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    80 V NPN EPITAXIAL SILICON TRANSISTOR Search Results

    80 V NPN EPITAXIAL SILICON TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    80 V NPN EPITAXIAL SILICON TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BD439

    Abstract: BD441 60V transistor npn 2a transistor BD441 60V transistor npn 2a switching applications BD440 BD442
    Text: BD439/441 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD440, BD442 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Symbol : BD439 Rating Unit 60 V 80 V 60 V 80 V 60 V


    Original     		PDF BD439/441 O-126 BD440, BD442 BD439 BD441 BD439 BD441 60V transistor npn 2a transistor BD441 60V transistor npn 2a switching applications BD440

    MMBTA06LT1

    Abstract: mbta06
    Text: MBTA06LT1 NPN EPITAXIAL SILICON TRANSISTOR * High Collector-Emitter Voltage:Vcbo=80V * Collector Current: Ic=500mA * Collector Dissipation: Pc=225mW Ta=25 1. ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating Unit Vcbo 80 V Collector-Emitter Voltage Vceo 80 V Emitter-Base Voltage


    Original     		PDF MBTA06LT1 500mA 225mW 100mA 100mA 100MHz 062in MMBTA06LT1 300uS mbta06

    MMBTA06

    Abstract: No abstract text available
    Text: MMBTA06 NPN Silicon Epitaxial Planar Small Signal Transistor for Switching and amplifier applications SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Collector Emitter Voltage VCEO 80 V Collector Base Voltage VCBO 80 V Emitter Base Voltage


    Original     		PDF MMBTA06 OT-23 100mA, 100MHz MMBTA06

    MMBTA06LT1

    Abstract: mbta06
    Text: MBTA06LT1 NPN EPITAXIAL SILICON TRANSISTOR * High Collector-Emitter Voltage:Vcbo=80V * Collector Current: Ic=500mA * Collector Dissipation: Pc=225mW Ta=25 1. ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating Unit Vcbo 80 V Collector-Emitter Voltage Vceo 80 V Emitter-Base Voltage


    Original     		PDF MBTA06LT1 500mA 225mW 100mA 100mA 100MHz 062in 300uS MMBTA06LT1 mbta06

    MMBTA06

    Abstract: No abstract text available
    Text: MMBTA06 NPN Silicon Epitaxial Planar Small Signal Transistor for Switching and amplifier applications SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Collector Emitter Voltage VCEO 80 V Collector Base Voltage VCBO 80 V Emitter Base Voltage


    Original     		PDF MMBTA06 OT-23 100mA, 100MHz MMBTA06

    KST05

    Abstract: KSP05 KST06
    Text: KST05/06 NPN EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 Î ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Symbol Rating Unit 60 80 V V VEBO IC PC T STG 60 80 4 500 350 150 V V V mA mW RTH(j-a) 357 VCBO Collector Base Voltage :KST05 :KST06 Collector-Emitter Voltage


    Original     		PDF KST05/06 OT-23 KST05 KST06 KSP05 KST05 KST06

    NPN Transistor VCEO 80V 100V

    Abstract: KSE182 NPN Transistor VCEO 80V 100V hfe 100 KSE180 KSE181 80 V NPN epitaxial silicon transistor NPN Transistor VCEO 80V 100V DC Current gain 100 transistor 182 kse18
    Text: KSE180/181/182 NPN EPITAXIAL SILICON TRANSISTOR DESIGNED FOR LOW POWER AUDIO AMPLIFIER AND LOW CURRENT HIGH SPEED SWITCHING APPLICATIONS TO-126 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit 60 V : KSE181 80 V : KSE182 100 V : KSE180 40 V : KSE181


    Original     		PDF KSE180/181/182 O-126 KSE181 KSE182 KSE180 100mA 500mA NPN Transistor VCEO 80V 100V KSE182 NPN Transistor VCEO 80V 100V hfe 100 KSE180 KSE181 80 V NPN epitaxial silicon transistor NPN Transistor VCEO 80V 100V DC Current gain 100 transistor 182 kse18

    PN3567

    Abstract: No abstract text available
    Text: PN3567 NPN SILICON TRANSISTOR DESCRIPTION PN3567 is NPN silicon planar epitaxial transistor designed for amplifier and switching applications. TO-92 EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage V cbo 80 V Collector-Emitter Voltage V ceo 60 V Emitter-Base Voltage


    OCR Scan     		PDF PN3567 500mA 600mW 100jiA 120AX 150mA 300nS,

    Untitled

    Abstract: No abstract text available
    Text: BD439/441 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD440, BD442 respectively ABSOLUTE MAXIMUM RATINGS Characteristic C ollector Base Voltage Sym bol BD439 Rating Unit 60 V 80 V 60 V 80 V 60 V 80 V


    OCR Scan     		PDF BD439/441 BD440, BD442 BD439 BD441

    Untitled

    Abstract: No abstract text available
    Text: KSD1408 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • Complement to KSB1017 TO-220F ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage C haracteristic V cB O Symbol 80 V Collector Emitter Voltage V cE O 80 V Emitter Base Voltage


    OCR Scan     		PDF KSD1408 KSB1017 O-220F

    Untitled

    Abstract: No abstract text available
    Text: KSD526 NPN EPITAXIAL SILICON TRANSISTOR POW ER AMPLIFIER APPLICATIONS • Complement to KSB596 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Vottage Collector-Emitter Voltage VcBO 80 VcEO 80 V V Emitter-Base Voltage Collector Current


    OCR Scan     		PDF KSD526 KSB596

    GE003

    Abstract: No abstract text available
    Text: KSD526 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • Complement to KSB596 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage C haracteristic VcBO Symbol 80 V Collector-Emitter Voltage V ceo 80 V Emitter-Base Voltage V ebo 5 V Collector Current


    OCR Scan     		PDF KSD526 KSB596 GE003

    bd177

    Abstract: BD175
    Text: BD175/177/179 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD 176/178/180 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit 45 V BD177 60 V BD179 80 V 45 V BD177 60 V BD179 80 V BD175


    OCR Scan     		PDF BD175/177/179 BD175 BD177 BD179

    Untitled

    Abstract: No abstract text available
    Text: KSD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 136 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit 45 V : BD137 60 V : BD139 80 V 45 V : BD137 60 V : BD139 80


    OCR Scan     		PDF KSD135/137/139 BD140 BD137 BD139 BD135 BD137,

    BD transistor

    Abstract: BD NPN transistors BD175 transistor bd 126 BD 175 transistor transistor BD
    Text: BD175/177/179 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 176/178/180 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol Rating Unit 45 V BD177 60 V BD179 80 V 45 V BD177 60 V BD179 80


    OCR Scan     		PDF BD175/177/179 100mA, 150mA 250mA 300ns, BD transistor BD NPN transistors BD175 transistor bd 126 BD 175 transistor transistor BD

    LB 122 transistor

    Abstract: LB 122 NPN TRANSISTOR
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 20/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS TO -220 • Complement to TIPI25/126/127 ABSOLUTE MAXIMUM RATINGS Ta = 25°C Characteristic Rating Unit V CBO 60 80 100 V V V V cE O 60 80 100 5 5 8 120


    OCR Scan     		PDF TIPI25/126/127 TIP120 TIP121 TIP122 LB 122 transistor LB 122 NPN TRANSISTOR

    bd177

    Abstract: transistor bd177 BD175
    Text: BD175/177/179 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO -126 • Complement to BD176/178/180 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit 45 60 80 45 60 80 5 3 7 30 150 -6 5 ^ 1 5 0 V V V V V V V


    OCR Scan     		PDF BD175/177/179 BD176/178/180 BD175 BD177 BD179 BD175 BD177 transistor bd177

    KSD526

    Abstract: KSB596
    Text: NPN EPITAXIAL SILICON TRANSISTOR KSD526 POW ER AMPLIFIER A PPLICATIO NS • Com plem ent to KSB596 A BSOLUTE M AXIMUM RATINGS Characteristic Symbol Rating Unit Col lector-Base Voltage V cB O 80 V C ollector-Em itter Voltage VcEO 80 V Emitter-Base Voltage V ebo


    OCR Scan     		PDF KSD526 KSB596 KSD526 KSB596

    KSB1017

    Abstract: KSD1408
    Text: KSD1408 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • C om plem ent to KSB1017 TO-22QF ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector Base Voltage Characteristic V c bO Sym bol 80 V C ollecto r E m itter Voltage V cE O 80 V Em itter Base Voltage


    OCR Scan     		PDF KSD1408 KSB1017 O-220F KSB1017

    1g marking

    Abstract: No abstract text available
    Text: KST05/06 NPN EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol Collector Base Voltage Rating Unit 60 80 V V 60 80 4 500 350 150 V V V mA mW °C 357 °C/W V cB O : KST05 : KST06 Collector-Emitter Voltage


    OCR Scan     		PDF KST05/06 KST05 KST06 KSP05 1g marking

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KSD1408 POWER AMPLIFIER APPLICATIONS • C om plem ent to KSB1017 TO-22QF ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol Rating Unit C ollecto r Base Voltage V cbO 80 V C ollecto r E m itter Voltage V cE O 80 V E m itter Base Voltage


    OCR Scan     		PDF KSD1408 KSB1017 O-22QF

    Untitled

    Abstract: No abstract text available
    Text: KSD1944 NPN EPITAXIAL SILICON TRANSISTOR HIGHp POWER TRANSISTOR TO-22QF ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage Characteristic VcBQ Symbol 80 V Collector Emitter Voltage VcEO 60 V Emitter Base Voltage V ebo 8 V Collector Current lc 3 A


    OCR Scan     		PDF KSD1944 O-22QF

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST05/06 DRIVER TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Symbol C ollector Base Voltage Rating Unit 60 80 V V 60 80 4 500 350 150 V V V mA mW °C 357 °C /W V cbO : KST05 : KST06 C ollector-E m ltter Voltage


    OCR Scan     		PDF KST05/06 KST05 KST06 KSP05

    BD243

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR BD243/A/B/C MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD244, BD244A, BD244B and BD244C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit 45 V : BD243A 60 V : BD243B 80 V : BD243C


    OCR Scan     		PDF BD243/A/B/C BD244, BD244A, BD244B BD244C BD243A BD243B BD243C BD243