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    2N5876 Search Results

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    2N5876 Price and Stock

    Microchip Technology Inc 2N5876

    PNP POWER TRANSISTOR SILICON AMP
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    Mouser Electronics 2N5876
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    Newark 2N5876 Bulk 100
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    Onlinecomponents.com 2N5876
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    NAC 2N5876 Tray 7
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    Master Electronics 2N5876
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    Motorola Mobility LLC 2N5876

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    Motorola Semiconductor Products 2N5876

    Bipolar Junction Transistor, PNP Type, TO-3
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    Quest Components 2N5876 36
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    2N5876 1
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    Centralab Semiconductor (Globe Union) 2N5876

    Bipolar Junction Transistor, PNP Type, TO-3
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    Quest Components 2N5876 2
    • 1 $5.25
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    2N5876 Datasheets (35)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5876 Semelab Bipolar PNP Device in a Hermetically Sealed TO3 Metal Package - Pol=PNP / Pkg=TO3 / Vceo=80 / Ic=10 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N5876 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N5876 API Electronics Short form transistor data Short Form PDF
    2N5876 Central Semiconductor Complementary Silicon Power Transistors, TO-3 Scan PDF
    2N5876 Crimson Semiconductor EPITAXIAL BASE / PLANAR Transistors Scan PDF
    2N5876 Diode Transistor TO-3 / Various Transistor Selection Guide Scan PDF
    2N5876 Diode Transistor Transistor Short Form Data Scan PDF
    2N5876 Diode Transistor Silicon Transistors / TO-63 Transistors Scan PDF
    2N5876 Diode Transistor Transistor Short Form Data Scan PDF
    2N5876 Diode Transistor 35 to 500V Transistor Selection Guide Scan PDF
    2N5876 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N5876 General Transistor Power Transistor Selection Guide Scan PDF
    2N5876 Mospec POWER TRANSISTORS(10A,150W) - Pol=PNP / Pkg=TO3 / Vceo=80 / Ic=10 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=150 Scan PDF
    2N5876 Mospec Complementary Silicon High-Power Transistor Scan PDF
    2N5876 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N5876 Motorola The European Selection Data Book 1976 Scan PDF
    2N5876 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5876 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5876 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5876 Unknown Shortform Transistor PDF Datasheet Short Form PDF

    2N5876 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5875

    Abstract: 2N5876 2N5877 2N5878
    Text: SavantIC Semiconductor Product Specification 2N5875 2N5876 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·Complement to type 2N5877 2N5878 APPLICATIONS ·For general-purpose power amplifier and switching applications


    Original     		PDF 2N5875 2N5876 2N5877 2N5878 2N5875 2N5876 2N5878

    2N5876

    Abstract: No abstract text available
    Text: 2N5876 Complementary Silicon High-power Transistor 3.12 Transistors . 1 of 2 Home Part Number: 2N5876 Online Store 2N5876 Diodes C o m plem entary Silico n High- po w er Trans is t o r Transistors Enter code INTER3 at


    Original     		PDF 2N5876 com/2n5876 2N5876

    2N5878

    Abstract: 2N5877 2N5875 2N5876
    Text: SavantIC Semiconductor Product Specification 2N5877 2N5878 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·Complement to type 2N5875 2N5876 APPLICATIONS ·For general-purpose power amplifier and switching applications


    Original     		PDF 2N5877 2N5878 2N5875 2N5876 2N5877 2N5878 2N5876

    2n5876

    Abstract: No abstract text available
    Text: HIGH POWER SILICON PNP/NPN TRANSISTORS 2N5876 PNP 2N5878 (NPN) • High Power, Low VCE(Sat). • Hermetic TO3 (TO-204AA) Metal Package. • Ideally Suited For Power Amplifier And Switching Applications. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS


    Original     		PDF 2N5876 2N5878 O-204AA) 2N5876

    2N5876

    Abstract: No abstract text available
    Text: 2N5876 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N5876 O204AA) 31-Jul-02 2N5876

    2N5877

    Abstract: 2N5878 2N5875 2N5876
    Text: Inchange Semiconductor Product Specification 2N5877 2N5878 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Complement to type 2N5875 2N5876 APPLICATIONS ・For general-purpose power amplifier and switching applications


    Original     		PDF 2N5877 2N5878 2N5875 2N5876 2N5877 2N5878 2N5876

    2N5875

    Abstract: 2N5876 2N5877 2N5878
    Text: Inchange Semiconductor Product Specification 2N5875 2N5876 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Complement to type 2N5877 2N5878 APPLICATIONS ・For general-purpose power amplifier and switching applications


    Original     		PDF 2N5875 2N5876 2N5877 2N5878 2N5875 2N5876 2N5878

    Untitled

    Abstract: No abstract text available
    Text: 2N5876 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N5876 O204AA) 18-Jun-02

    2N5876

    Abstract: No abstract text available
    Text: ISCFdÈ‹¾Ñ ‹¾Ñ text/html About News keyword search: Contact Employment Site Home part number search: 2N5876 #23870 RFQ/Sample Package PNP Transistor Division Lawrence Datasheet (none) Mil-Spec Shipping (none) (none) Qual Data Contact Microsemi Maximum Electrical Rating


    Original     		PDF 2N5876 2N5876

    2n5878

    Abstract: 2N5876
    Text: HIGH POWER SILICON PNP/NPN TRANSISTORS 2N5876 PNP 2N5878 (NPN) • High Power, Low VCE(Sat). • Hermetic TO3 (TO-204AA) Metal Package. • Ideally Suited For Power Amplifier And Switching Applications. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS


    Original     		PDF 2N5876 2N5878 O-204AA) 2N5876 2N5878

    Untitled

    Abstract: No abstract text available
    Text: 2N5876 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N5876 O204AA) 16-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: HIGH POWER SILICON PNP/NPN TRANSISTORS 2N5876 PNP 2N5878 (NPN) • High Power, Low VCE(Sat). • Hermetic TO3 (TO-204AA) Metal Package. • Ideally Suited For Power Amplifier And Switching Applications. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS


    Original     		PDF 2N5876 2N5878 O-204AA) 2N5876

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    2u 62 diode

    Abstract: 2SC1115 bd313 KT808BM sdt7603 2u 87 diode 2u 45 diode diode 2U 66 bdy19
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V 8R CEO (A) Of) hFE fT 'CBO Max Max toN Max ON) Min (Hz) (A) (s) PD r (CE)ut Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15


    Original     		PDF BD610 BDS11 BDS14 2SD213 2N5006 2N5007 2N5623 2N5624 2SA746 2SA877 2u 62 diode 2SC1115 bd313 KT808BM sdt7603 2u 87 diode 2u 45 diode diode 2U 66 bdy19

    2N5876

    Abstract: 2N5875 2N5878 2N5877
    Text: ÆAMOS PEC COMPLEMENTARY SILICON PNP 2N5875 2N5876 HIGH-POWER TRANSISTORS General-purpose power amplifier and switching applications NPN 2N5877 2N5878 FEATURES: * Low Collector-Emitter Saturation Voltage v c b s a t = 1.0V Max.)@lc=5.0A * Execllent DC Current Gain hFE = 20 ~ 100 @ lc = 4.0 A


    OCR Scan     		PDF 2N5875 2N5877 2N5876 2N5878 2N5877 2N5878 2N5876,

    Untitled

    Abstract: No abstract text available
    Text: .152^237 ooaTabi a • " IT - 3 3 - 1 3 SCS-THOMSON RfflDOœHLIÛTri^OKlDOi S G S-THOMSON 2N5875-2N5876 2N5877-2N5878 3DE D SILICON HIGH POWER TRANSISTORS D ESCRIPTIO N The 2N5877 and 2N5878 are silicon epitaxial-base NPN power transistors in Jedec TO-3 metal case.


    OCR Scan     		PDF 2N5875-2N5876 2N5877-2N5878 2N5877 2N5878 2N5875 2N5876 hFE-10 2N5875/6/7/8

    l5 transistor PNP

    Abstract: 2N3792A 2N6330 PNP TRANSISTOR 2N3789 2N3790 2N4398 2N4901 2N4902 2N4903
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-3 PACKAGE DEVICE TYPE Vceo sus VOLTS Ic (max) AMPS PNP TO-3 2N3789 2N3790 2N3791A 2N3792A 2N4398 2N4399A 2N4901 2N4902 2N4903 2N5683A 2N5684A 2N5745A 2N5875 2N5876 2N5879 2N5880 2N5883 2N5884 2N6246 2N6247


    OCR Scan     		PDF 2N3789 2N3790 2N3791A 2N3792A 2N4398 2N4399A 2N4901 2N4902 2N4903 2N5683A l5 transistor PNP 2N6330 PNP TRANSISTOR

    2N5876

    Abstract: 2N5878 2N5875 2N5877
    Text: Datasheet c c v n iD i Semiconductor Corp. 2N5875 2N5876 PNP 2N5877 2N5878 NPN C O M P L EMENTARY SILICON POWER TRANSISTORS 145 A d a m s Avenue, Hauppauge, N Y 11788 U S A Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-3 CASE Manufacturers of World Class Discrete Semiconductors


    OCR Scan     		PDF 2N5875 2N5876 2N5877 2N5878 2N5875, 200mA

    2N5876

    Abstract: 2N5875
    Text: TYPES 2N587S, 2NS876 P-N-P SINGLE-DIFFUSED SILICON POWER TRANSISTORS • TYPES 2N5875, 2N5876 BULLETIN NO. OL-S 7111608, DECEMBER FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N5877, 2N5878 150 Watts at 25°C Case Temperature


    OCR Scan     		PDF 2N587S, 2NS876 2N5877, 2N5878 2N5875, 2N5876 2N5875

    2n5875 motorola

    Abstract: 2N5876 2N5878 2N5875 2N5877 2N5875 2N5876
    Text: M O T O R O L A SC XSTRS/R F - 3 3 - 7 3 1 EE D I b 3 b ? 2 5 M Q O Ö M S b S 2 | 1 7 = 3 3 -/3 PNP 2N5875, 2N5876 NPN 2N5877, 2N5878 MOTOROLA SEMICONDUCTOR TECHNICAL DATA COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS


    OCR Scan     		PDF 2N5875, 2N5876 2N5877, 2N5878 2n5875 motorola 2N5878 2N5875 2N5877 2N5875 2N5876

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    2N5866

    Abstract: 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447
    Text: NElil ENGLAND SEMICONDUCTOR bSbM ^a S'ìE D dogooss lc M AX — 2-50 A V ceo(sus) = 3 5-5 00 V fT = 0.2-50 MHz NPN TO-3 Case 803 Case 804 PN P Complé­ ment -r-33 -6( Icev @ V ce (mA @ V) Po @ TC = 25 °C (Watts) 025b@30 025b@30 025 @30 025b@30 75 75 75


    OCR Scan     		PDF 5-500V 2n1487 2n1488 2n1489 2n1490 5n5883 2n5886 2n5884 2n5929 2n5930" 2N5866 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE le MAX V c e o (SUS) = = TO-3 2-50A 35-500V NPN Power Transistors PNP VCEO (WS) 1C (max) M (A) hFE@ic/Vc* (min-max @ A/V) 40 55 40 55 6 6 6 6 15-45 0 1.5/4 15*4501.5/4 25-75 0 1.5/4 25-75 @1.5/4 40 60 140 60 80 5 15 10


    OCR Scan     		PDF 5-500V 2N3773 2N3788 2N3902 2N4070 2N4071 2N4347 2N4348 2N4913 2N1487

    transistor 40411

    Abstract: 2N5867 2N6258 40411 transistor 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442
    Text: PNP Compla•Typ«* HMnt V cextut ic Volts) Max IS/fe »M hn ® ic / m (Mln-Max @A/¥) (V@A/A) 3.0 @ 1.5/.3 3.0 @ 1.5/3 1 @ 1.5/.1 1 @ 1.5/.1 3.2@ .8/.08 3.5@ 1.5/4 3.5 @1.5/4 2.5 @1.5/4 2.5@ 1.5/4 4.0@ .8/4 .025*030 .025* @30 .025*@30 .025’ @30 .20* @30


    OCR Scan     		PDF TC-25Â 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442 2N4347 2N3715 2N3791 transistor 40411 2N5867 2N6258 40411 transistor 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442