bussmann semiconductor fuse
Abstract: bussmann semiconductor fuse FWX FWX-500A transistor a 1413 FWX-200A FWX-35A FWX-60A bussmann fwx fuse FWX-350A
Text: BIF Document Semiconductor Fuse 35-800A, 250 Volts 359 Size 104 103 FWX-200A FWX-350A FXW-400A FWX-500A FWX-600A FWX-800A Virtual Pre-arcing Time In Seconds 102 101 100 FWX-35A FWX-40A FWX-60A FWX-70A FWX-100A FWX-150A 10–1 10–2 10–3 10–4 2 Minimum Melting
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Original
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5-800A,
FWX-200A
FWX-350A
FXW-400A
FWX-500A
FWX-600A
FWX-800A
FWX-35A
FWX-40A
FWX-60A
bussmann semiconductor fuse
bussmann semiconductor fuse FWX
FWX-500A
transistor a 1413
FWX-200A
FWX-35A
FWX-60A
bussmann fwx fuse
FWX-350A
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PDF
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Untitled
Abstract: No abstract text available
Text: Coaxial Voltage Controlled Oscillator Wide Band ZX95-800A+ 505 to 800 MHz Features • 0.25-5V tuning voltage range • Low phase noise • Low pulling • Protected by US patent 6,790,049 CASE STYLE: GB956 Applications • R&D • LAB • Instrumentation
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Original
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ZX95-800A+
GB956
ZX95-800A-S+
2002/95/EC)
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PDF
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KBC-300
Abstract: KBC-35 KBC-100 KBC-110 KBC-40 KBC-45 KBC-50 KBC-60 KBC-70 KBC-80
Text: Bussmann KBC 600V † 35-800A ® For new installations, Bussmann recommends the 700 Volt FWP series fuse. The 600V fuses are supplied as replacements only. Ordering Information Type Part Number KBC-35 KBC-45 Dimensions Carton Qty. Carton Weight lbs Figure
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Original
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5-800A
KBC-45
KBC-35
KBC-60
KBC-40
KBC-50
KBC-70
KBC-90
KBC-80
KBC-100
KBC-300
KBC-35
KBC-100
KBC-110
KBC-40
KBC-45
KBC-50
KBC-60
KBC-70
KBC-80
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PDF
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Untitled
Abstract: No abstract text available
Text: Coaxial Voltage Controlled Oscillator Wide Band ZX95-800A+ 505 to 800 MHz Features • 0.25-5V tuning voltage range • low phase noise • low pulling • protected by US patent 6,790,049 CASE STYLE: GB956 Applications •r&d • lab • instrumentation • wireless communications
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Original
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ZX95-800A+
GB956
ZX95-800A-S+
2002/95/EC)
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PDF
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51923
Abstract: No abstract text available
Text: Voltage Controlled Oscillator Typical Performance Data ZX95-800A+ V TUNE FREQUENCY POWER OUTPUT HARMONICS FREQ. FREQ PHASE TUNE SENS MHz/V (MHz) (dBm) (dBc) PUSH (MHz/V) OFFSET (KHz) NOISE (dBc/Hz) 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75
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Original
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ZX95-800A+
51923
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PDF
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FWP-800A
Abstract: FWP-60B FWP-700A FWP-50B FWP-100B FWP-1000A FWP-1200A FWP700
Text: Semiconductor Fuse 35-100A 700-1200A 700 Volts BIF Document 35785308 Size 104 6 4 2 103 6 4 2 FWP-700A FWP-800A FWP-900A FWP-1000A FWP-1200A 102 6 4 Virtual Pre-Arcing Time In Seconds 2 101 6 4 FWP-35B FWP-40B FWP-50B FWP-60B FWP-70B FWP-80B FWP-90B FWP-100B
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Original
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5-100A
00-1200A
FWP-700A
FWP-800A
FWP-900A
FWP-1000A
FWP-1200A
FWP-35B
FWP-40B
FWP-50B
FWP-800A
FWP-60B
FWP-700A
FWP-50B
FWP-100B
FWP-1000A
FWP-1200A
FWP700
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PDF
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FWJ-70A
Abstract: FWJ-1200A FWJ-40A FWJ-800A FWJ-100A FWJ-300A FWJ-50A FWJ-1000A FWJ-1400A FWJ-1800A
Text: BIF Document Semiconductor Fuse 800-2000A 1000 Volts 35785309 Size 104 6 4 2 103 6 4 2 102 Virtual Pre-Arcing Time In Seconds 6 4 FWJ-800A FWJ-1000A FWJ-1200A FWJ-1400A FWJ-1600A FWJ-1800A FWJ-2000A 2 101 6 4 2 100 6 4 2 10–1 6 4 2 10–2 6 4 2 –3 10 6
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Original
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00-2000A
FWJ-800A
FWJ-1000A
FWJ-1200A
FWJ-1400A
FWJ-1600A
FWJ-1800A
FWJ-2000A
SB01191
00A-2000A
FWJ-70A
FWJ-1200A
FWJ-40A
FWJ-800A
FWJ-100A
FWJ-300A
FWJ-50A
FWJ-1000A
FWJ-1400A
FWJ-1800A
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PDF
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FWA-80A
Abstract: DK-2740 FWA-400A bussmann semiconductor fuse dk2740 bussmann LE12 5TH transistor a 1413 FWA-1000A FWA-125A FWA-150A
Text: BIF Document Semiconductor Fuse 70-1000A, 150 Volts 35785310 Size 104 6 4 2 10 3 6 4 FWA-500A FWA-600A FWA-700A FWA-800A FWA-1000A 2 102 6 4 Virtual Pre-Arcing Time In Seconds 2 101 6 4 2 100 6 4 2 10–1 6 4 2 10–2 6 4 FWA-70A FWA-80A FWA-100A FWA-125A
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Original
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0-1000A,
FWA-500A
FWA-600A
FWA-700A
FWA-800A
FWA-1000A
FWA-70A
FWA-80A
FWA-100A
FWA-125A
FWA-80A
DK-2740
FWA-400A
bussmann semiconductor fuse
dk2740
bussmann LE12 5TH
transistor a 1413
FWA-1000A
FWA-125A
FWA-150A
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PDF
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rm3 transistor
Abstract: BUK478
Text: Philips Com ponents Data sheet status Preliminary specification date of issue March 1991 BUK 476-800A/B PowerMOS transistor Replaces BUK446-800A/B PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.
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OCR Scan
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76-800A/B
BUK446-800A/B
7110flSb
-800A
-800B
BUK476
BUK476-800A/B
7110f
rm3 transistor
BUK478
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PDF
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TRANSISTOR 40
Abstract: BUK474-800A
Text: -7 ^ 3 1 Philips Components Data sheet status Preliminary specification date of issue March 1991 - C f f BUK474-800A/B PowerMOS transistor Replaces BUK444-800A/B PHILIPS INTERNATIONAL G EN E R A L DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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OCR Scan
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BUK474-800A/B
BUK444-800A/B
711002b
BUK474
-800A
-800B
T-39-09
BUK474-800A/B
0044b33
TRANSISTOR 40
BUK474-800A
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PDF
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BUK426-800A
Abstract: No abstract text available
Text: Philips Com ponents Data sheet status Product specification BUK426-800A/B PowerMOS transistor date of issue March 1991 PHILIPS INTERNATIONAL SbE D 1_ I GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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OCR Scan
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BUK426-800A/B
BUK426
-800B
T-39-11
7110fl5tj
BUK426-800A
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PDF
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BUK428-800A
Abstract: BUK428-800B transistor cms
Text: Philips Components Data sheet status Prelim inary specification date of issue March 1991 PHILIPS BUK428-800A/B PowerMOS transistor S bE INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.
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OCR Scan
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OT199
BUK428-800A/B
711002b
BUK428
-800A
-800B
BUK428-800A
BUK428-800B
transistor cms
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PDF
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K428
Abstract: BUK428-800B diode K428 BUK428-800A K-428 BUK428
Text: Philips Components Data sheet status Prelim inary specification date of issue March 1991 PHILIPS BUK428-800A/B PowerMOS transistor S bE INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.
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OCR Scan
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OT199
BUK428-800A/B
711002b
BUK428
-800A
-800B
K428
BUK428-800B
diode K428
BUK428-800A
K-428
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PDF
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k426
Abstract: LD 25 V BUK426-800A transistor bu
Text: ' T ~ 3 cî ' - ( Philips Com ponents Data sheet status Product specification date of issue March 1991 BUK426-800A/B PowerMOS transistor c.F n PHILIPS INTERNATIONAL I_ l GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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OCR Scan
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BUK426-800A/B
711005t.
BUK426
-600A
-800B
PINNING-SOT199
k426
LD 25 V
BUK426-800A
transistor bu
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PDF
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SSG50C120
Abstract: No abstract text available
Text: TRIAC SSG50C For general A.C. power control applications such as A.C. switches, light controls, speed controls and heater controls etc. • • • • • General A.C. power use It rms = 50A High voltage up to 1200V High surge current of 800A Package types;stud
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OCR Scan
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SSG50C
SSG50C40
SSG50C60
SSG50C80
SSG50C100
SSG50C120
B-287
b-288
SSG50C120
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PDF
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DIODE B97
Abstract: BUK446-800A BUK446-800A application BUK476 BUK476-800A BUK476-800B 3909
Text: Philips Components Data sheet status Prelim inary specification date of issue M arch 1991 - 3 9 - 0 ? BUK 476-800A/B PowerMOS transistor R e p laces B U K 44 6-8 00 A /B PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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OCR Scan
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BUK446-800A/B
76-800A/B
-SOT186A
7110flSb
DCI44fc
BUK476
-800A
-800B
BUK476-800A/B
7110fi2b
DIODE B97
BUK446-800A
BUK446-800A application
BUK476-800A
BUK476-800B
3909
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PDF
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K638
Abstract: idm 73
Text: Philips Components Data sheet status Prelim inary specification date of issue March 1991 BUK638-800A/B PowerMOS transistor Fast recovery diode FET PHI L IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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OCR Scan
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BUK638-800A/B
711Gfl2b
BUKS38
-800A
K638-800A/B
K638
idm 73
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PDF
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BUK474
Abstract: BUK474-800A BUK474-800B 3909
Text: Philips Components Data sheet status Prelim inary specification date of issue March 1991 - 7 ^ 3 9 -— C f? BUK474-800A/B PowerMOS transistor Replaces B U K 4 4 4 -8 0 0 A /B PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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OCR Scan
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BUK444-800A/B
PINNING-SOT186A
BUK474-800A/B
711002b
BUK474
-800A
-800B
BUK474-800A
BUK474-800B
3909
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PDF
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Untitled
Abstract: No abstract text available
Text: T -3 9 -V Philips Components Data sheet status Prelim inary specification date of issue March 1991 BUK428-800A/B PowerMOS transistor SbE D PHI L IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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OCR Scan
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BUK428-800A/B
BUK428
-800A
-800B
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PDF
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100-P
Abstract: BUK446 BUK446-800A BUK446-800B transistor SE 431 ha 431 transistor
Text: PHI LI P S I N T E R N A T I O N A L bSE D Kl 7 1 1 0 Ô S b Ü O b M Ol b E4S H P H I N Philips Semiconductors Product Specification BUK446-800A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.
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OCR Scan
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711002b
BUK446-800A/B
-SOT186
BUK446
-800A
-800B
7110a2b
100-P
BUK446-800A
BUK446-800B
transistor SE 431
ha 431 transistor
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PDF
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pj 66 diode
Abstract: 100-P BUK438-800A BUK438-800B
Text: PHILIPS INTERNATIONAL ¡□SE ]> 711002b 3fi4 H P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode fìeld-effect power transistor in a plastic envelope. The device is intended for use in
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OCR Scan
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7110fl2b
BUK438-800A/B
BUK438
-800A
-800B
pj 66 diode
100-P
BUK438-800A
BUK438-800B
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PDF
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bsh 13 - n1
Abstract: BUK436-800A BUK436-800B
Text: PHILIPS INT ERNATIONAL bSE D B 711062b 0Db3T0b b47 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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OCR Scan
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711062b
BUK436-800A/B
BUK436
-800A
-800B
bsh 13 - n1
BUK436-800A
BUK436-800B
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PDF
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BUK436-800A
Abstract: BUK436-800B
Text: PHILIPS INT ERNATIONAL bSE D B 711062b 0Db3T0b b47 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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OCR Scan
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711062b
BUK436-800A/B
BUK436
-800A
-800B
BUK436-800A
BUK436-800B
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PDF
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diode RP 6040
Abstract: 1N111 BUK436-800A BUK436-800B bsh 13 - n1 RFT Semiconductors
Text: PHILIPS INT ERNATIONAL bSE D B 711062b 0Db3T0b b47 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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OCR Scan
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711062b
BUK436-800A/B
BUK436
-800A
-800B
7110A2fci
diode RP 6040
1N111
BUK436-800A
BUK436-800B
bsh 13 - n1
RFT Semiconductors
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PDF
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