IRFP150
Abstract: C4023 GC527 IRFP150FI c2814 TC08 Tc03s
Text: un TYPE IRFP150 IRFP150FI 7 ^ 5 3 7 00457E7 235 • SGTH SGS-THOMSON IRFP150 IRFP150FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V d ss RüS on Id 100 V 100 V < 0.055 Q < 0.055 n 40 A 23 A . Q . . TYPICAL RDS(on) = 0.035 AVALANCHE RUGGED TECHNOLOGY
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IRFP150
IRFP150FI
IRFP150
IRFP150FI
IRFP150/FI
7TSTS37
00MS732
C4023
GC527
c2814
TC08
Tc03s
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Untitled
Abstract: No abstract text available
Text: un TYPE IRFP150 IRFP150FI 7 ^ 5 3 7 00457E7 235 • SGTH SGS-THOMSON IRFP150 IRFP150FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V d ss RüS on Id 100 V 100 V < 0.055 Q < 0.055 n 40 A 23 A . Q . . TYPICAL RDS(on) = 0.035 AVALANCHE RUGGED TECHNOLOGY
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IRFP150
IRFP150FI
00457E7
IRFP150/FI
7TE1S37
00M5732
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Untitled
Abstract: No abstract text available
Text: 3DE D f Z 7 ^ 7 # • S G 7^237 S - T H O s M 0030^01 fi ■ S O N fL K g T F lO K i B C 3 9 3 S G S-THOMSON HIGH VOLTAGE AMPLIFIER DESCRIPTIO N The BC393 is a silicon planar epitaxial PNP trans istor in Jedec TO-18 metal case, designed for ge neral purpose high-voltage and video amplifier ap
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BC393
BC394.
7TE1S37
BC393
T-31-19
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON ST9020 ST9027, ST9028 IL[ 12/16K ROM HCM O S MCUs Register oriented 8/16 bit CORE with RUN, WFI and HALT modes Minimum instruction cycle time : 500ns 12MHz internal Internal Memory: ROM RAM ST9020 12K ST9027 16K 256 ST9028 16K 256 224 general purpose registers available as RAM,
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ST9020
ST9027,
ST9028
12/16K
500ns
12MHz
ST9027
PLCC44
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ah rzj
Abstract: 1N914 M28F256 Scans-005192 A0-A14
Text: M28F256 256K 32K x 8, Chip Erase FLASH MEMORY • FAST ACCESS TIME: 90ns • LOW POWER CONSUMPTION - Standby Current: 100pA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMMING TIME 10us (PRESTO F ALGORITHM) ■ ELECTRICAL CHIP ERASE IN 1s RANGE
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M28F256
100pA
M28F256
su18/20
PLCC32
PLCC32
ah rzj
1N914
Scans-005192
A0-A14
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