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    bd950

    Abstract: 80954 b0952 B0950 BD949 BD954 USA060-1
    Text: BD950; 952 BD954; 956 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic T 0 -2 2 0 envelope. W ith the ir n-p-n complements BD949; 951; 953 and 955 they are intended fo r use in a wide range o f power amplifiers and fo r switching applications.


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    BD950; BD954; T0-220 BD949; BD950J O-22cturer BD950 Z82145 7Z82142 80954 b0952 B0950 BD949 BD954 USA060-1 PDF