Untitled
Abstract: No abstract text available
Text: SEE P • 7^2^237 003fl23fl I? 3aT ■ S G T H SGS-THOMSON MK62940 m S 6 S- THOMSON VERY FAST CMOS 32K x 9 CACHE BRAM ADVANCE DATA ■ 32Kx 9 CMOS SYNCHRONOUS BURST SRAM ■ FAST CYCLE TIMES: 25, 30ns ■ FAST ACCESS: 19, 24ns Max ■ ON-BOARD BURST COUNTER
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003fl23fl
MK62940
AO-A14
T-46-23-13
BWRK940
7TERE37
PLCC44
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Untitled
Abstract: No abstract text available
Text: 5 S C S -T H O M S O N iH[ Î. SD4013 RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS P RE LIM IN A R Y DATA REFRACTORY/GOLD METALLIZATION INTERNAL INPUT MATCHING METAL/CERAMIC PACKAGE EMITTER BALLASTED 20:1 VSWR CAPABILITY Pout = 25 W MIN. WITH 9 dB GAIN
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SD4013
SD4013
G0707Ã
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25C02
Abstract: memory chip st24c02 ST24C02 ST24W02 ST25C02 ST25W02 st24W02 st
Text: 5 Ï. SGS-THOMSON IM lD g (Ô IlL I(g ra R !lD (g S ST24C02, ST25C02 ST24W02, ST25W02 SERIAL A CC ESS 2K (256 x 8) EEPROM 1 MILLION ERASE/WRITE CYCLES with 10 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: - 3V to 5.5V for ST24x02 versions - 2.5V to 5.5V for ST25x02 versions
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ST24C02,
ST25C02
ST24W02,
ST25W02
ST24x02
ST25x02
ST24W02
ST24/25C02
ST24/25W02.
25C02
memory chip st24c02
ST24C02
ST25C02
ST25W02
st24W02 st
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mwsl
Abstract: M28F210 M28F220 TSOP56
Text: SGS-THOMSON M28F210 M28F220 iìain e[R ì(S ig n ig i5 ìrrsìiò )iM [i(6 g 2 Megabit (x8 or x16, Block Erase) FLASH MEMORY PRELIM INARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZ E PLASTIC PACKAGES TSOP56 and S044 MEMORY ER A SE in BLO CKS - One 16K Byte or 8K Word Boot Block (top or
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M28F210
M28F220
44-tt
TSOP56
TSOP56
20/25mATypical
7T2T237
M28F210,
mwsl
M28F220
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SGS M27C2001
Abstract: B2A PCB Hex 1N914 IA10 M27C2001 M27V201 PLCC32 TSOP32
Text: rZ J ^ 7 M . S C S -T H O M S O N M27V201 6 » iio » [iiL i g ? [g ( B R !io ( g i LOW VOLTAGE 2 Megabit (256K x 8) UV EPROM and OTP ROM • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ ACCESS TIME: 200 and 250ns ■ LOW POWER ’’CMOS" CONSUMPTION:
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M27V201
250ns
LCCC32W,
PLCC32
TSOP32
24sec.
M27V201
M27C2001
LCCC32W
PLCC32
SGS M27C2001
B2A PCB Hex
1N914
IA10
TSOP32
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