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    Untitled

    Abstract: No abstract text available
    Text: I N AUER PHILIPS/DISCRETE bb53*131 □ 02*1732 T13 BLY92C b*!E D IAPX A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­


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    PDF BLY92C

    bly87c

    Abstract: transistor tt 2222 yl 1060
    Text: N AMER PHILIPS/DISCRETE bTE D • ttS3T31 ODSTbbb 415 H A P X BLY87C Jl V.H.F. POWER TRANSISTOR N-P-N silico n planar e pitaxial tra nsistor intended fo r use in class-A, B and C operated m obile, h.f. and v.h.f. transm itters w ith a nom inal su p p ly voltage o f 13,5 V . T h e tra nsistor is resistance sta bilize d and


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    PDF bb53S31 BLY87C 7Z77729 7Z77730 bly87c transistor tt 2222 yl 1060

    RIL3N

    Abstract: transistor 1107 transistor tt 2222 W045 TT 2222 BLY91C j0718 RF POWER TRANSISTOR NPN vhf transistor L6
    Text: b SE 711002b D DDb3bll Sbl • PHIN BLY91C PHILIPS INTERNATIONAL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­


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    PDF 711002b 00b3bll BLY91C OT-120. RIL3N transistor 1107 transistor tt 2222 W045 TT 2222 BLY91C j0718 RF POWER TRANSISTOR NPN vhf transistor L6

    transistor tt 2222

    Abstract: BLV20 TT 2222 RF POWER TRANSISTOR NPN vhf j0718 2222 123 capacitor philips ic TT 2222
    Text: PHILIPS INTERNATIONAL b5E J> m 711Gö5b CIQb2ü30 O^ä BLV20 V.H.F. PO W ER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­


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    PDF BLV20 OT-123. 711002b 7z68947 7z68946 7z68948 transistor tt 2222 BLV20 TT 2222 RF POWER TRANSISTOR NPN vhf j0718 2222 123 capacitor philips ic TT 2222

    10J2

    Abstract: 3LV2 BLV20 TRANSISTOR 2X5 sot
    Text: •i bb53T31 0025^33 624 H A P X BLV20 b'ìE T> N AMER PH I L I P S /D IS C RE T E V.H.F. POWER TRANSISTOR N -P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h.f. and v.h.f. transmitters with a nom inal sup p ly voltage of 2 8 V . Th e transistor is resistance stabilized and is guaran­


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    PDF bb53T31 BLV20 OT-123. 7Z68947 7z68946 7Z68948 10J2 3LV2 BLV20 TRANSISTOR 2X5 sot

    BLV21

    Abstract: transistor L6 Sss-5 2222 123 capacitor philips B20-4
    Text: PHILIPS INTERNATIONAL bSE ]> m 7110fl2b 0GbSfl3ñ 3ÔT « P H I N BLV21 Jl V.H.F. POW ER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in cfass-A, B and C operated h.f. and v.h.f. transmitters w ith a nominal supply voltage o f 28 V . The transistor is resistance stabilized and is guaran­


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    PDF 711002b BLV21 OT-123. 7Z68949 BLV21 transistor L6 Sss-5 2222 123 capacitor philips B20-4

    BLV10

    Abstract: RF POWER TRANSISTOR NPN vhf
    Text: N AMER PHILIPS/DISCRETE bRE D • bb53^3L OOEB'iOl E m IAPX BLV10 V.H.F. POWER TRANSISTOR N-P-N silico n planar e p ita xia l tra n sisto r intended fo r use in ciass-A, B and C operated m ob ile, h .f. and v.h.f. tran sm itte rs w ith a nom inal supply voltage o f 13,5 V . T he tran sisto r is resistance stabilized and


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    PDF BLV10 76-j16 7Z78515 BLV10 RF POWER TRANSISTOR NPN vhf

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE bSE 1> • bb53S31 002clbbb 41S HIAPX I BLY87C A _ V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and


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    PDF bb53S31 BLY87C Q0ETb73

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b'lE ]> bbS3cl31 DOETfciflM 430 BLY88C APX V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is


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    PDF BLY88C bb53T31

    BLV11

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bbsa^ai □QañiD'i sqs BLV11 b^E IAPX JL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is


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    PDF OT-123. BLV11