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Abstract: No abstract text available
Text: /HWWHU 6\PEROV DQG 7HUPV XVLQJ , & DQG ,(9 D 0D[LPXP DFFHOHUDWLRQ XQGHU YLEUDWLRQ ,&(75,3 0D[ ,&( WR WULS (5525 6.LL3 E :LGWK RI WKH PRGXOH EDVH ,&0 3HDN FROOHFWRU FXUUHQW % 7ZRSXOVH EULGJH FRQQHFWLRQ ,&S 1RQUHSHWLWLYH SHDN FROOHFWRU FXUUHQW
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bss223pw
Abstract: No abstract text available
Text: User's Guide SLUU446A – June 2011 – Revised September 2011 EV2400 EVM Interface Board This user's guide describes the function and operation of the EV2400 evaluation module interface board. A complete description, as well as the bill of materials and schematic are included.
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SLUU446A
EV2400
bss223pw
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tl4311
Abstract: SOP23-5 2N4920 LM337B uc3842a uc3842b MGB20N40CLT4 sg3526 bc558b TO-266AA mje150
Text: SG388CH/D 2000 4 2 SG388CH/D 2000 3 2 SCILLC,2000 © 1999 “” http://onsemi.com.cn SCI LLC ./012 !"#$%&'()*+,%?./14*+=* )NO @ A L M N O
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SG388CH/D
r14525
SG388CH/D
tl4311
SOP23-5
2N4920
LM337B
uc3842a uc3842b
MGB20N40CLT4
sg3526
bc558b
TO-266AA
mje150
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MMBD2104
Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a
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BAS32,
BAS45,
BAV105
LL4148,
LL4448
BB241
BB249
LL914
LL4150,
MMBD2104
Transistor NEC 05F
hp2835 diode
ZENER DIODE t2d
what is the equivalent of ZTX 458 transistor
MMBD2103
T2D DIODE 3w
T2D 8N
2n2222 as equivalent for bfr96
mmbf4932
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Untitled
Abstract: No abstract text available
Text: 6 0 V v U - X 717-MOSFET 60V SERIES POWER MOSFET O U T L IN E DIM ENSIO NS 2SJ365 F2E6P - 6 0 v -2a • æ fë ü RATINGS ■ A bsolute Maximum R atin gs m s m Item ^ Storage Temperature -V ^ Channel Temperature K u -f > • v - x f E Drain-Source Voltage
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717-MOSFET
2SJ365
-10gn
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IT1701
Abstract: 2N4351 3N172 3N163 3N164 3N170 3N171 IT1750 M116 M117
Text: I HA R R I S S E M I C O N D S E C T O R 27E D T SeS i; O 4302 27 1 QD157G1 0 BBHAS g • T r'O l" 0 I T -Z -7-Z 5 Switching/Am plifier Transistors M O S F E T s — N -C h a n n e l PART NUMBER PACKAGE VGS TH I V Max Min BVds S V Min •dss pA Max •gss
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43G2E71
2N4351
3N170
3N171
IT1750
3N164
3N172
3N173
-10nA
IT1700
IT1701
3N163
M116
M117
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2SK2770-01
Abstract: SC-65 T151
Text: S P E C I F I C A T I O N DEVICE NAME : TYPE NAME : P o w e r MOSFET 2 SK 2 7 T 0-0 1 SPEC. No. Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric C o jid . CHECKED DWG.N0. DRAWN \/ /n |—
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0257-R-004a
2SK2770-0
2SK2770-01
SC-65
T151
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BF966S
Abstract: transistor BG 23
Text: 7 1 1 DÖ2 b 0 0 1 3 7 5 4 2 b l 3 M PHIN BF966S SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected, intended fo r u.h.f. applications in television tuners and professional communication equipment.
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711002b
BF966S
7Z80878
0Db754fci
BF966S
transistor BG 23
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L291N
Abstract: No abstract text available
Text: J. S P E C I F I C A T I O N DEVICE NAME : TYPE NAME : P ow e r M Q S F E T 2 S K 2 6 4 6— 0 1 SPEC. No. F u j i This S p e c ific a tio n DATE NAME APPROVED DRAWN E l e c t r i c Co., Ltd. is su b ject to change without notice. Fuji Electric Co4±cL CHECKE!
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2SK2646-01
0257-R-004a
TQ-220
L291N
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Untitled
Abstract: No abstract text available
Text: ISO -9001 CERTIFIED BY DESC HIGH POWER DUAL OPERATIONAL AMPLIFIER M .S .K E N N E D Y CO RP. 8170 Thompson Road Cicero, N.Y. 13039 315 699-9201 FEATURES: • • • • • • • • 101 Operates In Class AB Or Class C Mode Low Cost High Voltage Operation : 150V
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MIL-PRF-38534
MSK101
MSK101B
Military-Mil-PRF-38534
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD - 9.1708 International l R Rectifier dv/dt RATED HEXFET TRANSISTOR IRHNA7Z60 IRHNA8Z60 R E P E TIT IV E AVALAN C HE A ND N -C H A N N E L MEGA RAD HARD 30 Volt, 0.009a, MEGA RAD HARD HEXFET International R ectifier's RAD HARD technology
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IRHNA7Z60
IRHNA8Z60
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a39 zener diode
Abstract: No abstract text available
Text: MOTORCLA SC IME D I b3b?2S4 00^031? 2 | XSTRS/R F 7 ~ -3 7 - / 3 MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA MTP25IM06E Designer's Data Sheet TM OS IV Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced " E " series of TM O S power M O SFET s is designed to withstand high
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MTP25IM06E
a39 zener diode
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7652Z
Abstract: internal circuit diagram of IC 741 LM741 thermoelectric peltier
Text: WTELEDYNE COMPONENTS TC7652* LOW NOISE, CHOPPER-STABILIZED OPERATIONAL AMPLIFIER FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ ■ The TC7652 low noise, chopper-stabilized operational amplifier improves noise performance and provides a wider common-mode input voltage range. It offers low-input off
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TC7652*
TC7652
TC7652
TC7652_
7652Z
internal circuit diagram of IC 741
LM741
thermoelectric peltier
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Untitled
Abstract: No abstract text available
Text: ISO 9001 CERTIFIED 42 AMP, 200 VOLT 3 PHASE BRIDGE SMART POWER HYBRID IVI.S.KENNEDY CORP. 4320 8 1 7 0 Thom pson Road Cicero, N.Y. 1 3 0 3 9 3 1 5 6 9 9 -9 2 0 1 PRELIMINARY FEATURES: • • • • • • • 2 0 0 V , 4 2 A m p Capability Ultra Low Therm al Resistance - Junction to Case - 0 .3 °C A V
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MlL-STD-1772
MSK4320
SK4320B
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS UC1875/6/7/8 UC2875/6/7/8 UC3875/6/7/8 UNITRODE Phase Shift Resonant Controller FEATURES DESCRIPTION « Zero to 100% Duty Cycle Control The UC1875 family of integrated circuits implements control of a bridge power stage by phase-shifting the
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UC1875/6/7/8
UC2875/6/7/8
UC3875/6/7/8
UC1875
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Untitled
Abstract: No abstract text available
Text: MAXI M I N T E G R A T E D P R O D U C T S 41E D • S Ô 7 b b S l 0 G 0 4 G S 4 S ■ MXM > w > j x i y w High Voltage, Fault-Protected Analog Multiplexers Maxim’s MAX378 is an 8 channel single-ended 1 of 8 multiplexer with fault protection, and the MAX379 is a
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MAX378
MAX379
MAX379MLP*
AX379C/D*
MAX379
835mm)
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IRF3103
Abstract: ap amp mosfet 200 rms
Text: UCC1588/-1 UCC2588/-1 UCC3588/-1 UNITRODE ADVANCE INFORMATION 5-Bit Programmable Output BiCMOS Power Supply Controller FEATURES DESCRIPTION • 5-Bit Digital-to-Analog Converter DAC supports Intel Pentium II The UCC1588 synchronous step-down (Buck) regulator provides accurate
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UCC1588/-1
UCC2588/-1
UCC3588/-1
800kHz
UCC1588
IRF3103
ap amp mosfet 200 rms
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Untitled
Abstract: No abstract text available
Text: M M O TO R O LA — MC34262 MC33262 Advance Information Power Factor Controllers The MC34262/MC33262 are active power factor controllers specifically designed for use as a preconverter in electronic ballast and in off-line power converter applications. These integrated circuits feature an internal startup
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MC34262
MC33262
MC34262/MC33262
MC34262
b3b7253
cl72b5
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mbrs0530l
Abstract: LTC15 three pin 1504A
Text: r r im m _ LTC15 0 4 A TECHNOLOGY 5 0 0 m A L o w V o lt a g e S te p -D o w n S y n c h ro n o u s S w itc h in g R e g u la to r F€flTUR€S D C S C R IP TIO n • 500mA Output Current at 3 .3 V Output ■ Up to 92% Peak Efficiency ■ 10 0 % Maximum Duty Cycle
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LTC15
500mA
LTC1504A
500kHz
10jaA
1504afLT/TP
mbrs0530l
three pin 1504A
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI H Y 5 2 1 6 2 5 7 256K x S e r ie s 16-bit Video RAM with 2WE Introduction Overview The 4megabit Video RAM is an application specific memory device designed for graphics applications. It comprises a 256k x16 DRAM memory array interfaced to a 256 x16 Serial Access Memory SAM , or register.
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16-bit
16bits
1VC02-00-MAY95
HY5216257
525mil
64pin
4b750flfl
1VC02-00-MAY9S
HY5216256GE
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j2y transistor
Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi conductor is correct for your application, this brochure outlines maximum ratings,
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O220AB
O-126
j2y transistor
T15J10
MP4704
MG100M2CK1
2sb834
MP3103
MG50J6ES91
MP3002
mp4505
2sc497
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MMBF112L
Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty
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06050L
MMBD914L
BAS16L
BAL99L
MBAV70L
MBAV99L
MBAV74
BD2835XL
MBD2836XL
MMBD2837XL
MMBF112L
MFE521
MMBF112
2N3797 equivalent
MFE131 equivalent
MPS5210
BC557 SOT23
8C448
BC459C
mfe211
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W1P 59 transistor
Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors
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197/197X
S310N
W1P 59 transistor
W1p 48 TRANSISTOR
transistor w1P 83
ICM AP 1703
transistor SMD marked RNW
transistor BD139 PH 71
W1P 66 transistor
transistor w1P 91
Pnp transistor smd ba rn
w1p npn
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BGY41
Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.
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LCD01
BGY41
BFW10 FET transistor
CQY58
germanium
RX101
equivalent components FET BFW10
bd643
bf199
283 to92 600a transistor
zener phc
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