Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E D • 7Rb4142 0017112 THS KM23C32000G CMOS MASK ROM 32M-BH 4M x8/2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Swltchable organization 4,194,304 x 8 (byte mode) 2,097,152 x 16 (word mode) • Fast access time: 150ns (max.)
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7Rb4142
KM23C32000G
32M-BH
150ns
44-pin,
KM23C32000G
7Tb4142
DD1711S
KM23C32000G)
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samsung km28C256
Abstract: KM28C256-15 KM28C256 KM28C256-20 KM28C256I-15 KM28C256I-20
Text: S A M S UN G E L E C T R O N I C S INC 7Rb4142 ODlk^OM 2 n b?E D KM28C256 CMOS EEPROM 3 2 K x 8 Bit CMOS Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Temperature Range — KM28C256: Commercial — KM28C256I: Industrial • Simple Byte Write & Page Write
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7Rb4142
KM28C256
32Kx8
KM28C256I:
64-byte
150ns
100/iAâ
5555H
samsung km28C256
KM28C256-15
KM28C256
KM28C256-20
KM28C256I-15
KM28C256I-20
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KS0065 332
Abstract: a 4504 KS0068 20405 lcd display M37D 4053 IC circuit diagram Digital Pulse Counter Two Digit fcd 5250 IC CHIP 5270 ks0065
Text: CMOS DIGITAL INTEGRATED CIRCUIT KS0068 DOT MATRIX LCD CONTROLLER & DRIVER The KS0068 is a dot matrix LCD driver & controller LSI which is fabricated by low power CMOS technology 100 QFP FUNCTION • Character type dot m atrix LCD driver & controller • Internal driver: 16 common and 60 segment signal output.
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KS0068
KS0068
32kinds
KS0068-00;
KS0068-00
D02D721
KS0068-00)
71bm4B
0Q2Q722
KS0065 332
a 4504
20405 lcd display
M37D
4053 IC circuit diagram
Digital Pulse Counter Two Digit
fcd 5250
IC CHIP 5270
ks0065
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sequential timer working
Abstract: rom 512x4 0011B KS57-series
Text: KS57C0208 Cl CM ELECTRONICS Mi crocontroll er DESCRIPTION The KS57C0208 single-chip 4-bit microcontroller is fabricated using an advanced CMOS process. With two 8-bit timer/counters, and 16 n-channel, open-drain I/O pins, the KS57C0208 offers an excellent design solution for a
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KS57C0208
KS57C0208
TCL01
24-SOP-375
32DLD
sequential timer working
rom 512x4
0011B
KS57-series
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syncronous
Abstract: KM741006J-10 256kx4 256Kx4 SRAM
Text: KM741006J 256Kx4 Syncronous SRAM 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES • Fast Cycle Time: 10, 12.5, 15ns Max. • Low Power Dissipation KM741006J-10: 190mA (Max.) KM741006J-12: 180mA (Max.) KM741006J-15: 150mA (Max.) • Single 5V ± 5% Power Supply
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KM741006J
256Kx4
KM741006J-10:
190mA
KM741006J-12:
180mA
KM741006J-15:
150mA
400mil
syncronous
KM741006J-10
256Kx4 SRAM
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GG3L
Abstract: 50K1J m0 85a diode diode D3B
Text: IRFW/IZ24A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175» «Operating Temperature Lower Leakage Current : 10 nA Max. @ VDS = 60V
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IRFW/IZ24A
12-PAK
7SL4142
3TD73
GG3L
50K1J
m0 85a diode
diode D3B
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Untitled
Abstract: No abstract text available
Text: KM741006J 256Kx4 Syncronous SRAM 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES GENERAL DESCRIPTION • Fast C y c le Time: 10, 12.5, 15ns Max. • Low Power Dissipation KM741006J-10: 190mA (Max.) KM741006J-12: 180mA (Max.) KM741006J-15: 150mA (Max.)
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KM741006J
256Kx4
KM741006J-10:
190mA
KM741006J-12:
180mA
KM741006J-15:
150mA
400mil
KM741006J
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Untitled
Abstract: No abstract text available
Text: K M 4 16 C 2 5 6 D T CMOS D R A M ELECTRONICS 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time
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256Kx16
416C256DT
b4142
003055b
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D KM48V512A/AL/ALL • TTbMlME DCISTMB 071 «SIICK CMOS DRAM 512K x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tR A C tC A C tR C KM48V512A/AL/ALL-7 70ns 20ns 130ns KM48V512A/AL/ALL-8
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KM48V512A/AL/ALL
KM48V512A/AL/ALL-7
130ns
KM48V512A/AL/ALL-8
150ns
cycle/16ms
cycle/128ms
cycle/128mLA
28-LEAD
71b4142
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Untitled
Abstract: No abstract text available
Text: KS7306 DIGITAL CAMERA PROCESSOR GENERAL DESCRIPTION KS7306 is a CCD digital signal processor. The electronic video signal that passed the color filter array CFA pattern of CCD is put to the process of dual correlation sampling and then converted to digital video signal by A/D converter.
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KS7306
KS7306
100-QFP-1414
25ZT1
03125Z
VID-97-D004
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Untitled
Abstract: No abstract text available
Text: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Process Technology : 0.6» • CMOS Organization : 64Kx8 - Power Supply Voltage : Single 5V • • 10% •• Low Data Retention Voltage : 2V Min ~ Three state output and TTL Compatible
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KM68512A
64Kx8
64Kx8
32-SOP,
32-TSOP
7Tb4142
525mil)
32-THlN
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Untitled
Abstract: No abstract text available
Text: KM44V16000AS CMOS D R AM ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref. , access time(-5, -6,
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KM44V16000AS
16Mx4
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Untitled
Abstract: No abstract text available
Text: SAMSUNG POWER SWITCH KA1L0680 FEATURES TO-3P - Precision fixed operating frequency 50KHz - Pulse by pulse over current limiting - Over load protection - Internal thermal shutdown function - Under voltage lockout - Internal high voltage sense FET - Soft start
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KA1L0680
50KHz)
7Rb4142
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Untitled
Abstract: No abstract text available
Text: KM732V589/L 32Kx32 Synchronous SRAM 32K X 32-Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. • • • • The KM732V589/L is a 1,048,576-bit Synchronous Static Random Access Memory designed for high 2 Stage Pipelined operation with 4 Burst
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KM732V589/L
32Kx32
32-Bit
KM732V589/L
576-bit
i486/Pentium
7Tb4142
0024D01
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Untitled
Abstract: No abstract text available
Text: KMM364E1600AK/AS KMM364E1680AK/AS DRAM MODULE KMM364E1600AK/AS & KMM364E1680AK/AS Fast Page with EDO Mode 16Mx64 DRAM DIMM based on 16Mx4, 4K & 8K Refresh, 5V FEATURES GENERAL DESCR IPTIO N CMOS 16Mx4bit DRAMs in SOJ/TSOP-II 400mii • Part Identification
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KMM364E1600AK/AS
KMM364E1680AK/AS
KMM364E1680AK/AS
16Mx64
16Mx4,
16Mx4bit
400mii
KMM364E1600AK
KMM364E1600AS
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E ]> • 7 T b 4 m 2 GG177EÔ ÔÛÛ KM741006J CMOS SRAM 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES GENERAL DESCRIPTION • Fast Access Time: 10, 12.5, 15ns Max. • Low Power Dissipation KM741006J-10: 190mA (Max.)
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GG177EÃ
KM741006J
KM741006J-10:
190mA
KM741006J-12:
180mA
KM741006J-15:
150mA
400mil
KM741006J
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Untitled
Abstract: No abstract text available
Text: KM416V1004BJ CMOS DRAM ELECTR ONICS 1M x16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM416V1004BJ
x16Bit
1Mx16
30bSS
40SOJ
7Rb4142
Q030b5t>
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Untitled
Abstract: No abstract text available
Text: KM44C4004B, KM44C4104B KM44V4004B, KM44V4104B CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM44C4004B,
KM44C4104B
KM44V4004B,
KM44V4104B
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lf7a
Abstract: No abstract text available
Text: SSP7N60A Advanced Power MOSFET FEATURES BVdss - 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 7 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 mA (Max.) @ V DS = 600V
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SSP7N60A
O-220
00M1N
DD3b33D
lf7a
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ssp7n60
Abstract: No abstract text available
Text: N-CHANNEL POWER MOSFETS SSP7N60/55 FEATURES • Lower R dsion • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
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SSP7N60/55
SSP7N60
SSP7N55
7Rb4142
ssp7n60
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KM44C16100AS
Abstract: No abstract text available
Text: K M 4 4 C 161 OOAS CMOS DRAM ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6, or -7 , package type(SOJ or
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16Mx4
KM44C16100AS
7Rb4142
KM44C16100AS
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Untitled
Abstract: No abstract text available
Text: KM736V689/L 64Kx36 Synchronous SRAM 64Kx36-Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION - Synchronous Operation. . 2 Stage Pipelined operation with 4 Burst. - On-Chip Address Counter. . Self-Timed Write Cycle. - On-Chip Address and Control Registers.
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KM736V689/L
64Kx36
64Kx36-Bit
100-TQFP-1420A
14ELECTRONICS
71b4145
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SSP5N90
Abstract: 250M
Text: N-CHANNEL POWER MOSFETS SSP5N90 FEATURES • • • • • • • TO-220 Lower Rds<on Improved Inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability
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SSP5N90
SSP5N90
0D26441*
7Rb4142
250M
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samsung VFD
Abstract: P80-P82 KS57C7002
Text: KS57C7002 ELECTRONICS Microcontroller DESCRIPTION The KS57C7002 single-chip 4-bit microcontroller is fabricated using an advanced CMOS process. With VFD direct-drive ports, comparator, 8-bit serial I/O interface, 8-bit timer/counter, watchdog timer, and digital I/O, the
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KS57C7002
KS57C7002
16-bit
b4142
44-QFP-1010B
samsung VFD
P80-P82
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