Untitled
Abstract: No abstract text available
Text: 7qgqg37 jp g a b o q 5 ^ P 3 3 - I S SGS-THOMSON BUR21 ULiOTT^DiflDOl S G S-IHOMSOM 3 0 EL J> HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR ADVANCE DATA HIGH CURRENT HIGH SWITCHING SPEED HIGH POWER GOOD SOA GOOD RBSOA INTERNAL SCHEMATIC DIAGRAM BO- DESCRIPTION
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7qgqg37
BUR21
BUR21
10MHz
300ns,
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transistor f423
Abstract: sgsf323
Text: 7qgqg37 o o s g is q ^ T * 3 M S SGSF323/IF323 SGSF423/IF423 S G S -T H O M S O N !D=D S G S-THOMSON 30E P FASTSWITCH HOLLOW-EMITTER NPN TRANSISTORS • HIG H S W ITC H IN G SPEED NPN POWER TRANSISTORS ■ HOLLOW EMITTER TECHNOLOGY ■ FOR FAST SWITCHING ■ HIGH VOLTAGE FOR OFF-LINE APPLICA
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7qgqg37
SGSF323/IF323
SGSF423/IF423
70kHz
500ms
transistor f423
sgsf323
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Untitled
Abstract: No abstract text available
Text: 5 bE D ^7# • 7qgqg37 0040412 SOS ■ S 6 T H 7~ V ? ~ ? / SGS-THOMSON M54HC4072 M74HC4072 S 6 S-THÔMS0N DUAL 4-INPUT OR GATE ■ HIGH SPEED tpo = 11 ns TYP. at Vcc = 5V ■ LOW POWER DISSIPATION ICC = 1 i*A (MAX.) at TA = 25°C ■ HIGH NOISE IMMUNITY
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7qgqg37
M54HC4072
M74HC4072
4072B
M54HC4072
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NPN Transistor 1A 400V
Abstract: 405a BUF405 BUF405A 02JJ
Text: 7^5^537 00555^5 b • T~-3>3~1^ BUF405 BUF405A SGS-THOMSON ¡[L iC T l iD i S Q S-THOMSON 30 E ]> FASTSWITCH EASY-TO-DRIVE ETD NPN TRANSISTORS P R EL IM IN A R Y DATA ■ HIGH SWITCHING SPEED NPN POWER TRANSISTORS ■ EASY TO DRIVE ■ HIGH VOLTAGE FOR OFF-LINE APPLICA
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-33-l?
BUF405
BUF405A
100KHZ
100KHz
BUF405/405A
NPN Transistor 1A 400V
405a
BUF405
BUF405A
02JJ
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Untitled
Abstract: No abstract text available
Text: QQgcm P5 s • H ~ - 3 3 - \ 3 r z 7 ^ 7 S C S -TH H O O M M S O N s [ L ir a » ! ! # S 6 S-THOMSON 2N 6497 2 N 6 4 9 8 -2 N 6 4 9 9 30E T> HIGH VOLTAGE POWER SWITCH DESCRIPTION The 2N6497/98/99 are silicon multiepitaxial mesa NPN transistors in Jedec TO-220 plastic package
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2N6497/98/99
O-220
2N6497
2N6498
2N6499
G-S704
G-S706
2N6497/8/9
7qgqg37
T-33-73
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Untitled
Abstract: No abstract text available
Text: .152^237 ooaTabi a • " IT - 3 3 - 1 3 SCS-THOMSON RfflDOœHLIÛTri^OKlDOi S G S-THOMSON 2N5875-2N5876 2N5877-2N5878 3DE D SILICON HIGH POWER TRANSISTORS D ESCRIPTIO N The 2N5877 and 2N5878 are silicon epitaxial-base NPN power transistors in Jedec TO-3 metal case.
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2N5875-2N5876
2N5877-2N5878
2N5877
2N5878
2N5875
2N5876
hFE-10
2N5875/6/7/8
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Untitled
Abstract: No abstract text available
Text: _ • /= T ^ 7 # 7 g g I B 37 0 0 5 5 ^ 7 3 I ■ _ S G S -T H O M S O N ^D g^ [llLlCTi©lMia©i S G S-THOMSON BUX42 3GE D HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR DESC RIPTIO N The BUX42 is a silicon multiepitaxial planar NPN
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BUX42
BUX42
T-33-13
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