMN10A07Z ADVANCE INFORMATION 100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary Features and Benefits V BR DSS RDS(on) Max 100V 700mΩ @ VGS = 10V 900mΩ @ VGS = 6V • • • • • • • ID max	Original	ZXMN10A07Z AEC-Q101 DS33565 SOT89 MARKING CODE	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF
7N10 Abstract: ZXMN10A07Z ZXMN10A07ZTA Text: ZXMN10A07Z 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=100V : RDS(on)=0.7 ; ID=1.4A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes	Original	ZXMN10A07Z ZXMN10A07ZTA 7N10 ZXMN10A07Z ZXMN10A07ZTA	PDF
Untitled Abstract: No abstract text available Text: 7N10F7 N-channel 100 V, 0.027 Ω typ., 7 A STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 3.3x3.3 package Datasheet - production data Features 1 2 Order code VDS RDS on max ID 7N10F7 100 V 0.035 Ω 7A • N-channel enhancement mode 3 • Lower RDS(on) x area vs previous generation	Original	STL7N10F7 DocID025972	PDF
Untitled Abstract: No abstract text available Text: • 430Z271 0054745 0T2 fKj HARRIS V D SEMICONDUCTOR February1994 ■ HAS 7N10LE, 7N10LESM 7N10LE 7A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs MegaFETs Features Packaging • 7A, 100V JEDEC TO-220AB	OCR Scan	430Z271 RFD7N10LE, RFD7N10LESM RFP7N10LE O-220AB O-251AA RFD7N10LESM RFP7N10LE 184e-9	PDF
Untitled Abstract: No abstract text available Text: 7N10LE, 7N10LESM S em iconductor April 1999 Data Sheet 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives	OCR Scan	RFD7N10LE, RFD7N10LESM 184e-9 1e-30 13e-3 74e-8) 45e-3 68e-5) 75e-3	PDF
sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan		PDF
RCA SK CROSS-REFERENCE Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1 Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered	OCR Scan		PDF
diode gee a9 Abstract: HTC one m7 Text: SPP 7N10L Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ñ DS on 0.026 fl 47 A b 100 V • Logic Level	OCR Scan	47N10L SPP47N10L SPB47N10L P-T0220-3-1 Q67040-S4177 P-T0263-3-2 Q67040-S4176 S35bQ5 Q133777 SQT-89 diode gee a9 HTC one m7	PDF

7N10 Search Results

7N10 Result Highlights (5)

7N10 Price and Stock

STMicroelectronics STL7N10F7

Diodes Incorporated AP2127N-1.0TRG1

Infineon Technologies AG IPB017N10N5ATMA1

Infineon Technologies AG IPT017N10NF2SATMA1

STMicroelectronics STU7N105K5

7N10 Datasheets (6)

7N10 Datasheets Context Search

Untitled

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7n10l

7N10

7N10

Untitled

7N10

7n10l

Untitled

7n10l

7n10l

7n10l

2N1025

7N10

7n10l

SOT89 MARKING CODE

7N60B equivalent

7N10

Untitled

Untitled

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sx3704

RCA SK CROSS-REFERENCE

diode gee a9